ROHM 2SK3065T100

2SK3065
Transistors
Small switching (60V, 2A)
2SK3065
!External dimensions (Units : mm)
Drain current
Reverse drain
current
4.0+0.5
−0.3
2.5+0.2
−0.1
1.0±0.3
Symbol
Limits
Unit
VDSS
60
V
V
VGSS
±20
Continuous
ID
2
A
Pulsed
IDP∗1
8
A
Continuous
IDR
2
A
Pulsed
IDRP∗1
A
°C
°C
Total power dissipation(Tc=25°C)
PD
Channel temperature
Tch
8
0.5
2∗2
150
Storage temperature
Tstg
−55∼+150
∗Gate
Protection
Diode
Min.
Typ.
Max.
Unit
−
−
±10
µA
V(BR)DSS
60
−
−
V
ID = 1mA, VGS = 0V
IDSS
−
−
10
µA
VDS = 60V, VGS = 0V
Gate threshold voltage
VGS(th)
0.8
−
1.5
V
VDS = 10V, ID = 1mA
Static drain-source on-state
resistance
RDS(on)
−
0.25
0.32
Ω
ID = 1A, VGS = 4V
RDS(on)
−
0.35
0.45
Ω
ID = 1A, VGS = 2.5V
Forward transfer admittance
Yfs∗
1.5
−
−
S
ID = 1A, VDS = 10V
Input capacitance
Ciss
−
160
−
pF
VDS = 10V
Output capacitance
Coss
−
85
−
pF
VGS = 0V
Reverse transfer capacitance
Crss
−
25
−
pF
f = 1MHz
Turn-on delay time
td(on)
−
20
−
ns
ID = 1A, VDD
tr
−
50
−
ns
VGS = 4V
td(off)
−
120
−
ns
RL = 30Ω
tf
−
70
−
ns
RG = 10Ω
Rise time
Turn-off delay time
Fall time
∗ Pw ≤ 300µs, Duty cycle ≤ 1%
Source
∗ A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.
IGSS
Zero gate voltage drain current
(1) Gate
(2) Drain
(3) Source
Abbreviated symbol : KE
W
Symbol
Drain-source breakdown voltage
0.4+0.1
−0.05
0.4±0.1
1.5±0.1
Gate
!Electrical characteristics (Ta = 25°C)
Parameter
(3)
0.5±0.1
Drain
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 When mounted on a 40 × 40 × 0.7 mm alumina board.
Gate-source leakage
(2)
!Internal equivalent circuit
!Absolute maximum ratings (Ta = 25°C)
Gate-source voltage
0.4±0.1
1.5±0.1
3.0±0.2
ROHM : MPT3
E I A J : SC-62
Drain-source voltage
1.5±0.1
1.6±0.1
(1)
!Structure
Silicon N-channel
MOS FET transistor
Parameter
4.5+0.2
−0.1
0.5±0.1
!Features
1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
Test Conditions
VGS = ±20V, VDS = 0V
30V
2SK3065
Transistors
!Packaging specifications
Package
Type
Taping
Code
T100
Basic ordering unit
(pieces)
1000
2SK3065
!Electrical characteristic curves
10
2
1
1
Pw=10ms
0.1
DC OPERATION
0.01
2V
1
Ta=25°C
Single Pulsed
25
50
75
100
125
150
0.001
0.1
175
GATE THRESHOLD VOLTAGE : VGS(th)(V)
VDS=10V
Pulsed
Ta=−25°C
25°C
75°C
125°C
1
0.1
0
1
2
3
4
5
GATE THRESHOLD VOLTAGE : VGS(th)(V)
Fig.4 Typical Transfer Characteristics
0
0
100
4
Fig.3
2
10mA
1
ID=1mA
0
−50 −25
0
25
50
75
100
125
CHANNEL TEMPERATURE : Tch(°C)
Fig.5
Gate Threshold Voltage vs.
Channel Temperature
150
10
Typical Output Characteristics
10
VDS=10V
3
5
DRAIN-SOURCE VOLTAGE : VDS(V)
Fig.2 Maximum Safe Operating Area
Total Power Dissipation vs.
Case Temperature
10
10
DRAIN-SOURCE VOLTAGE : VDS(V)
AMBIENT TEMPERATURE : Ta(°C)
Fig.1
VGS=1.5V
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on)(Ω)
0
0
DRAIN CURRENT : ID(A)
Ta=25°C
Pulsed
4V
3.5V
3V
2.5V
1ms
DRAIN CURRENT : ID(A)
When mounted on a 40 x 40 x 0.7 mm
aluminum-ceramic board.
2
100µs
Operating in this
area is limited by
RDS(on)
DRAIN CURRENT : ID(A)
TOTAL POWER DISSIPATION : PD(W)
3
VGS=4V
Pulsed
Ta=125°C
75°C
25°C
−25°C
1
0.1
0.01
0.1
1
DRAIN CURRENT : ID(A)
Fig.6 Static Drain-Source OnState Resistance vs.
Drain Current(Ι)
10
2SK3065
Transistors
Ta=125°C
75°C
25°C
−25°C
1
0.1
2A
0.5
ID=1A
0.25
0
0
10
5
REVERSE DRAIN CURRENT : IDR(A)
FORWARD TRANSFER ADMITTANCE : | Yfs |(S)
Ta=−25°C
25°C
125°C
75°C
1
1
0.1
0.4
Fig.11
0.8
1.2
Ciss
100
Coss
Crss
10
100
VDD 30V
VGS=4V
RG=10Ω
Ta=25°C
Pulsed
td(off)
100
tf
tr
10
0.1
DRAIN-SOURCE VOLTAGE : VSD(V)
Fig.13
Typical Capacitance vs.
Drain-Source Voltage
1
10
DRAIN CURRENT : ID(A)
Fig.14
50
75
100
125
150
Static Drain-Source OnState Resistance vs.
Channel Temperature
4V
1
VGS=0V
0.1
0.4
0.8
1.2
1.6
SOURCE-DRAIN VOLTAGE : VSD(V)
td(on)
1
0
25
Ta=25°C
Pulsed
0.01
0
1.6
Fig.12
Reverse Drain Current vs.
Source-Drain Voltage(Ι)
1000
SWITCHING TIME : t(ns)
CAPACITANCE : C(pF)
Ta=125°C
75°C
25°C
−25°C
0.1
0
10
SOURCE-DRAIN VOLTAGE : VSD(V)
VGS=0V
f=1MHZ
Ta=25°C
10
Fig.9
VGS=4V
Pulsed
0.01
0
10
Forward Trasfer Admitance vs.
Drain Current
1000
ID=1A
CHANNEL TEMPERATURE : Tch(°C)
1
DRAIN CURRENT : ID(A)
Fig.10
2A
0
−50 −25
20
Static Drain-Source OnState Resistance vs.
Gate-Source Voltage
10
VDS=10V
Pulsed
0.1
0.01
Fig.8
Static Drain-Source OnState Resistance vs.
Drain Current(ΙΙ)
10
15
VGS=4V
Pulsed
0.5
GATE-SOURCE VOLTAGE : VGS(V)
DRAIN CURRENT : ID(A)
Fig.7
10
REVERSE DRAIN CURRENT : IDR(A)
0.1
0.01
0.75
1
Switching Characteristics
(a measurement circuit diagram Fig.17 , it refers 18 times)
Reverse Drain Current vs.
Source-Drain Voltage(ΙΙ)
1000
REVERSE RECOVERY TIME : trr(ns)
1
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on)(Ω)
1
VGS=2.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on)(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on)(Ω)
10
di/dt=50A/µs
VGS=0V
Ta=25°C
Pulsed
100
10
0.1
1
REVERSE DRAIN CURRENT : IDR(A)
Fig.15
Reverse Recovery Time vs.
Reverse Drain Current
10
2SK3065
Transistors
NORMALIZED TRANSIENT
THERMAL RESISTANCE : r(t)
10
D=1
1
0.5
0.2
0.1 0.1
0.05
0.02
When mounted on a 40 x 40 x 0.7 mm
aluminum-ceramic board.
0.01
Ta=25°C
θth (ch-c) (t) = r (t) • θth (ch-c)
θth (ch-c) =62.5°C/W
0.01
Single pulse
PW
T
0.001
100µ
1m
10m
100m
1
D= PW
T
10
100
PULSE WIDTH : PW(s)
Fig.16
Normarized Transient Thermal Resistance vs. Pulse Width
!Switching characteristics measurement circuit
Pulse width
VGS
RG
ID
D.U.T.
VDS
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
90%
90%
tr
td(on)
ton
Fig.17 Switching Time Test Circuit
td(off)
tf
toff
Fig.18 Switching Time Waveforms