WEITRON 2SK3018W

2SK3018W
N-Channel POWER MOSFET
3 DRAIN
P b Lead(Pb)-Free
3
1
2
1
GATE
Description:
*Gate
Protection
Diode
* Low on-resistance.
* Fast switching speed.
* Low voltage drive (2.5V) makes this device ideal for
portable equipment.
* Easily designed drive circuits.
* Easy to parallel.
SOT-323(SC-70)
2 SOURCE
Features:
* Simple Drive Requirement
* Small Package Outline
Maximum Ratings (TA=25°C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
T A=25°C
ID
100
mA
Pulsed Drain Current (tp ≤ 10µS)
IDM
400
mA
Power Dissipation (TA=25°C)*
PD
200
mW
Operating Junction Temperature Range
TJ
+150
°C
Tstg
-55 to +150
°C
Storage Temperature Range
* With each pin mounted on the recommended lands.
Device Marking
2SK3018 = KN
WEITRON
http://www.weitron.com.tw
1/5
30-Oct-09
2SK3018W
Electrical Characteristics(TA=25°C Unless otherwise noted)
Min
Typ
Max
Unit
V(BR)DSS
30
-
-
V
Gate-Threshold Voltage
VDS=3V , ID=100µA
VGS (th)
0.8
-
1.5
V
Gate-Source Leakage Current
VGS=±20V
IGSS
-
-
±1.0
µA
Drain-Source Leakage Current
VDS=30V, VGS=0
IDSS
-
-
1.0
µA
RDS(on)
-
5.0
7.0
8.0
13
Ω
gfs
20
-
-
mS
Input Capacitance
VDS=5V, VGS=0V, f=1.0MHz
Ciss
-
13
-
Output Capacitance
VDS=5V, VGS=0V, f=1.0MHz
Coss
-
9
-
Reverse Transfer Capacitance
VDS=5V, VGS=0V, f=1.0MHz
Crss
-
4
-
Turn-On Time
VGS=5V, I D=10mA, R L =500Ω ,R G =10Ω
td(on)
-
15
-
Rise time
VGS=5V, I D=10mA, R L =500Ω ,R G =10Ω
tr
-
35
-
Turn-Off delay Time
VGS=5V, I D=10mA, R L =500Ω ,R G =10Ω
td(on)
-
80
-
Fall time
VGS=5V, I D=10mA, R L =500Ω ,R G =10Ω
tr
-
80
-
Characteristic
Symbol
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=10µA
Static Drain-Source On-Resistance
VGS=4V, I D=10mA
VGS=2.5V, ID=1mA
Forward Transconductance
VDS=3V, ID=10mA
Dynamic
pF
Switching
WEITRON
http://www.weitron.com.tw
ns
2/5
30-Oct-09
2SK3018W
TYPICAL ELECTRICAL CHARACTERISTICS
200m
3V
Ta=25°C
Pulsed
3.5V
0.1
2.5V
0.05
2V
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
3
4
0.1m
0
5
DRAIN-SOURCE VOLTAGE : VDS (V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) ( Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
50
Ta=125°C
75°C
25°C
- 25°C
10
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
20
2
1
0.005
0.02
0.05
0.1
0.2
ID=100mA
6
ID=50mA
4
3
2
0.05
0.01
0.005
0
−50 −25
0.001
0.0001 0.0002
25
50
75
100 125
150
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
WEITRON
http://www.weitron.com.tw
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
DRAIN CURRENT : ID (A)
Fig.8 Forward transfer
admittance vs. drain current
3/5
125 150
5
I D=0.1A
ID=0.05A
5
10
15
20
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
0.02
0.002
100
GATE-SOURCE VOLTAGE : VGS (V)
Ta=−25°C
25°C
75°C
125°C
1
75
10
0
0
0.5
VDS=3V
Pulsed
0.1
50
Ta=25°C
Pulsed
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
0.01
25
15
5
0.5
0.001 0.002
0
Fig.3 Gate threshold voltage vs.
channel temperature
0.2
0
0
−50 −25
CHANNEL TEMPERATURE : Tch (°C)
10
VGS=4V
Pulsed
5
0.5
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι )
7
1
4
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : ID (A)
8
1.5
Fig.2 Typical transfer characteristics
VGS=4V
Pulsed
20
VDS=3V
ID=0.1mA
Pulsed
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical output characteristics
50
3
2
1
2
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
2
20m
REVERSE DRAIN CURRENT : IDR (A)
1
50m
0.2m
VGS=1.5V
0
0
VDS=3V
Pulsed
100m
DRAIN CURRENT : I D (A)
DRAIN CURRENT : ID (A)
4V
GATE THRESHOLD VOLTAGE : VGS(th) (V)
0.15
VGS=0V
Pulsed
100m
50m
20m
Ta=125°C
75°C
25°C
−25°C
10m
5m
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
30-Oct-09
50
Ta=25°C
Pulsed
100m
20
50m
20m
10m
VGS=4V
0V
5m
2m
1m
0.5m
1000
Ta=25°C
f=1MHZ
VGS=0V
Ciss
10
5
Coss
Crss
2
Ta=25°C
VDD=5V
VGS=5V
RG =10Ω
Pulsed
tf
500
SWITCHING TIME : t (ns)
200m
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : IDR (A)
2SK3018W
td(off)
200
100
1
50
20
tr
td(on)
10
5
0.2m
0.1m
0
0.5
1
0.5
0.1
1.5
0.2
0.5
1
2
5
10
20
50
2
0.1 0.2
DRAIN-SOURCE VOLTAGE : VDS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.11 Typical capacitance vs.
drain-source voltage
Fig.10 Reverse drain current vs.
source-drain voltage ( ΙΙ )
0.5
1
2
5
10
20
50
100
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
Switching characteristics measurement circuit
Pulse width
VGS
RG
ID
D.U.T.
VDS
RL
ton
WEITRON
10%
90%
90%
tr
td(on)
http://www.weitron.com.tw
50%
10%
VDS
VDD
Fig.13 Switching time measurement circuit
90%
50%
10%
VGS
td(off)
tf
toff
Fig.14 Switching time waveforms
4/5
30-Oct-09
2SK3018W
SOT-323 Outline Demensions
Unit:mm
A
SOT-323
B
T OP V IE W
Dim
A
B
C
D
E
G
H
J
K
L
M
C
D
E
G
H
K
J
WEITRON
http://www.weitron.com.tw
L
M
5/5
Min
0.30
1.15
2.00
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
30-Oct-09