TRIQUINT AGR18090E

Preliminary Data Sheet
September 2003
AGR18090E
90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Introduction
Table 1. Thermal Characteristics
The AGR18090E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced
data for global evolution (EDGE), and multicarrier
class AB power amplifier applications. This device is
manufactured using advanced LDMOS technology
offering state-of-the-art performance and reliability. It
is packaged in an industry-standard package and is
capable of delivering a typical output power of 90 W,
which makes it ideally suited for today’s wireless
base station RF power amplifier applications.
AGR18090EU
AGR18090EF
Figure 1. Available Packages
Features
Typical performance ratings for GSM EDGE
(f = 1.840 GHz, POUT = 30 W):
— Modulation spectrum:
@ ±400 kHz = –63 dBc.
@ ±600 kHz = –73 dBc.
— Error vector magnitude (EVM) = 1.7%.
— Gain = 15 dB.
— Drain Efficiency = 31%.
Typical continuous wave (CW) performance over
entire digital communication system (DCS) band:
— P1dB: 90 W typ.
— Power gain: @ P1dB = 14 dB.
— Efficiency @ P1dB = 50% typ.
— Return loss: –10 dB.
High-reliability gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
90 W minimum output power.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 26 Vdc, 1.840 GHz, 90 W CW output power.
Large signal impedance parameters available.
Parameter
Thermal Resistance,
Junction to Case:
AGR18090EU
AGR18090EF
Sym
Value
Unit
Rı JC
Rı JC
0.75
0.75
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Total Dissipation at TC = 25 °C:
AGR18090EU
AGR18090EF
Derate Above 25 ˇC:
AGR18090EU
AGR18090EF
Operating Junction Temperature
Storage Temperature Range
Sym Value
VDSS
65
VGS –0.5, 15
ID
8.5
Unit
Vdc
Vdc
Adc
PD
PD
230
230
W
W
—
—
TJ
1.31
1.31
200
W/°C
W/°C
°C
TSTG –65, 150
°C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR18090E
HBM
MM
CDM
Minimum (V)
Class
500
50
1500
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be
observed.
AGR18090E
90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Preliminary Data Sheet
September 2003
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol
Min
Typ
Off Characteristics
200 µA)
Drain-source Breakdown Voltage (VGS = 0, ID = 300
V(BR)DSS
65
—
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
IDSS
—
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
Max
—
Unit
Vdc
—
—
3.0
150
9
µAdc
—
S
µAdc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1 A)
GFS
—
6.4
VGS(Q)
—
3.8
Gate Threshold Voltage (VDS = 10 V, ID = 300 µA)
VGS(TH)
Drain-source On-voltage (VGS = 10 V, ID = 1 A)
VDS(ON)
Gate Quiescent Voltage (VDS = 28 V, IDQ = 800 mA)
—
—
4.8
Vdc
—
0.11
—
Vdc
Symbol
Min
Typ
Max
Unit
CRSS
—
2.1
—
pF
COSS
—
48
—
pF
—
Vdc
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Drain-to-gate Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Drain-to-source Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Test Fixture)
Functional Tests (in Supplied
Agere Systems
Supplied Test Fixture)1
Power Gain
(VDS = 26 V, POUT = 90 W, IDQ = 800 mA)
Drain Efficiency
(VDS = 26 V, POUT = 90 W, IDQ = 800 mA)
GL
—
14
—
dB
η
—
50
—
%
—
–63
—
dBc
—
90
—
W
–12
–8
EDGE Linearity Characterization
(POUT = 30 W, f = 1.840 GHz, VDS = 26 V, IDQ = 800 mA)
Modulation spectrum @ ±400 kHz
Modulation spectrum @ ±600 kHz
Output Power
(VDS = 26 V, 1 dB gain compression, IDQ = 800 mA)
Input Return Loss
Ruggedness
(VDS = 26 V, POUT = 90 W, IDQ = 800 mA, VSWR = 10:1, all
angles)
1. Across full DCS band, 1.805 GHz—1.880 GHz.
P1dB
IRL
ψ
—
—
–73
—
No degradation in output
power.
dBc
dB
Preliminary Data Sheet
September 2003
AGR18090E
90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Test Circuit Illustrations for AGR18090E
VGG
R3
FB1
VDD
R1
+
+
C6
Z1
RF INPUT
C5
R2
C1
Z2
C4
C3
Z3
Z11
Z4
C2
Z5
C7
Z12
2
1
3
C8
Z6
C9
Z7
C10
Z8
C11
C12
C13
Z9 C14
Z10
RF OUTPUT
DUT
PINS: 1. DRAIN, 2. SOURCE, 3. GATE
A. Schematic
Parts List:
� Microstrip line: Z1 0.685 in. x 0.067 in.; Z2 0.280 in. x 0.067 in.: Z3 0.300 in. x 0.265 in.; Z4 0.150 in. x 0.465 in.; Z5 0.275 in. x 1.060 in.;
Z6 0.330 in. x 1.130 in.; Z7 0.220 in. x 0.375 in.; Z8 0.300 in. x 0.205 in.; Z9 0.290 in. x 0.067 in.; Z10 0.550 in. x 0.067 in.;
Z11 0.545 in. x 0.030 in.; Z12 0.800 in. x 0.050 in.
®
� ATC chip capacitors: C1, C14, 12 pF 100B120JW500X; C2, C7, 10 pF 100B100JW500X.
®
� Sprague tantalum surface-mount chip capacitors: C6, C13, 22 µF, 35 V.
®
� Kemet 0603 size chip capacitor: C8, 220 pF; 1206 size chip capacitors: C5, C11, 0.1 µF C1206104K5RAC7800;
1812 size chip capacitor: C12, 1.0 µF C1812C105K5RACTR.
®
� Murata 0805 size chip capacitors: C4, C10. 0.01 µF GRM40X7R103K100AL.
� 1206 size chip resistors: R1 4.7 kΩ, R2 560 kΩ, R3 1.02 kΩ.
®
� Vitramon 1206 size chip capacitors: C3, C9, 22000 pF.
®
� Fair-rite ferrite bead FB1 2743019447.
®
� Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
B. Component Layout
Figure 2. AGR18090E Test Circuit
AGR18090E
90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
U CT
IN D
0.48
90
0.1
0.49
170
10
0.4
GTH S
TO
0.6
20
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
± 180
50
1.
0
)
/ Yo
(-jB
CE
IV
CT
IN
DU
R
0
2.
1.8
5
0.36
-110
0.11
-100
-90
0.13
0.1
-70
40
-1
06
43
0.
8
0.0
2
0.4
0.4
1
0.4
0.39
0.38
F
0.37
0.12
9
0.0
0
-12
0.
07
30
-1
0.6
1.6
1.4
1.2
1.0
-4
0.14
-80
0.35
0.9
0
-4
0.15
0
-70
-5
6
4
(-j
5
,O
o)
0.7
0.1
0.3
0.8
35
5
3
-60
-5
0.3
7
VE
-60
0.1
CA P
AC
I TI
CE
CO
M
T
0.0
Z
X/
-30
32
RE
AC
TA
N
0
-65 .5
18
0.
0.2
EN
0.
0
-5
-25
PO
N
0
0.4
31
0.
19
0.
0.
-75
0.6
0
-20
-85
AN
PT
CE
US
ES
0.8
3.
0.3
0
4
.4
4.0
0
-15 -80
0
1.
-15
0.2
4
0.
0.2
8
f1
-30
6
0.4
4
0.0
8
0.
0.2
9
0.2
1
0.3
ZS
0.2
2
f3
-4
5
0.4
0.6
5.0
0.48
f1
0.4
-10
0.2
ZL
10
0.1
-20
D
OW A R
7
HST
0.4
N GT
-170
EL E
AV
W
<Ð
-90
-160
0.2
f3
20
L OA D < Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
0.0
0.2
0.0 Ð > W A V EL E
N
0.
