TRIQUINT T1P3003028-SP

T1P3003028-SP
30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Introduction
The T1P3003028-SP is a POWERBANDTM discrete pHEMT,
depletion mode, RF Power transistor designed to operate from
500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across
the entire band when operated in the TriQuint wide-band test
fixture. The T1P3003028-SP can also be used in narrow band applications and is rated at 40Watts P1dB at 2GHz.
Figure 1. Available Packages
— Narrow Band up to 2GHz
— 12dB gain
— 58% efficiency
— 40Watt P1dB
Table 1. Maximum Ratings
Sym
V+
Parameter
Positive Supply Voltage
V-
Negative Supply Voltage Range
l+
Positive Supply Current
Notes
28 V
2/
–5V to 0V
5.6A
| lG | Gate Supply Current
PD
TCH
Value
2/
70 mA
Power Dissipation
See note 3
Operating Channel Temperature
o
150 C
2/ 3/
4/
1/ These ratings represent the maximum operable values for this
device.
2/ Combinations of supply voltage, supply current, input power,
and output power shall not exceed PD.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited
to: PD(max) = (150 °C – TBASE °C) / 5.6 (°C/W)
4/ Junction operating temperature will directly affect the device
median time to failure(TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
Table 2. Thermal Information
Parameter
Features
— Pulse Characterization
— Exceptional Instantaneous band-width performance from
500MHz – 2GHz
— Increased efficiency results in significant advantages
— Smaller and lighter systems
— Reduced system component costs
— Reduced energy consumption
— Typical Performance ratings
— Wide-Band 500MHz-2GHz
(as tested in TriQuint Wideband Fixture)
— 10dB gain
— 50% Efficiency
— 30Watt P1dB
Test Conditions
θJC Thermal Resis- Vd = 10 V
tance (channel to
Idq = 900 mA
backside of carrier) Pdiss = 9 W
TCH
(°C)
θJC
(°C/W)
TM
(HRS)
145
5.6
1.6E+6
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
T1P3003028-SP
30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TA = 25 °C.
Table 3. dc Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
Idss
—
4000
—
mA
Transconductance
Gm
—
3300
—
mS
Pinch-off Voltage
VP
-1.5
-1
-0.6
V
VBGS
VBGD
-40
—
-30
V
-45
—
-35
V
Symbol
Min
Typ
Max
Unit
Breakdown Voltage Gate-Source
Breakdown Voltage Gate-Drain
Table 4. RF Characteristics
Parameter
Functional Tests, Instantaneous Band-Width 100uS, 10% (Tested in TriQuint’s Wide-Band Test Fixture)
Gain @ P1dB, 500MHz-2GHz
(VDS = 28 V, POUT = 30 W, IDD = 400 mA)
G
—
10
—
dB
P1dB, 500MHz-2GHz
(VDS = 28 V, POUT = 30 W, IDD = 400 mA)
P1dB
—
30
—
W
Power Added Efficiency, 500MHz-2GHz
(VDS = 28 V, POUT = 30 W, IDD = 400 mA)
—
—
45
—
%
Functional Tests, Narrow Band RF Performance 100uS, 10% (2GHz)
Gain
(VDS = 28 V, POUT = 40 W, IDQ = 400 mA)
G
—
12
—
dB
P1dB
—
40
—
W
Drain Efficiency
(VDS = 28 V, POUT = P1dB, IDQ = 400 mA)
—
—
55
—
%
Ruggedness
(VDS = 28 V, POUT = 40 W, IDQ = 400 mA, f = 500 MHz,
VSWR = 3:1, all angles)
—
Output Power
(VDS = 28 V, 1 dB compression, IDQ = 400 mA)
No degradation in output power.
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
T1P3003028-SP
30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Figure 2. P1dB & Efficiency (Narrow Band Performance Plotted over Frequency)
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
T1P3003028-SP
30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Figure 3. P1dB & Gain (Narrow Band Performance Plotted over Frequency)
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
T1P3003028-SP
30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Figure 4. Plot of impedances to be presented to the Source & Load of the device for optimal RF performance
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
T1P3003028-SP
30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Table 5. Table of RF performance that the device typically exhibits when placed in the specified impedance environment. The
impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or Load-pull
system. The data is representative of typical device performance for both 100uSecond pulse width, 10% duty cycle conditions and
1000uSecond pulse width, 10% duty cycle conditions.
frequency gamma- gammain (real) in (imag)
Z-in
(real)
Z-in
(imag)
gammaout (real)
gamma- Z-out Z-out
out (imag) (real) (real)
Gain
P1db
[W]
P1db
[dBm]
PAE [%]
500
-0.948
0.162
0.98
4.24
-0.713
0.033
8.37
1.14
21.75
42.0
46.2
68
600
-0.953
0.130
0.98
3.39
-0.716
0.040
8.26
1.34
20.42
42.0
46.2
67
700
-0.956
0.106
0.98
2.76
-0.719
0.045
8.12
1.53
19.30
42.0
46.2
67
800
-0.958
0.087
0.98
2.26
-0.723
0.051
7.98
1.71
18.32
42.0
46.2
66
900
-0.959
0.072
0.98
1.86
-0.728
0.056
7.81
1.87
17.46
42.0
46.2
65
1000
-0.960
0.059
0.98
1.53
-0.733
0.061
7.64
2.01
16.69
42.0
46.2
65
1100
-0.961
0.048
0.98
1.24
-0.738
0.065
7.46
2.14
16.00
42.0
46.2
64
1200
-0.961
0.038
0.98
0.98
-0.743
0.069
7.27
2.26
15.36
42.0
46.2
63
1300
-0.961
0.029
0.98
0.75
-0.749
0.072
7.08
2.35
14.78
42.0
46.2
63
1400
-0.962
0.021
0.98
0.55
-0.755
0.075
6.88
2.43
14.24
42.0
46.2
62
1500
-0.962
0.014
0.98
0.36
-0.761
0.078
6.68
2.50
13.73
42.0
46.2
62
1600
-0.962
0.007
0.98
0.18
-0.767
0.080
6.47
2.54
13.26
42.0
46.2
61
1700
-0.962
0.001
0.98
0.02
-0.774
0.081
6.27
2.58
12.82
42.0
46.2
60
1800
-0.962
-0.005
0.98
-0.14
-0.780
0.083
6.07
2.60
12.40
42.0
46.2
60
1900
-0.962
-0.011
0.98
-0.28
-0.786
0.083
5.87
2.60
12.01
42.0
46.2
59
2000
-0.962
-0.016
0.98
-0.42
-0.792
0.084
5.67
2.60
11.64
42.0
46.2
58
2100
-0.962
-0.022
0.98
-0.56
-0.799
0.084
5.48
2.58
11.28
42.0
46.2
58
2200
-0.961
-0.027
0.98
-0.69
-0.805
0.083
5.29
2.55
10.94
42.0
46.2
57
2300
-0.961
-0.031
0.98
-0.81
-0.811
0.083
5.10
2.52
10.62
42.0
46.2
56
2400
-0.961
-0.036
0.98
-0.93
-0.817
0.082
4.93
2.47
10.31
42.0
46.2
56
2500
-0.961
-0.041
0.98
-1.05
-0.823
0.080
4.75
2.42
10.01
42.0
46.2
55
Note: Data sheet will be updated with TriQuint wide-band test fixture characterization data in the near future.
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
T1P3003028-SP
30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Package Dimensions
Note: All dimensions in inches. Scale 8:1
.320
.087
.090
.350
45° X .085
.063
.006
.090
2
.351
4
.040
1
.360
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband