TRIQUINT T1P3002028-SP

T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Introduction
The T1P3002028-SP is a POWERBANDTM discrete pHEMT,
depletion mode, RF Power transistor designed to operate from
500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across
the entire band when operated in the TriQuint wide-band test
fixture. The T1P3002028-SP can also be used in narrow band applications and is rated at 26Watts P1dB at 2GHz.
Figure 1. Available Packages
— Narrow Band up to 2GHz
— 12dB gain
— 58% efficiency
— 26Watt P1dB
Table 1. Maximum Ratings
Sym
V+
Parameter
Positive Supply Voltage
V-
Negative Supply Voltage Range
l+
Positive Supply Current
Notes
28 V
2/
–5V to 0V
5.6A
| lG | Gate Supply Current
PD
TCH
Value
2/
70 mA
Power Dissipation
See note 3
Operating Channel Temperature
o
150 C
2/ 3/
4/
1/ These ratings represent the maximum operable values for this
device.
2/ Combinations of supply voltage, supply current, input power,
and output power shall not exceed PD.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited
to: PD(max) = (150 °C – TBASE °C) / 8.3 (°C/W)
4/ Junction operating temperature will directly affect the device
median time to failure(TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
Table 2. Thermal Information
Parameter
Features
— Pulse Characterization
— Exceptional Instantaneous band-width performance from
500MHz – 2GHz
— Increased efficiency results in significant advantages
— Smaller and lighter systems
— Reduced system component costs
— Reduced energy consumption
— Typical Performance ratings
— Wide-Band 500MHz-2GHz
(as tested in TriQuint Wideband Fixture)
— 10dB gain
— 50% Efficiency
— 20Watt P1dB
Test Conditions
θJC Thermal Resis- Vd = 10 V
tance (channel to
Idq = 900 mA
backside of carrier) Pdiss = 9 W
TCH
(°C)
θJC
(°C/W)
TM
(HRS)
145
8.3
1.6E+6
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TA = 25 °C.
Table 3. dc Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
Idss
—
2500
—
mA
Transconductance
Gm
—
2000
—
mS
Pinch-off Voltage
VP
-1.5
-1
-0.6
V
VBGS
VBGD
-40
—
-30
V
-45
—
-35
V
Symbol
Min
Typ
Max
Unit
Breakdown Voltage Gate-Source
Breakdown Voltage Gate-Drain
Table 4. RF Characteristics
Parameter
Functional Tests, Instantaneous Band-Width 100uS, 10% (Tested in TriQuint’s Wide-Band Test Fixture)
Gain @ P1dB, 500MHz-2GHz
(VDS = 28 V, POUT = 20 W, IDD = 240 mA)
G
—
10
—
dB
P1dB, 500MHz-2GHz
(VDS = 28 V, POUT = 20 W, IDD = 240 mA)
P1dB
—
20
—
W
Power Added Efficiency, 500MHz-2GHz
(VDS = 28 V, POUT = 20 W, IDD = 240 mA)
—
—
45
—
%
Functional Tests, Narrow Band RF Performance 100uS, 10% (2GHz)
Gain
(VDS = 28 V, POUT = 26 W, IDQ = 240 mA)
G
—
12
—
dB
P1dB
—
26
—
W
Drain Efficiency
(VDS = 28 V, POUT = P1dB, IDQ = 240 mA)
—
—
58
—
%
Ruggedness
(VDS = 28 V, POUT = 26 W, IDQ =240 mA, f = 500 MHz,
VSWR = 3:1, all angles)
—
Output Power
(VDS = 28 V, 1 dB compression, IDQ = 240 mA)
No degradation in output power.
