Data Sheet 1.2V Drive Nch + Pch MOSFET VT6M1 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) 1.2 Features 1) Low on-resistance. 2) Small package(VMT6). 3) Low voltage drive(1.2V drive). 1.2 (6) 0.5 (5) (4) 0.92 0.14 VMT6 0.14 (1) (2) (3) 0.16 0.13 0.4 0.4 0.8± 0.1 Abbreviated symbol : M01 Application Switching Inner circuit Packaging specifications Type Package Code Basic ordering unit (pieces) VT6M1 Taping T2CR 8000 (6) (5) (4) ∗1 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗2 ∗1 (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Tr1 : N-ch Tr2 : P-ch Unit Drain-source voltage VDSS 20 20 Gate-source voltage VGSS 8 10 V Continuous ID 100 100 mA Pulsed IDP Drain current Power dissipation Channel temperature Range of storage temperature PD Tch Tstg *1 *2 400 400 V mA 0.12 W / TOTAL W / ELEMENT 150 55 to 150 C C 0.15 *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/8 2011.09 - Rev.A Data Sheet VT6M1 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Parameter Gate-source leakage Min. Typ. Max. Unit IGSS - - 10 A VGS=±8V, VDS=0V 20 - - V ID=1mA, V GS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Gate threshold voltage Conditions Symbol IDSS - - 1 A VDS=20V, VGS=0V VGS (th) 0.3 - 1.0 V VDS=10V, ID=100A - 2.5 3.5 - 3.0 4.2 - 3.8 5.3 - 4.5 9.0 ID=100mA, VGS=4.5V ID=100mA, VGS=2.5V Static drain-source on-state resistance RDS (on)* - 6.0 18.0 Forward transfer admittance l Yfs l * 180 - - mS VDS=10V, ID=100mA ID=50mA, VGS=1.8V ID=20mA, VGS=1.5V ID=10mA, VGS=1.2V Input capacitance Ciss - 7.1 - pF VDS=10V Output capacitance Coss - 3.3 - pF VGS=0V Reverse transfer capacitance Crss - 1.7 - pF f=1MHz Turn-on delay time td(on)* - 5 - ns VDD 10V, I D=50mA tr * - 4 - ns VGS=4.5V td(off)* tf * - 20 38 - ns ns RL=200RG=10 Min. Typ. Max. Unit - - 1.2 V Rise time Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Conditions Is=100mA, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/8 2011.09 - Rev.A Data Sheet VT6M1 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=10V, VDS=0V 20 - - V ID=1mA, V GS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Gate threshold voltage - 1 A VDS=20V, VGS=0V 0.3 - 1.0 V VDS=10V, ID=100A - 2.5 3.8 IDSS VGS (th) Static drain-source on-state resistance RDS (on)* Forward transfer admittance l Yfs l * Conditions ID=100mA, VGS=4.5V - 3.4 5.1 - 4.8 8.2 ID=50mA, V GS=2.5V - 6.0 13.2 - 13.3 53.2 120 - - mS VDS=10V, ID=100mA ID=20mA, V GS=1.8V ID=10mA, V GS=1.5V ID=1mA, V GS=1.2V Input capacitance Ciss - 15.0 - pF VDS=10V Output capacitance Coss - 4.0 - pF VGS=0V Reverse transfer capacitance Crss - 1.5 - pF f=1MHz Turn-on delay time td(on)* - 46 - ns VDD 10V, ID=50mA tr * - 62 - ns VGS=4.5V td(off)* - 325 137 - ns ns RL=200RG=10 Min. Typ. Max. Unit Conditions - - 1.2 V Is=100mA, VGS=0V Rise time Turn-off delay time Fall time tf * *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/8 2011.09 - Rev.A Data Sheet VT6M1 Electrical characteristic curves 〈Tr.1(Nch)〉 0.1 0.1 0.06 0.08 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 0.08 VGS= 1.2V 0.04 1 VGS= 4.5V VGS= 4.0V VGS= 2.5V VGS= 1.8V VGS= 1.5V 0.02 VDS= 10V Pulsed Ta=25°C Pulsed 0.06 DRAIN CURRENT : ID[A] VGS= 4.5V VGS= 4.0V VGS= 2.5V VGS= 1.8V VGS= 1.5V VGS= 1.2V 0.04 0.02 0.1 0.01 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.001 Ta=25°C Pulsed 0 0 0 0.2 0.4 0.6 0.8 0.0001 0 1 2 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 8 10 VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 10000 . 1000 100 0.0001 0.001 0.01 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1000 0.001 0.01 0.1 0.001 0.01 0.1 1000 0.001 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 100000 VGS= 1.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 0.0001 10000 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C VGS= 2.5V Pulsed 100 0.0001 1 100000 10000 2 Fig.3 Typical Transfer Characteristics 10000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1.5 Fig.2 Typical Output Characteristics(Ⅱ) DRAIN-CURRENT : ID[A] 100000 1 100000 DRAIN-CURRENT : ID[A] VGS= 1.8V Pulsed 0.5 GATE-SOURCE VOLTAGE : VGS[V] VGS= 4.5V Pulsed 100 0.0001 1 0 DRAIN-SOURCE VOLTAGE : VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 6 100000 100000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 4 1000 100 0.0001 0.001 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 4/8 1 VGS= 1.2V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10000 1000 100 0.0001 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅵ) 2011.09 - Rev.A 10000 1 VDS= 10V Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed SOURCE CURRENT : Is [A] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.01 0.1 1 Ta=25℃ Pulsed 8000 ID= 0.01A 6000 ID= 0.1A 4000 2000 0 0 0.5 1 1.5 DRAIN-CURRENT : ID[A] SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Forward Transfer Admittance vs. Drain Current Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage 1000 0 2 4 6 8 GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 100 tf 100 CAPACITANCE : C [pF] Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed td(off) SWITCHING TIME : t [ns] Data Sheet VT6M1 td(on) 10 Ta=25°C f=1MHz VGS=0V Ciss 10 Crss tr Coss 1 1 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.13 Switching Characteristics www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage 5/8 2011.09 - Rev.A Data Sheet VT6M1 〈Tr.2(Pch)〉 1 0.1 VDS= -10V Pulsed Ta=25°C Pulsed 0.08 0.06 VGS= -4.5V VGS= -4.0V VGS= -2.5V VGS= -2.0V VGS= -1.8V 0.04 VGS= -1.5V 0.02 VGS= -1.2V VGS= -1.5V VGS= -4.5V VGS= -4.0V VGS= -2.5V VGS= -2.0V VGS= -1.8V 0.06 0.04 0 0.2 0.4 0.6 0.8 VGS= -1.2V T =25°C a Pulsed 2 100000 6 8 10 VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 0.01 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 10000 1000 100 0.0001 1 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 0.001 0.01 0.1 0.001 0.01 0.1 100 0.0001 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.01 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1 0.001 100000 VGS= -1.5V Pulsed 10000 1000 100 0.0001 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1000 1 100000 10000 2 10000 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1.5 VGS= -2.5V Pulsed DRAIN-CURRENT : -ID[A] 100000 1 100000 VGS= -4.5V Pulsed DRAIN-CURRENT : -ID[A] VGS= -1.8V Pulsed 0.5 GATE-SOURCE VOLTAGE : -VGS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10000 0.001 0 Fig.3 Typical Transfer Characteristics 100000 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 4 Fig.2 Typical output characteristics(Ⅱ) Fig.1 Typical output characteristics(Ⅰ) 100 0.0001 0.01 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.0001 0 1 0.1 0.001 0.02 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] DRAIN CURRENT : -ID[A] 0.08 DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 10000 1000 100 0.0001 0.001 0.01 0.1 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 6/8 VGS= -1.2V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1000 100 0.0001 0.001 0.01 0.1 1 DRAIN-CURRENT : -ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅵ) 2011.09 - Rev.A 1 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.01 0.01 0.1 10000 VGS=0V Pulsed 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VDS= -10V Pulsed REVERSE DRAIN CURRENT : -IS[A] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C Ta=25°C Pulsed 8000 ID= -0.001A 6000 ID= -0.1A 4000 2000 0 0.01 0 1 DRAIN-CURRENT : -ID[A] 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage Fig.10 Forward Transfer Admittance vs. Drain Current 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : -VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 100 1000 Ta=25°C VDD= -10V VGS=-4.5V RG=10Ω Pulsed 100 Ciss CAPACITANCE : C [pF] td(off) SWITCHING TIME : t [ns] Data Sheet VT6M1 tf tr td(on) 10 Coss 1 Crss Ta=25°C f=1MHz VGS=0V 0 10 0.01 0.1 1 0.01 0.1 1 10 100 DRAIN-CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VDS[V] Fig.13 Switching Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/8 2011.09 - Rev.A Data Sheet VT6M1 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 50% 10% D.U.T. VDD RG 90% 50% 10% VGS VDS RL 10% 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit tf toff Fig.1-2 Switching Waveforms <Tr2(Pch)> Pulse width ID VDS VGS VGS 10% 50% 90% 50% RL 10% D.U.T. RG VDD VDS 90% td(on) tr ton Fig.1-1 Switching Time Measurement Circuit 10% 90% td(off) tf toff Fig.1-2 Switching Waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/8 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A