0.49
8
0.25
0.2
6
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL ECTI ON COEFFI CI EN T I N D EG
REES
L E OF
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
L E OF
ANG
Z0 = 4 Ω
WA R
D
Typical Performance Characteristics
GHz (f)
1.805 (f1)
1.8425 (f2)
1.880 (f3)
ZL Ω
ZS Ω
(Complex Source Impedance) (Complex Optimum Load Impedance)
1.90 – j2.16
2.05 – j1.27
1.77 – j1.97
2.00 – j1.14
1.69 – j1.82
1.97 – j1.06
GATE (2)
ZS
DRAIN (1)
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
AGR18090E
90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
60
100
50
POUT
80
40
EFFICIENCY
60
30
40
20
20
10
0
0
0
1
2
3
4
5
6
DRAIN EFFICIENCY (%)Z
OUTPUT POWER (POUT) (W)Z
120
INPUT POWER (PIN) (W)Z
VDD = 26 V, IDQ = 800 mA, f = 1842.5 MHz, CW Measurement
Figure 4. Output Power and Efficiency vs. Input Power
17
Gps, POWER GAIN (dB)Z
16
IDQ = 950 mA
IDQ = 1100 mA
15
14
IDQ = 500 mA
13
12
IDQ = 650 mA
IDQ = 800 mA
11
10
9
8
0.1
1.0
10.0
100.0
OUTPUT POWER (POUT) (W)Z
VDD = 26 V, f = 1842.5 MHz, CW Measurement
Figure 5. CW Power Gain vs. Output Power
1000.0
AGR18090E
90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
16.0
0
15.5
-2
Gps
15.0
-4
14.5
-6
14.0
-8
13.5
-10
13.0
12.5
-12
IRL
-14
12.0
-16
11.5
-18
IRL, INPUT RETURN LOSS (dB)Z
Gps, POWER GAIN (dB)Z
Typical Performance Characteristics (continued)
11.0
-20
1750 1770 1790 1810 1830 1850 1870 1890 1910 1930 1950
f, FREQUENCY (MHz)Z
VDD = 26 V, IDQ = 800 mA, PIN = 25 dBm, CW Measurement
Figure 6. Wideband Gain and Return Loss
16.5
IDQ = 1100 mA
15.5
IDQ = 950 mA
15.0
IDQ = 800 mA
Gps, POWER GAIN (dB)Z
16.0
IDQ = 650 mA
14.5
IDQ = 500 mA
14.0
13.5
13.0
12.5
12.0
1.0
10.0
OUTPUT POWER (POUT) (WPEP)Z
VDD = 26 V, fc = 1842.5 MHz, Two Tone Measurement, 100 kHz Spacing
Figure 7. Two Tone Power Gain vs. Output Power
100.0
AGR18090E
90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
THIRD ORDER INTERMODULATIONZ
DISTORTION (IMD3) (dBc)Z
-20.0
-25.0
-30.0
IDQ = 500 mA
-35.0
-40.0
IDQ = 650 mA
IDQ = 1100 mA
-45.0
IDQ = 950 mA
-50.0
IDQ = 800 mA
-55.0
-60.0
1.0
10.0
100.0
OUTPUT POWER (POUT) (WPEP)Z
VDD = 26 V, fc = 1842.5 MHz, Two Tone Measurement, 100 kHz Spacing
0
45
40
-10
EFFICIENCY
35
SPECTRAL REGROWTH (dBc)Z
Gps, POWER GAIN (dB) DRAIN EFFICIENCY (%)Z
Figure 8. Intermodulation Distortion vs. Output Power
-20
30
-30
25
-40
20
400 kHz
Gps
15
-60
-70
10
5
0
-50
600 kHz
1.0
10.0
OUTPUT POWER (POUT) (W)Z
-80
-90
100.0
VDD = 26 V, IDQ = 800 mA, fc = 1842.5 MHz, EDGE Modulation
Figure 9. Power Gain, Efficiency, and Spectral Regrowth vs. Output Power
AGR18090E
90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
9
Gps, POWER GAIN (dB) DRAIN EEFICIENCY (%)
45
40
EFFICIENCY
35
8
7
30
6
25
5
20
4
Gps
15
3
2
10
5
0
EVM
1.0
10.0
OUTPUT POWER (POUT) (W)
VDD = 26 V, IDQ = 800 mA, fc = 1842.5 MHz, EDGE Modulation
Figure 10. Power Gain, Efficiency, and EVM vs. Output Power
1
0
100.0
ERROR VECTOR MAGNITUDE (EVM)
Typical Performance Characteristics (continued)
AGR18090E
90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR18090EU
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
1
PEAK DEVICES
AGR18090U
AGR18090U
M-AGR21090U
YYWWLL
XXXXX
YYWWLL
ZZZZZZZ
ZZZZZZZ
3
3
2
2
AGR18090EF
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
1
PEAK DEVICES
AGR18090F
M-AGR21090F
AGR18090F
YYWWLL
XXXXX
YYWWLL
ZZZZZZZ
ZZZZZZZ
3
3
2
2
Label Notes:
� M before the part number denotes model program. X before the part number denotes engineering prototype.
�
�
�
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok,
Thailand). XXXXX = five-digit wafer lot number.
ZZZZZZZ = seven-digit assembly lot number on production parts.
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.