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Figure 2. P1dB & Efficiency (Narrow Band Performance Plotted over Frequency)
100
90
Vdd = 28 V, Idq = 240 mA
90
80
Pulse Conditions: 100 us, 10%
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
PAE [%]
P1dB [W]
100
0
2.5
Frequency [GHz]
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Figure 3. P1dB & Gain (Narrow Band Performance Plotted over Frequency)
100
24
90
22
Vdd = 28 V, Idq = 240 mA
80
Pulse Conditions: 100 us, 10%
70
18
60
16
50
14
40
12
30
10
20
8
10
6
0
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
Gain [dB]
P1dB [W]
20
4
2.5
Frequency [GHz]
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Figure 4. Plot of impedances to be presented to the Source & Load of the device for optimal RF performance
j5
500 MHz
j2.5
j10
2500 MHz
j1
j25
500 MHz
1
0
2500 MHz
−j1
2.5
5
10
25
∞
Zs − Optimal Input Impedance for Gain
−j25
ZL − Optimal load match for P1dB
ZL − Optimal load match for PAE
ZL − Compromise for P1dB and PAE
−j2.5
−j10
−j5
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Table 5. Table of RF performance that the device typically exhibits when placed in the specified impedance environment. The
impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or Load-pull
system. The data is representative of typical device performance for both 100uSecond pulse width, 10% duty cycle conditions and
1000uSecond pulse width, 10% duty cycle conditions.
frequency gamma- gammain (real) in (imag)
Z-in
(real)
Z-in
(imag)
gammagammaout (real) out (imag)
Z-out
(real)
Z-out
(real)
Gain
P1db
[W]
P1db
[dBm]
PAE [%]
500
-0.922
0.221
1.35
5.90
-0.576
0.049 13.39
1.96
21.70
26.0
44.2
68
600
-0.931
0.179
1.35
4.75
-0.580
0.058 13.21
2.32
20.53
26.0
44.2
67
700
-0.936
0.147
1.35
3.90
-0.585
0.067 13.00
2.65
19.54
26.0
44.2
67
800
-0.939
0.123
1.35
3.24
-0.590
0.075 12.76
2.96
18.68
26.0
44.2
66
900
-0.942
0.103
1.35
2.71
-0.596
0.083 12.51
3.25
17.92
26.0
44.2
65
1000
-0.943
0.086
1.35
2.27
-0.602
0.090 12.23
3.51
17.24
26.0
44.2
65
1100
-0.945
0.071
1.35
1.88
-0.609
0.097 11.94
3.74
16.63
26.0
44.2
64
1200
-0.945
0.059
1.35
1.55
-0.616
0.104 11.64
3.95
16.07
26.0
44.2
63
1300
-0.946
0.048
1.35
1.26
-0.623
0.110 11.33
4.14
15.56
26.0
44.2
63
1400
-0.946
0.038
1.35
0.99
-0.631
0.115 11.01
4.29
15.08
26.0
44.2
62
1500
-0.947
0.028
1.35
0.75
-0.639
0.120 10.69
4.42
14.64
26.0
44.2
62
1600
-0.947
0.020
1.35
0.52
-0.647
0.124 10.36
4.53
14.22
26.0
44.2
61
1700
-0.947
0.012
1.35
0.31
-0.656
0.127 10.04
4.62
13.83
26.0
44.2
60
1800
-0.947
0.005
1.35
0.12
-0.665
0.130
9.71
4.68
13.47
26.0
44.2
60
1900
-0.947
-0.003
1.35
-0.07
-0.673
0.133
9.39
4.72
13.12
26.0
44.2
59
2000
-0.947
-0.009
1.35
-0.24
-0.682
0.135
9.08
4.74
12.79
26.0
44.2
58
2100
-0.947
-0.016
1.35
-0.41
-0.691
0.136
8.77
4.74
12.48
26.0
44.2
58
2200
-0.947
-0.022
1.35
-0.57
-0.699
0.137
8.47
4.72
12.18
26.0
44.2
57
2300
-0.947
-0.027
1.35
-0.72
-0.708
0.138
8.17
4.69
11.89
26.0
44.2
56
2400
-0.947
-0.033
1.35
-0.87
-0.716
0.138
7.89
4.65
11.62
26.0
44.2
56
2500
-0.946
-0.039
1.35
-1.02
-0.725
0.138
7.61
4.59
11.36
26.0
44.2
55
Note: Data sheet will be updated with TriQuint wide-band test fixture characterization data in the near future.
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Package Dimensions
Note: All dimensions in inches. Scale 8:1
.320
.087
.090
.350
45° X .085
.063
.006
.090
2
.351
4
.040
1
.360
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband