APTGF50A120T3WG Phase leg NPT IGBT Power Module 25 26 27 28 31 Application • Welding converters Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 4 3 13 14 NTC 15 16 8 7 18 19 28 27 26 25 20 22 32 29 16 30 15 31 14 32 13 2 3 4 7 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS compliant 20 19 18 23 22 8 VCES = 1200V IC = 50A @ Tc = 80°C 10 11 12 Pins 25/26/27/28 must be shorted together Pins 13/14/15/16 must be shorted together Pins 18/19/20/22 must be shorted together Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 70 50 150 ±20 312 100A @ 1200V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGF50A120T3WG – Rev 0 May, 2009 Absolute maximum ratings APTGF50A120T3WG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V Tj = 25°C VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 3.2 4.0 4.5 Max 250 500 3.7 Unit 6.5 100 V nA Max Unit µA V Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time VGS = 15V VBus = 600V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 5 Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C RG = 5 Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Typ 3450 330 220 330 35 200 35 pF nC 65 ns 320 30 35 65 ns 360 40 6.9 mJ 3.05 300 A Reverse diode ratings and characteristics IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min 1200 Tj = 25°C Tj = 125°C IF = 30A VR = 800V di/dt =200A/µs www.microsemi.com Max 100 500 Tj = 125°C 30 2.6 3.2 1.8 Tj = 25°C 300 Tj = 125°C 380 Tj = 25°C 360 Tj = 125°C 1700 Tc = 80°C IF = 30A IF = 60A IF = 30A Typ Unit V µA A 3.1 V ns nC 2-7 APTGF50A120T3WG – Rev 0 May, 2009 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGF50A120T3WG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.4 1.2 Unit °C/W V 150 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ T T ⎝ 25 ⎠⎦ ⎣ 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-7 APTGF50A120T3WG – Rev 0 May, 2009 SP3 Package outline (dimensions in mm) APTGF50A120T3WG Typical IGBT Performance Curve Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 120 TJ=25°C TJ=125°C 80 40 30 TJ=25°C 20 TJ=125°C 10 2 4 6 VCE, Collector to Emitter Voltage (V) 0 8 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge 250µs Pulse Test < 0.5% Duty cycle 200 VGE, Gate to Emitter Voltage (V) Transfer Characteristics 250 TJ=25°C 150 100 TJ=125°C 50 TJ=25°C 0 0 4 4 8 12 VGE, Gate to Emitter Voltage (V) 18 VCE=240V IC = 50A TJ = 25°C 16 14 VCE=600V 12 10 VCE=960V 8 6 4 2 0 0 16 50 100 150 200 250 300 350 Gate Charge (nC) Breakdown Voltage vs Junction Temp. 70 Ic, DC Collector Current (A) 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 DC Collector Current vs Case Temperature 60 50 40 30 20 10 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4-7 APTGF50A120T3WG – Rev 0 May, 2009 0 Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle 0 0 Collector to Emitter Breakdown Voltage (Normalized) Output Characteristics (VGE=10V) 40 Ic, Collector Current (A) Ic, Collector Current (A) 160 APTGF50A120T3WG Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 45 VCE = 600V RG = 5Ω 40 VGE = 15V 35 30 25 0 25 50 75 100 400 VGE=15V, TJ=125°C 350 300 VGE=15V, TJ=25°C 250 VCE = 600V RG = 5Ω 200 125 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 50 75 100 125 Current Fall Time vs Collector Current 50 180 VCE = 600V RG = 5Ω 140 tf, Fall Time (ns) tr, Rise Time (ns) 25 ICE, Collector to Emitter Current (A) 100 VGE=15V 60 TJ = 125°C 40 30 TJ = 25°C VCE = 600V, VGE = 15V, RG = 5Ω 20 20 125 VCE = 600V RG = 5Ω 24 TJ=125°C, VGE=15V 20 16 12 TJ=25°C, VGE=15V 8 4 0 25 50 75 100 ICE, Collector to Emitter Current (A) 12 Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A 0 TJ = 125°C 4 TJ = 25°C 2 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125 Switching Energy Losses vs Junction Temp. 8 Switching Energy Losses (mJ) 14 VCE = 600V VGE = 15V RG = 5Ω 6 0 Switching Energy Losses vs Gate Resistance 18 16 125 8 125 VCE = 600V VGE = 15V TJ= 125°C 25 50 75 100 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 28 0 Switching Energy Losses (mJ) 0 VCE = 600V VGE = 15V RG = 5Ω 6 Eon, 50A 4 Eoff, 50A Eon, 25A 2 Eoff, 25A 0 0 10 20 30 40 Gate Resistance (Ohms) 50 www.microsemi.com 25 50 75 100 TJ, Junction Temperature (°C) 125 5-7 APTGF50A120T3WG – Rev 0 May, 2009 25 50 75 100 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 0 APTGF50A120T3WG IC, Collector Current (A) Cies 1000 Coes 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 80 60 40 20 0 50 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 0.4 100 Cres 100 0.9 0.35 0.3 0.25 0.7 0.5 0.2 0.3 0.15 0.1 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 120 100 80 ZVS 60 ZCS 40 20 Hard switching 0 10 www.microsemi.com VCE = 600V D = 50% RG = 5Ω TJ = 125°C TC= 75°C 20 30 40 50 IC, Collector Current (A) 60 6-7 APTGF50A120T3WG – Rev 0 May, 2009 Thermal Impedance (°C/W) Reverse Bias Safe Operating Area 120 Fmax, Operating Frequency (kHz) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 APTGF50A120T3WG Typical diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge trr, Reverse Recovery Time (ns) TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 3.0 500 TJ=125°C VR=800V 400 300 45 A 200 30 A 15 A 100 0 0 4.0 200 TJ=125°C VR=800V 30 A 2 15 A 1 0 200 400 600 800 -diF/dt (A/µs) 1000 1200 800 1000 1200 30 30 A TJ=125°C VR=800V 25 15 A 20 45 A 15 10 5 0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 200 Max. Average Forward Current vs. Case Temp. 50 160 Duty Cycle = 0.5 TJ=175°C 40 IF(AV) (A) C, Capacitance (pF) 45 A 3 0 600 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 4 400 -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 120 80 30 20 10 40 0 0 1 10 100 VR, Reverse Voltage (V) 1000 25 50 75 100 125 150 175 Case Temperature (ºC) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTGF50A120T3WG – Rev 0 May, 2009 IF, Forward Current (A) 80