APTGF350SK60G Buck chopper NPT IGBT Power Module VCES = 600V IC = 350A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies VBUS Q1 G1 OUT CR2 0/VBUS G1 VBUS 0/VBUS Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant OUT E1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 600 430 350 1225 ±20 1562 Tj = 150°C 800A @ 600V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF350SK60G – Rev 2 July, 2006 E1 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration APTGF350SK60G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 3 Typ 17.2 1.88 1.6 1320 1160 800 26 25 150 Max 200 1750 2.5 Unit 5 ±300 V nA Max Unit nC ns 26 25 170 ns 40 17.2 mJ 14 Typ Max IF = 400A IF = 800A IF = 400A IF = 400A VR = 400V di/dt =800A/µs www.microsemi.com Unit V Tj = 25°C Tj = 125°C Tc = 80°C V nF 600 VR=600V µA 30 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 2.0 2.2 Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 360A R G = 1.25Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 360A R G = 1.25Ω VGE = 15V Tj = 125°C VBus = 400V IC = 360A Tj = 125°C R G = 1.25Ω Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Min VGE = 15V VBus = 300V IC = 360A Fall Time Tf Test Conditions Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C T VGE =15V j = 25°C IC = 360A Tj = 125°C VGE = VCE, IC = 4mA VGE = ±20V, VCE = 0V 750 1500 Tj = 125°C 400 1.6 1.9 1.4 Tj = 25°C 180 Tj = 125°C Tj = 25°C 220 1560 Tj = 125°C 5800 µA A 1.8 V ns nC 2-6 APTGF350SK60G – Rev 2 July, 2006 Symbol Characteristic APTGF350SK60G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.08 0.16 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF350SK60G – Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTGF350SK60G Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 1200 250µs Pulse Test < 0.5% Duty cycle 1000 TJ=-55°C Ic, Collector Current (A) TJ=25°C 250µs Pulse Test < 0.5% Duty cycle 1000 800 600 TJ=125°C 400 200 0 800 TJ=25°C 600 400 TJ=125°C 200 0 0 1 2 3 4 0 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle 1000 800 600 400 TJ=125°C 200 TJ=-55°C TJ=25°C 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 6 Ic=720A 5 4 3 Ic=360A 2 1 Ic=180A 0 6 8 10 12 14 V CE=120V IC = 360A TJ = 25°C 16 14 V CE=300V 12 10 VCE=480V 8 6 4 2 0 0 200 400 600 800 1000 1200 1400 Gate Charge (nC) 8 7 18 10 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) 0 4 Gate Charge 1200 16 On state Voltage vs Junction Temperature 4 3.5 Ic=720A 3 2.5 Ic=360A 2 1.5 Ic=180A 1 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 0.5 0 -50 VGE, Gate to Emitter Voltage (V) -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 500 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) TJ=-55°C 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 400 300 200 100 0 0 25 50 75 100 125 150 TC , Case Temperature (°C) 4-6 APTGF350SK60G – Rev 2 July, 2006 Ic, Collector Current (A) 1200 APTGF350SK60G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 30 VGE = 15V 25 Tj = 25°C VCE = 400V RG = 1.25Ω 20 15 100 200 300 400 500 600 250 VGE=15V, TJ=125°C 200 150 100 50 100 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 300 400 500 600 Current Fall Time vs Collector Current 80 VCE = 400V RG = 1.25Ω tf, Fall Time (ns) tr, Rise Time (ns) 200 ICE, Collector to Emitter Current (A) 80 60 VGE=15V, T J=25°C VCE = 400V RG = 1.25Ω VGE =15V, TJ=125°C 40 20 60 TJ = 125°C 40 TJ = 25°C 20 VCE = 400V, VGE = 15V, RG = 1.25Ω 0 100 0 200 300 400 500 ICE, Collector to Emitter Current (A) 600 Eoff, Turn-off Energy Loss (mJ) Turn-On Energy Loss vs Collector Current Eon, Turn-On Energy Loss (mJ) 32 VCE = 400V R G = 1.25Ω 24 TJ=125°C, VGE=15V 16 TJ=25°C, VGE=15V 8 0 100 200 300 400 500 600 24 VCE = 400V VGE = 15V RG = 1.25Ω 20 16 12 TJ = 25°C 8 4 0 100 Eoff, 720A Eon, 360A Eoff, 180A 16 Eon, 180A 0 0 2 4 6 8 10 Gate Resistance (Ohms) 200 300 400 500 600 12 www.microsemi.com Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ) Switching Energy Losses (mJ) Eon, 720A Eoff, 360A 32 TJ = 125°C ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 64 48 600 Turn-Off Energy Loss vs Collector Current ICE, Collector to Emitter Current (A) VCE = 400V VGE = 15V TJ= 125°C 200 300 400 500 ICE, Collector to Emitter Current (A) 40 V CE = 400V VGE = 15V RG = 1.25Ω 32 Eon, 720A Eoff, 720A 24 Eon, 360A 16 Eoff, 360A 8 Eon, 180A Eoff, 180A 0 0 25 50 75 100 125 TJ, Junction Temperature (°C) 5-6 APTGF350SK60G – Rev 2 July, 2006 100 APTGF350SK60G Capacitance vs Collector to Emitter Voltage Reverse Bias Safe Operating Area 900 IC , Collector Current (A) C, Capacitance (pF) 100000 Cies 10000 Coes 1000 Cres 100 800 700 600 500 400 300 200 100 0 0 10 20 30 40 0 50 200 400 600 800 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.09 0.08 0.9 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.7 0.5 0.3 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 F max, Operating Frequency (kHz) Operating Frequency vs Collector Current 180 160 140 120 ZCS 100 VCE = 400V D = 50% RG = 1.25Ω TJ = 125°C TC=75°C 80 60 ZVS 40 Hard switching 20 0 50 100 150 200 250 300 350 400 450 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF350SK60G – Rev 2 July, 2006 IC , Collector Current (A)