TRIQUINT AGR21045EF

Data Sheet
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21045EF is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for wideband
code division multiple access (W-CDMA), single and
multicarrier class AB wireless base station power
amplifier applications.
Figure 1. AGR21045EF (flanged) Package
Features
Typical performance for two carrier 3GPP
W-CDMA systems. F1 = 2135 MHz and
F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 – 5 MHz and
F2 + 5 MHz. Third-order distortion is measured
over 3.84 MHz BW at F1 – 10 MHz and
F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01%
(probability) CCDF:
— Output power: 10 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –33 dBc.
— ACPR: –37 dBc.
— Return loss: –12 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2140 MHz, 45 W continuous wave (CW) output power.
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case
Sym
Rı JC
Value
1.5
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Sym Value
Drain-source Voltage
VDSS
65
Gate-source Voltage
VGS –0.5, 15
Total Dissipation at TC = 25 °C PD
117
Derate Above 25 °C
—
0.67
Operating Junction TemperaTJ
200
ture
Storage Temperature Range TSTG –65, 150
Unit
Vdc
Vdc
W
W/°C
°C
°C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR21045EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be
observed.
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol
Min
Typ
Max
V(BR)DSS
65
—
—
IDSS
—
Unit
Off Characteristics
= 200µA
50 µA)
Drain-source Breakdown Voltage (VGS = 0, ID =
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
—
Vdc
—
—
2
75
5
µAdc
—
3.2
—
S
3.0
3.8
µAdc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 0.5 A)
GFS
Gate Threshold Voltage (VDS = 10 V, ID = 150 µA)
VGS(TH)
2.8
Drain-source On-voltage (VGS = 10 V, ID = 0.5 A)
VDS(ON)
—
Gate Quiescent Voltage (VDS = 28 V, ID = 400 mA)
VGS(Q)
3.4
4.8
Vdc
0.22
—
Vdc
4.6
Vdc
Table 5. RF Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
—
1.0
—
pF
13.5
14.5
—
dB
—
–33
–32
dBc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
CRSS
Test Fixture)
Functional Tests (in Supplied
Agere Systems
Supplied Test Fixture)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
GPS
η
IM3
24
26
—
%
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
ACPR
—
–37
–35
dBc
Power Output, 1 dB Compression Point
(VDD = 28 V, fC = 2140.0 MHz)
IRL
P1dB
—
–12
–9
dB
Input Return Loss*
Output Mismatch Stress
(VDD = 28 V, POUT = 45 W (CW), IDQ = 400 mA, fC = 2140.0 MHz
VSWR = 10:1; [all phase angles])
ψ
42
47
—
W
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz. VDD = 28 Vdc, IDQ = 400 mA, and
POUT = 10 W avg.
Data Sheet
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21045EF
FB1
VGG
R1
+
C4
C2
C3
Z1
RF INPUT
C1
Z2
VDD
PINS:
1. DRAIN
2. GATE
3. SOURCE
Z5
Z3
Z4
2
DUT
1
+
Z10
Z6
Z7
3
C6
Z8
C7
C8
C9
C10
C5
Z9
RF OUTPUT
A. Schematic
Parts List:
■ Microstrip line: Z1 0.780 in. x 0.066 in.; Z2 0.225 in. x 0.090 in.; Z3 0.360 in. x 0.090 in.; Z4 0.320 in. x 0.520 in.; Z5 0.050 in. x 0.430 in.;
Z6 0.335 in. x 0.330 in.; Z7 0.215 in. x 0.330 in.; Z8 0.450 in. x 0.066 in.; Z9 0.685 in. x 0.066 in.; Z10 0.050 x 0.715 in.
®
■ ATC chip capacitor: C1, C5: 8.2 pF 100B8R2JW500X; C2, C6 6.8 pF 100B6R8JW500X.
®
■ Kemet capacitor: C8 0.01 µF C1206104K5RAC7800; C9 0.1 µF GRM40X7R103K100AL.
®
■ Vitramon 1206 capacitor: C3, C7: 22,000 pF.
®
■ Sprague tantalum capacitor: C4, C10: 22 µF, 35 V.
®
■ Fair-Rite ferrite bead: FB1 2743019447.
■ 1206 size chip resistor: R1 12 Ω.
®
■ Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
B. Component Layout
Figure 2. AGR21045EF Test Circuit
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Data Sheet
U CT
8
0.
IN D
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
ECTI ON COEFFI CI E
0.27
N
L
T
F
E
I
N
R
D
EGRE
L E OF
ES
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
L E OF
ANG
0.6
10
0.1
0.4
20
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
0.2
20
0.4
0.1
)
/ Yo
(-jB
CE
1.
0
AN
PT
CE
US
ES
IV
CT
DU
IN
,O
o)
0
0
1.0
0.9
1.2
0.14
-80
0.36
5
-90
0.13
0.37
-110
0.12
0.38
0.1
0.11
-100
9
0.0
0
-12
40
-70
-1
06
(-j
5
0.
T
0.
2.
1.8
1.6
0.7
1.4
0.15
0.35
0
-4
-4
4
-70
-5
6
0.8
5
-3
0.1
0.3
5
3
-60
-5
0.3
7
VE
-60
0.1
CA P
AC
I TI
0.6
32
-75
R
0.2
-30
CE
CO
M
EN
-65
18
RE
AC
TA
N
PO
N
5
0.0
Z
X/
0.
0.
0.4
0.
0
-5
-25
31
0.
44
0.6
0
-20
0
0.8
6
0.4
4
0.0
0
-15
4.0
3.
0.3
.45
0
1.
-15
0.2
0.
07
30
-1
43
0.
8
0.0
2
0.4
.41
0
0.4
0.39
2110 (f1)
2140 (f2)
2170 (f3)
f1
19
MHz (f)
ZS
0.
