APTGF180H60G Full - bridge NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control VBUS Q1 VCES = 600V IC = 180A @ Tc = 80°C Q3 G3 E1 E3 OUT1 OUT2 Q2 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Q4 G2 G4 E2 E4 0/VBUS OUT1 G1 VBUS G2 0/VBUS E1 E2 E3 E4 G4 G3 OUT2 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 600 220 180 630 ±20 833 Tj = 150°C 400A @ 600V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF180H60G – Rev 2 July, 2006 G1 APTGF180H60G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Test Conditions VR=600V 3 IF = 200A IF = 400A IF = 200A IF = 200A VR = 400V di/dt =400A/µs www.microsemi.com Typ 8.6 0.94 0.8 660 580 400 26 25 150 Max 300 1000 2.5 Unit 5 ±200 V nA Max Unit µA V nF nC ns 30 26 25 170 ns 40 8.6 mJ 7 Min 600 Tj = 25°C Tj = 125°C Tc = 80°C Typ 2.0 2.2 Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 180A R G = 2.5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 180A R G = 2.5 Ω VGE = 15V Tj = 125°C VBus = 400V IC = 180A Tj = 125°C R G = 2.5 Ω Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Min VGS = 15V VBus = 300V IC = 180A Fall Time Tf Test Conditions VGE = 0V Tj = 25°C VCE = 600V Tj = 125°C T VGE =15V j = 25°C IC = 180A Tj = 125°C VGE = VCE, IC = 2mA VGE = 20 V, VCE = 0V Typ Max 350 750 Tj = 125°C 200 1.6 1.9 1.4 Tj = 25°C 180 Tj = 125°C 220 Tj = 25°C 780 Tj = 125°C 2900 Unit V µA A 1.8 V ns nC 2-6 APTGF180H60G – Rev 2 July, 2006 Symbol Characteristic APTGF180H60G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.15 0.32 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF180H60G – Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTGF180H60G Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 250µs Pulse Test < 0.5% Duty cycle 500 600 TJ=-55°C TJ=25°C Ic, Collector Current (A) 400 300 TJ=125°C 200 100 250µs Pulse Test < 0.5% Duty cycle 500 400 TJ=25°C 300 200 TJ=125°C 100 0 0 0 1 2 3 0 4 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle 500 400 300 200 TJ=125°C 100 TJ=25°C TJ=-55°C 0 VCE, Collector to Emitter Voltage (V) 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) 6 Ic=360A 5 4 3 Ic=180A 2 Ic=90A 1 0 6 8 10 12 14 14 V CE =300V 12 10 V CE =480V 8 6 4 2 0 0 100 200 300 400 500 600 700 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle VCE=120V IC = 180A TJ = 25°C 16 10 8 7 4 Gate Charge 18 VCE, Collector to Emitter Voltage (V) Ic, Collector Current (A) 600 On state Voltage vs Junction Temperature 4 3.5 Ic=360A 3 2.5 Ic=180A 2 1.5 Ic=90A 1 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 0.5 0 16 -50 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 300 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) TJ=-55°C 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature (°C) 4-6 APTGF180H60G – Rev 2 July, 2006 Ic, Collector Current (A) 600 APTGF180H60G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) 30 VGE = 15V 25 Tj = 25°C VCE = 400V RG = 2.5Ω 20 15 50 100 150 200 250 250 VGE=15V, TJ=125°C 200 150 100 50 300 50 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VGE=15V, TJ=125°C 20 250 300 60 TJ = 125°C 40 20 TJ = 25°C 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) 50 300 Turn-On Energy Loss vs Collector Current VCE = 400V RG = 2.5Ω 12 Eoff, Turn-off Energy Loss (mJ) 16 Eon, Turn-On Energy Loss (mJ) 200 VCE = 400V, VGE = 15V, RG = 2.5Ω tf, Fall Time (ns) tr, Rise Time (ns) VCE = 400V R G = 2.5Ω 0 T J=125°C, VGE=15V 8 TJ=25°C, VGE=15V 4 0 50 100 150 200 250 12 VCE = 400V VGE = 15V RG = 2.5Ω 10 8 24 Eon, 360A Eoff, 360A Eoff, 180A 16 Eon, 180A Eoff, 90A 8 Eon, 90A 0 0 5 10 15 20 Gate Resistance (Ohms) 25 www.microsemi.com TJ = 125°C 6 TJ = 25°C 4 2 50 100 150 200 250 ICE, Collector to Emitter Current (A) 300 Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ) VCE = 400V VGE = 15V T J= 125°C 300 0 300 Switching Energy Losses vs Gate Resistance 32 100 150 200 250 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current ICE, Collector to Emitter Current (A) Switching Energy Losses (mJ) 150 Current Fall Time vs Collector Current 80 40 100 ICE, Collector to Emitter Current (A) 80 60 VGE=15V, TJ=25°C VCE = 400V RG = 2.5Ω 20 VCE = 400V Eon, 360A V GE = 15V RG = 2.5Ω 16 Eoff, 360A 12 Eon, 180A 8 Eoff, 180A 4 Eon, 90A Eoff, 90A 0 0 25 50 75 100 125 TJ, Junction Temperature (°C) 5-6 APTGF180H60G – Rev 2 July, 2006 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APTGF180H60G Capacitance vs Collector to Emitter Voltage Reverse Bias Safe Operating Area 450 IC, Collector Current (A) C, Capacitance (pF) 100000 Cies 10000 Coes 1000 Cres 400 350 300 250 200 150 100 50 0 100 0 10 20 30 40 0 50 200 400 600 800 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.9 0.7 0.5 0.3 0.04 0.02 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 150 120 ZCS VC E = 400V D = 50% R G = 2.5Ω TJ = 125°C Tc=75°C 90 60 ZVS 30 Hard switching 0 40 80 120 160 200 IC, Collector Current (A) 240 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF180H60G – Rev 2 July, 2006 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 180