Silicon N-Channel MOSFET

LESHAN RADIO COMPANY, LTD.
Silicon N-Channel MOSFET
L2SK3541MT5G
Applications
3
Interfacing,switching(30V,100mA)
2
Features
1
Low on-resistance
SOT-723
Fast switching speed
Low voltage drive(2.5V) makes this ideal for portable equipment
Equivalent circuit
Drive circuits can be simple
3 Drain
Parallel use is easy
we declare that the material of product
compliance with RoHS requirements.
1 Gate
ORDERING INFORMATION
Device
L2SK3541MT5G
Marking
Shipping
∗ Gate
Protection
Diode
2 Source
8000/Tape & Reel
KN
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
ID
± 100
IDM
± 400
PD
150
TJ, Tstg
-55 to 150
Parameter
Continuous Drain Current
Pulsed Drain Current
1)
Total Power Dissipation
2)
Operating Junction and Storage Temperature Range
Unit
V
mA
mW
o
C
1) Pw≤10µs, Duty cycle≤1%
2) With each pin mounted on the recommended lands.
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L2SK3541MT5G
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±1
µA
VGS=±20V, VDS=0V
Drain-source breakdown voltage
V(BR)DSS
30
−
−
V
ID=10µA, VGS=0V
Zero gate voltage drain current
IDSS
−
−
1.0
µA
VDS=30V, VGS=0V
0.8
−
1.5
V
VDS=3V, ID=100µA
Parameter
Gate-source leakage
Conditions
Gate threshold voltage
VGS(th)
Static drain-source on-state
resistance
RDS(on)
−
5
8
Ω
ID=10mA, VGS=4V
RDS(on)
−
7
13
Ω
ID=1mA, VGS=2.5V
Forward transfer admittance
|Yfs|
20
−
−
ms
ID=10mA, VDS=3V
Input capacitance
Ciss
−
13
−
pF
VDS=5V
Output capacitance
Coss
−
9
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
4
−
pF
f=1MHz
Turn-on delay time
td(on)
−
15
−
ns
ID=10mA, VDD
tr
−
35
−
ns
VGS=5V
td(off)
−
80
−
ns
RL=500Ω
tf
−
80
−
ns
RG=10Ω
Rise time
Turn-off delay time
Fall time
5V
0.15
200m
3V
3.5V
0.1
2.5V
0.05
2V
2
20m
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
3
4
0.1m
0
5
DRAIN-SOURCE VOLTAGE : VDS (V)
10
50
VGS=4V
Pulsed
Ta=125°C
75°C
25°C
−25°C
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
4
1.5
1
0.5
0
−50 −25
0.5
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
20
5
2
1
0.005
0.01
0.02
0.05
0.1
0.2
25
50
75
100
15
10
0.5
0.001 0.002
0
125 150
Fig.3 Gate threshold voltage vs.
channel temperature
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
VDS=3V
ID=0.1mA
Pulsed
CHANNEL TEMPERATURE : Tch (°C)
Fig.2 Typical transfer characteristics
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
20
3
2
2
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical output characteristics
50
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
1
50m
0.2m
VGS=1.5V
0
0
VDS=3V
Pulsed
100m
Ta=25°C
Pulsed
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
4V
GATE THRESHOLD VOLTAGE : VGS(th) (V)
zElectrical characteristic curves
0.5
DRAIN CURRENT : ID (A)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
L2SK3541MT5G
0.5
8
VDS=3V
Pulsed
0.2
ID=100mA
6
ID=50mA
5
4
3
2
Ta=−25°C
25°C
75°C
125°C
0.1
0.05
0.02
0.01
0.005
1
0.002
0
−50 −25
0.001
0.0001 0.0002
0
25
50
75
100 125
150
50
Ta=25°C
Pulsed
20m
VGS=4V
50m
20m
Ta=125°C
75°C
25°C
−25°C
10m
5m
2m
1m
0.5m
0.2m
0.1m
0.5
0
0V
5m
2m
1m
0.5m
Ciss
10
5
Coss
Crss
2
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
1000
Ta=25°C
f=1MHZ
VGS=0V
20
50m
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : IDR (A)
0.05 0.1 0.2
VGS=0V
Pulsed
100m
Fig.8 Forward transfer
admittance vs. drain current
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
100m
0.005 0.01 0.02
200m
DRAIN CURRENT : ID (A)
CHANNEL TEMPERATURE : Tch (°C)
200m
0.0005 0.001 0.002
1
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
Pulsed
tf
500
SWITHING TIME : t (ns)
7
10m
REVERSE DRAIN CURRENT : I DR (A)
VGS=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
9
td(off)
200
100
50
20
tr
td(on)
10
5
0.2m
0.1m
0
0.5
1
1.5
0.5
0.1
0.2
0.5
1
2
5
10
20
50
2
0.1 0.2
0.5
DRAIN-SOURCE VOLTAGE : VDS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.11 Typical capacitance vs.
drain-source voltage
Fig.10 Reverse drain current vs.
source-drain voltage (ΙΙ)
1
2
5
10
20
50
100
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
zSwitching characteristics measurement circuit
Pulse width
VGS
RG
ID
D.U.T.
VDS
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
90%
90%
td (on)
ton
Fig.13 Switching time measurement circuit
tr
td (off)
tf
toff
Fig.14 Switching time waveforms
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L2SK3541MT5G
SOT−723
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
e
HE
L
2
b 2X
0.08 (0.0032) X Y
DIM
A
b
b1
C
D
E
e
HE
L
C
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.20
0.27
0.15
0.25
0.3
0.35
0.12
0.17
0.07
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.20
0.25
0.15
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0079 0.0106
0.010 0.012 0.014
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
SOLDERING FOOTPRINT
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm Ǔ
ǒinches
Rev.O 4/4