Z0 = 10 Ω
f2
0
-4
4
0.
-30
ZL
ZL Ω
ZS Ω
(Complex Source Impedance) (Complex Optimum Load Impedance)
3.26 – j9.91
5.66 – j6.84
3.20 – j9.64
5.49 – j6.61
3.13 – j9.41
5.31 – j6.40
GATE (2)
ZS
DRAIN (1)
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
0.2
8
f1
0.2
9
0.2
1
0.3
f3
0.2
2
-80
8
0.
5.0
0.2
-10
-85
10
0.6
-20
0.0 Ð > W A V EL E
0.49
N GTH
S TOW
A RD
0.48
0.0
D <Ð
0.49
RD L OA
TOW A
0.48
7
S
180
±
H
.4
0
170
70
N GT
-1
E
L
VE
WA
<Ð
-90
90
-160
Typical Performance Characteristics
Data Sheet
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
16.0
15.5
POWER GAIN (dB) S
15.0
IDQ = 500 mA
IDQ = 450 mA
IDQ = 400 mA
14.5
14.0
13.5
13.0
IDQ = 350 mA
12.5
IDQ = 300
12.0
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
TWO-TONE
MEASUREMENT
10 MHz TONE
SPACING
11.5
11.0
0.10
1.00
10.00
100.00
OUTPUT POWER (W) PEP
Figure 4. Two-Tone Power Gain vs. Output Power and IDQ
-20.0
IMD3, THIRD ORDER (dBc)
-25.0
-30.0
-35.0
-40.0
-45.0
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
IDQ = 300 mA
IDQ = 350 mA
TWO-TONE
MEASUREMENT
10 MHz TONE
SPACING
-50.0
-55.0
-60.0
-65.0
0.10
IDQ = 500 mA
IDQ = 400 mA
1.00
IDQ = 450 mA
10.00
OUTPUT POWER (W) PEP
Figure 5. IMD3 vs. Output Power and IDQ
100.00
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Data Sheet
Typical Performance Characteristics (continued)
0.0
-5.0
-10.0
VDD = 28 V, POUT = 45 W PEP, Fo = 2140 MHz
-15.0
IMD (dBc)Z
-20.0
-25.0
IM3
-30.0
IM5
-35.0
-40.0
IM7
-45.0
-50.0
-55.0
-60.0
0.1
1
10
100
TWO-TONE SPACING (MHz)Z
20.00
DRAIN EFFICIENCY
18.00
16.00
GAIN
GAIN (dB)Z
14.00
12.00
2 CARRIER W-CDMA 3GPP,
PEAK TO AVERAGE = 8.5 dB @ 0.01% CCDF
10 MHz SPACING, 3.84 MHz CBW,
FC = 2140 MHz, VDD = 28 V, IDQ = 400 mA
10.00
8.00
6.00
IMD3
4.00
ACPR
2.00
0.00
0.00
5.00
10.00
15.00
20.00
OUTPUT POWER (WATTS-AVERAGE)Z
Figure 7. Gain, Efficiency, IMD3, and ACPR vs. Output Power
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
-45.0
-50.0
-55.0
25.00
EFF (%), IMD3 (dBc), ACPR (dBc)Z
Figure 6. IMD vs. Tone Spacing
Data Sheet
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
20.00
18.00
EFFICIENCY
16.00
GAIN (dB)Z
14.00
GAIN
12.00
2 CARRIER W-CDMA 3GPP,
PEAK TO AVERAGE = 8.5 dB @ 0.01% CCDF
10 MHz SPACING, 3.84 MHz CBW,
POUT = 10 W, VDD = 28 V, IDQ = 400 mA
10.00
8.00
RL
6.00
4.00
IMD3
2.00
ACPR
0.00
2100
2110
2120
2130
2140
2150
2160
2170
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
-45.0
-50.0
2180
FREQUENCY (MHz)Z
Figure 8. Broadband Performance
+5
F1
F2
-0
2 CARRIER W-CDMA
3GPP
PEAK-TO-AVG = 8.5 dB
@ 0.01% CCDF
10 MHz SPACING
3.84 MHz CBW
POUT = 10 W
VDD = 28 V
IDQ = 400 mA
-5
-10
-15
-20
-25
-30
IMD3
IMD3
-35
-40
-45
ACPR
ACPR
CENTER 2.140 GHz
SPAN 50 MHz
Figure 9. Spectral Plot
EFF (%), RL (dB), IMD3 (dBc), ACPR (dBc)Z
Typical Performance Characteristics (continued)
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Data Sheet
Typical Performance Characteristics (continued)
4.0
15.0
AM to AM
(POWER
GAIN [dB])
14.0
2.0
0.0
13.0
12.0
11.0
10.0
-4.0
AM to PM
(PHASE
[DEGREES])
-6.0
-8.0
-10.0
VDD = 28 Vdc
FO = 2140 MHz
IDQ = 400 mA
CW INPUT
-12.0
-14.0
-16.0
-18.0
9.0
10.0
15.0
20.0
25.0
30.0
35.0
PIN (dBm)Z
Figure 10. AM-AM and AM-PM Characteristics
-20.0
40.0
PHASE (DEGREES)Z
POWER GAIN (dB)Z
-2.0
Data Sheet
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR21045EF
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
1
PEAK DEVICES
AAGR21045XF
GR21045F
YYWWLL
XXXXX
YYWW
LL
ZZZZZZZ
ZZZZZZZ
3
2
3
2
Label Notes:
■ M before the part number denotes model program. X before the part number denotes engineering prototype.
■
■
■
■
The last two letters of the part number denote wafer technology and package type.
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
ZZZZZZZ = seven-digit assembly lot number on production parts.
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.