2SB985 PNP General Purpose Transistors P b Lead(Pb)-Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6.0 V Collector Current - Continuous IC -3.0 mA Total Device Dissipation TA=25°C PD 0.9 mW Junction Temperature Tj 150 °C Storage Temperature Tstg WEITRON 1/5 http://www.weitron.com.tw -55 to 150 °C 19-Feb-09 2SB985 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -6 V Collector cut-off current ICBO VCB=-40V, IE=0 -1 μA Emitter cut-off current IEBO VEB=-4V, IC=0 -1 μA hFE(1) VCE=-2V, IC=-100mA hFE(2) VCE=-2V, IC=-3A 100 560 DC current gain 40 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=-100mA -0.7 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB=-100mA -1.2 V fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF VCE=-10V, IC=-50mA 150 MHz VCB=-10V, IE=0, f=1MHz 39 pF hFE(1) Rank Range WEITRON http://www.weitron.com.tw R S T U 100-200 140-280 200-400 280-560 2/5 19-Feb-09 2SB985 WEITRON http://www.weitron.com.tw 3/5 19-Feb-09 2SB985 WEITRON http://www.weitron.com.tw 4/5 19-Feb-09 2SB985 TO-92MOD Outline Dimensions unit:mm G J TO-92MOD Dim A B C D E G J K L M D M C K E A B L M in M ax 4.70 5.10 1.73 2.03 0.40 0.60 0.90 1.10 0.40 0.50 5.80 6.20 8.40 8.80 1.50Typ 2.90 3.10 12.20 13.45 WEITRON http://www.weitron.com.tw 5/5 19-Feb-09