LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G S-L2SK3018WT1G • Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. 3 1 2 SC-70 • ESD>500V • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and N - Channel Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Drain MAXIMUM RATINGS Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V ±100 mA IDP∗ ±400 mA Total power dissipation (Tc=25°C) PD∗2 200 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Drain current Continuous ID Pulsed 1 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. Gate ∗ Gate Protection Diode ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. MARKING DIAGRAM & PIN ASSIGNMENT ORDERING INFORMATION Device Marking L2SK3018WT1G S-L2SK3018WT1G KN 3000 Tape & Reel L2SK3018WT3G S-L2SK3018WT3G KN 10000 Tape & Reel Source Drain 3 Shipping KN 1 Gate KN M M Symbol Parameter 2 Source = Device Code = Month Code Rev .A 1/5 LESHAN RADIO COMPANY, LTD. L2SK3018WT1G , S-L2SK3018WT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Gate-source leakage Drain-source breakdown voltage Symbol Min. Typ. Max. Unit IGSS − − ±1 µA VGS = ±20V, VDS = 0V Conditions V(BR)DSS 30 − − V ID = 10µA, VGS = 0V IDSS − − 1 µA VDS = 30V, VGS = 0V Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS = 3V, ID = 100µA Static drain-source on-state resistance RDS(on) − 5 8 Ω ID = 10mA, VGS = 4V RDS(on) − 7 13 Ω ID = 1mA, VGS = 2.5V Forward transfer admittance |Yfs | 20 − − mS VDS = 3V, ID = 10mA Input capacitance Ciss − 13 − pF VDS = 5V Output capacitance Coss − 9 − pF VGS = 0V Reverse transfer capacitance Crss − 4 − pF f = 1MHz Turn-on delay time td(on) − 15 − ns ID = 10mA, VDD Zero gate voltage drain current Rise time Turn-off delay time Fall time tr − 35 − ns VGS = 5V td(off) − 80 − ns RL = 500Ω tr − 80 − ns RG = 10Ω 5V Rev .A 2/5 LESHAN RADIO COMPANY, LTD. L2SK3018WT1G , S-L2SK3018WT1G 0.15 200m 3V 3.5V 0.1 2.5V 0.05 2V 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 3 4 0.1m 0 5 DRAIN-SOURCE VOLTAGE : VDS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 50 Ta=125°C 75°C 25°C −25°C 10 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 20 5 2 1 0.5 0.001 0.002 0.005 0.02 0.05 0.1 0.2 ID=100mA ID=50mA 4 9 2 0.1 0.05 0.01 0.5 0.005 0.002 0.001 0.0001 0.0002 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.7 Static drain-source on-state resistance vs. channel temperature 0.0005 0.001 0.002 0.005 0.01 0.02 50 75 100 125 150 10 5 I D=0.1A ID=0.05A 5 10 15 20 Fig.6 Static drain-source on-state resistance vs. gate-source voltage 0.02 0 −50 −25 25 GATE-SOURCE VOLTAGE : VGS (V) Ta=−25°C 25°C 75°C 125°C 1 0 Ta=25°C Pulsed 0 0 0.5 VDS=3V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.01 0.2 0 0 −50 −25 Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) 6 3 0.5 15 10 VGS=4V Pulsed 5 1 DRAIN CURRENT : ID (A) Fig.4 Static drain-source on-state resistance vs. drain current ( Ι ) 7 1.5 Fig.3 Gate threshold voltage vs. channel temperature VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C DRAIN CURRENT : ID (A) 8 VDS=3V ID=0.1mA Pulsed CHANNEL TEMPERATURE : Tch (°C) Fig.2 Typical transfer characteristics VGS=4V Pulsed 20 4 2 GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical output characteristics 50 3 2 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 2 20m REVERSE DRAIN CURRENT : IDR (A) 1 50m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m Ta=25°C Pulsed DRAIN CURRENT : I D (A) DRAIN CURRENT : ID (A) 4V GATE THRESHOLD VOLTAGE : VGS(th) (V) TYPICAL ELECTRICAL CHARACTERISTICS 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A) Fig.8 Forward transfer admittance vs. drain current VGS=0V Pulsed 100m 50m 20m Ta=125°C 75°C 25°C −25°C 10m 5m 2m200m 1m 0.5m 0.2m 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.9 Reverse drain current vs. source-drain voltage ( Ι ) Rev .A 3/5 LESHAN RADIO COMPANY, LTD. 50 Ta=25°C Pulsed 100m 20 50m 20m 10m VGS=4V 0V 5m 2m 1m 0.5m 1000 Ta=25°C f=1MHZ VGS=0V Ciss 10 5 Coss Crss 2 Ta=25°C VDD=5V VGS=5V RG =10Ω Pulsed tf 500 SWITCHING TIME : t (ns) 200m CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) L2SK3018WT1G , S-L2SK3018WT1G td(off) 200 100 1 50 20 tr td(on) 10 5 0.2m 0.1m 0 0.5 0.5 0.1 1.5 1 0.2 0.5 1 2 5 10 20 50 2 0.1 0.2 DRAIN-SOURCE VOLTAGE : VDS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.11 Typical capacitance vs. drain-source voltage Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) 0.5 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) zSwitching characteristics measurement circuit Pulse width VGS RG VGS ID D.U.T. VDS RL 50% 10% VDS VDD 10% 90% 90% tr td(on) ton Fig.13 Switching time measurement circuit 90% 50% 10% td(off) tf toff Fig.14 Switching time waveforms Rev .A 4/5 LESHAN RADIO COMPANY, LTD. L2SK3018WT1G , S-L2SK3018WT1G SC−70 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 SOLDERING FOOTPRINT* 0.65 0.025 0.016 0.010 0.087 0.053 0.055 0.095 1 XX M 1.9 0.075 = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 0.9 0.035 SCALE 10:1 0.079 MAX 0.040 0.004 XXM 0.65 0.025 0.7 0.028 0.012 0.004 0.071 0.045 0.047 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 GENERIC MARKING DIAGRAM L A1 MIN 0.032 0.000 mm inches Rev .A 5/5