L2SK3018WT1G

LESHAN RADIO COMPANY, LTD.
Silicon N-channel MOSFET
100 mA, 30 V
L2SK3018WT1G
S-L2SK3018WT1G
•
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for portable equipment.
4) Easily designed drive circuits.
5) Easy to parallel.
3
1
2
SC-70
• ESD>500V
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and
N - Channel
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Drain
MAXIMUM RATINGS
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
±100
mA
IDP∗
±400
mA
Total power dissipation (Tc=25°C)
PD∗2
200
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
Drain current
Continuous
ID
Pulsed
1
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
Gate
∗ Gate
Protection
Diode
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
MARKING DIAGRAM
& PIN ASSIGNMENT
ORDERING INFORMATION
Device
Marking
L2SK3018WT1G
S-L2SK3018WT1G
KN
3000 Tape & Reel
L2SK3018WT3G
S-L2SK3018WT3G
KN
10000 Tape & Reel
Source
Drain
3
Shipping
KN
1
Gate
KN
M
M
Symbol
Parameter
2
Source
= Device Code
= Month Code
Rev .A 1/5
LESHAN RADIO COMPANY, LTD.
L2SK3018WT1G , S-L2SK3018WT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±1
µA
VGS = ±20V, VDS = 0V
Conditions
V(BR)DSS
30
−
−
V
ID = 10µA, VGS = 0V
IDSS
−
−
1
µA
VDS = 30V, VGS = 0V
Gate threshold voltage
VGS(th)
0.8
−
1.5
V
VDS = 3V, ID = 100µA
Static drain-source on-state
resistance
RDS(on)
−
5
8
Ω
ID = 10mA, VGS = 4V
RDS(on)
−
7
13
Ω
ID = 1mA, VGS = 2.5V
Forward transfer admittance
|Yfs |
20
−
−
mS
VDS = 3V, ID = 10mA
Input capacitance
Ciss
−
13
−
pF
VDS = 5V
Output capacitance
Coss
−
9
−
pF
VGS = 0V
Reverse transfer capacitance
Crss
−
4
−
pF
f = 1MHz
Turn-on delay time
td(on)
−
15
−
ns
ID = 10mA, VDD
Zero gate voltage drain current
Rise time
Turn-off delay time
Fall time
tr
−
35
−
ns
VGS = 5V
td(off)
−
80
−
ns
RL = 500Ω
tr
−
80
−
ns
RG = 10Ω
5V
Rev .A 2/5
LESHAN RADIO COMPANY, LTD.
L2SK3018WT1G , S-L2SK3018WT1G
0.15
200m
3V
3.5V
0.1
2.5V
0.05
2V
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
3
4
0.1m
0
5
DRAIN-SOURCE VOLTAGE : VDS (V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
50
Ta=125°C
75°C
25°C
−25°C
10
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
20
5
2
1
0.5
0.001 0.002
0.005
0.02
0.05
0.1
0.2
ID=100mA
ID=50mA
4
9
2
0.1
0.05
0.01 0.5
0.005
0.002
0.001
0.0001 0.0002
25
50
75
100 125
150
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
0.0005 0.001 0.002
0.005 0.01 0.02
50
75
100
125 150
10
5
I D=0.1A
ID=0.05A
5
10
15
20
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
0.02
0
−50 −25
25
GATE-SOURCE VOLTAGE : VGS (V)
Ta=−25°C
25°C
75°C
125°C
1
0
Ta=25°C
Pulsed
0
0
0.5
VDS=3V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
0.01
0.2
0
0
−50 −25
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
6
3
0.5
15
10
VGS=4V
Pulsed
5
1
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current ( Ι )
7
1.5
Fig.3 Gate threshold voltage vs.
channel temperature
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : ID (A)
8
VDS=3V
ID=0.1mA
Pulsed
CHANNEL TEMPERATURE : Tch (°C)
Fig.2 Typical transfer characteristics
VGS=4V
Pulsed
20
4
2
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical output characteristics
50
3
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
2
20m
REVERSE DRAIN CURRENT : IDR (A)
1
50m
0.2m
VGS=1.5V
0
0
VDS=3V
Pulsed
100m
Ta=25°C
Pulsed
DRAIN CURRENT : I D (A)
DRAIN CURRENT : ID (A)
4V
GATE THRESHOLD VOLTAGE : VGS(th) (V)
TYPICAL ELECTRICAL CHARACTERISTICS
0.05 0.1 0.2
0.5
DRAIN CURRENT : ID (A)
Fig.8 Forward transfer
admittance vs. drain current
VGS=0V
Pulsed
100m
50m
20m
Ta=125°C
75°C
25°C
−25°C
10m
5m
2m200m
1m
0.5m
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current vs.
source-drain voltage ( Ι )
Rev .A 3/5
LESHAN RADIO COMPANY, LTD.
50
Ta=25°C
Pulsed
100m
20
50m
20m
10m
VGS=4V
0V
5m
2m
1m
0.5m
1000
Ta=25°C
f=1MHZ
VGS=0V
Ciss
10
5
Coss
Crss
2
Ta=25°C
VDD=5V
VGS=5V
RG =10Ω
Pulsed
tf
500
SWITCHING TIME : t (ns)
200m
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : IDR (A)
L2SK3018WT1G , S-L2SK3018WT1G
td(off)
200
100
1
50
20
tr
td(on)
10
5
0.2m
0.1m
0
0.5
0.5
0.1
1.5
1
0.2
0.5
1
2
5
10
20
50
2
0.1 0.2
DRAIN-SOURCE VOLTAGE : VDS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.11 Typical capacitance vs.
drain-source voltage
Fig.10 Reverse drain current vs.
source-drain voltage ( ΙΙ )
0.5
1
2
5
10
20
50
100
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
zSwitching characteristics measurement circuit
Pulse width
VGS
RG
VGS
ID
D.U.T.
VDS
RL
50%
10%
VDS
VDD
10%
90%
90%
tr
td(on)
ton
Fig.13 Switching time measurement circuit
90%
50%
10%
td(off)
tf
toff
Fig.14 Switching time waveforms
Rev .A 4/5
LESHAN RADIO COMPANY, LTD.
L2SK3018WT1G , S-L2SK3018WT1G
SC−70
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
SOLDERING FOOTPRINT*
0.65
0.025
0.016
0.010
0.087
0.053
0.055
0.095
1
XX
M
1.9
0.075
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.
0.9
0.035
SCALE 10:1
0.079
MAX
0.040
0.004
XXM
0.65
0.025
0.7
0.028
0.012
0.004
0.071
0.045
0.047
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
GENERIC
MARKING DIAGRAM
L
A1
MIN
0.032
0.000
mm inches
Rev .A 5/5