2SK3065 Transistors Small switching (60V, 2A) 2SK3065 !External dimensions (Units : mm) Drain current Reverse drain current 4.0+0.5 −0.3 2.5+0.2 −0.1 1.0±0.3 Symbol Limits Unit VDSS 60 V V VGSS ±20 Continuous ID 2 A Pulsed IDP∗1 8 A Continuous IDR 2 A Pulsed IDRP∗1 A °C °C Total power dissipation(Tc=25°C) PD Channel temperature Tch 8 0.5 2∗2 150 Storage temperature Tstg −55∼+150 ∗Gate Protection Diode Min. Typ. Max. Unit − − ±10 µA V(BR)DSS 60 − − V ID = 1mA, VGS = 0V IDSS − − 10 µA VDS = 60V, VGS = 0V Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS = 10V, ID = 1mA Static drain-source on-state resistance RDS(on) − 0.25 0.32 Ω ID = 1A, VGS = 4V RDS(on) − 0.35 0.45 Ω ID = 1A, VGS = 2.5V Forward transfer admittance Yfs∗ 1.5 − − S ID = 1A, VDS = 10V Input capacitance Ciss − 160 − pF VDS = 10V Output capacitance Coss − 85 − pF VGS = 0V Reverse transfer capacitance Crss − 25 − pF f = 1MHz Turn-on delay time td(on) − 20 − ns ID = 1A, VDD tr − 50 − ns VGS = 4V td(off) − 120 − ns RL = 30Ω tf − 70 − ns RG = 10Ω Rise time Turn-off delay time Fall time ∗ Pw ≤ 300µs, Duty cycle ≤ 1% Source ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. IGSS Zero gate voltage drain current (1) Gate (2) Drain (3) Source Abbreviated symbol : KE W Symbol Drain-source breakdown voltage 0.4+0.1 −0.05 0.4±0.1 1.5±0.1 Gate !Electrical characteristics (Ta = 25°C) Parameter (3) 0.5±0.1 Drain ∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 When mounted on a 40 × 40 × 0.7 mm alumina board. Gate-source leakage (2) !Internal equivalent circuit !Absolute maximum ratings (Ta = 25°C) Gate-source voltage 0.4±0.1 1.5±0.1 3.0±0.2 ROHM : MPT3 E I A J : SC-62 Drain-source voltage 1.5±0.1 1.6±0.1 (1) !Structure Silicon N-channel MOS FET transistor Parameter 4.5+0.2 −0.1 0.5±0.1 !Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. Test Conditions VGS = ±20V, VDS = 0V 30V 2SK3065 Transistors !Packaging specifications Package Type Taping Code T100 Basic ordering unit (pieces) 1000 2SK3065 !Electrical characteristic curves 10 2 1 1 Pw=10ms 0.1 DC OPERATION 0.01 2V 1 Ta=25°C Single Pulsed 25 50 75 100 125 150 0.001 0.1 175 GATE THRESHOLD VOLTAGE : VGS(th)(V) VDS=10V Pulsed Ta=−25°C 25°C 75°C 125°C 1 0.1 0 1 2 3 4 5 GATE THRESHOLD VOLTAGE : VGS(th)(V) Fig.4 Typical Transfer Characteristics 0 0 100 4 Fig.3 2 10mA 1 ID=1mA 0 −50 −25 0 25 50 75 100 125 CHANNEL TEMPERATURE : Tch(°C) Fig.5 Gate Threshold Voltage vs. Channel Temperature 150 10 Typical Output Characteristics 10 VDS=10V 3 5 DRAIN-SOURCE VOLTAGE : VDS(V) Fig.2 Maximum Safe Operating Area Total Power Dissipation vs. Case Temperature 10 10 DRAIN-SOURCE VOLTAGE : VDS(V) AMBIENT TEMPERATURE : Ta(°C) Fig.1 VGS=1.5V 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω) 0 0 DRAIN CURRENT : ID(A) Ta=25°C Pulsed 4V 3.5V 3V 2.5V 1ms DRAIN CURRENT : ID(A) When mounted on a 40 x 40 x 0.7 mm aluminum-ceramic board. 2 100µs Operating in this area is limited by RDS(on) DRAIN CURRENT : ID(A) TOTAL POWER DISSIPATION : PD(W) 3 VGS=4V Pulsed Ta=125°C 75°C 25°C −25°C 1 0.1 0.01 0.1 1 DRAIN CURRENT : ID(A) Fig.6 Static Drain-Source OnState Resistance vs. Drain Current(Ι) 10 2SK3065 Transistors Ta=125°C 75°C 25°C −25°C 1 0.1 2A 0.5 ID=1A 0.25 0 0 10 5 REVERSE DRAIN CURRENT : IDR(A) FORWARD TRANSFER ADMITTANCE : | Yfs |(S) Ta=−25°C 25°C 125°C 75°C 1 1 0.1 0.4 Fig.11 0.8 1.2 Ciss 100 Coss Crss 10 100 VDD 30V VGS=4V RG=10Ω Ta=25°C Pulsed td(off) 100 tf tr 10 0.1 DRAIN-SOURCE VOLTAGE : VSD(V) Fig.13 Typical Capacitance vs. Drain-Source Voltage 1 10 DRAIN CURRENT : ID(A) Fig.14 50 75 100 125 150 Static Drain-Source OnState Resistance vs. Channel Temperature 4V 1 VGS=0V 0.1 0.4 0.8 1.2 1.6 SOURCE-DRAIN VOLTAGE : VSD(V) td(on) 1 0 25 Ta=25°C Pulsed 0.01 0 1.6 Fig.12 Reverse Drain Current vs. Source-Drain Voltage(Ι) 1000 SWITCHING TIME : t(ns) CAPACITANCE : C(pF) Ta=125°C 75°C 25°C −25°C 0.1 0 10 SOURCE-DRAIN VOLTAGE : VSD(V) VGS=0V f=1MHZ Ta=25°C 10 Fig.9 VGS=4V Pulsed 0.01 0 10 Forward Trasfer Admitance vs. Drain Current 1000 ID=1A CHANNEL TEMPERATURE : Tch(°C) 1 DRAIN CURRENT : ID(A) Fig.10 2A 0 −50 −25 20 Static Drain-Source OnState Resistance vs. Gate-Source Voltage 10 VDS=10V Pulsed 0.1 0.01 Fig.8 Static Drain-Source OnState Resistance vs. Drain Current(ΙΙ) 10 15 VGS=4V Pulsed 0.5 GATE-SOURCE VOLTAGE : VGS(V) DRAIN CURRENT : ID(A) Fig.7 10 REVERSE DRAIN CURRENT : IDR(A) 0.1 0.01 0.75 1 Switching Characteristics (a measurement circuit diagram Fig.17 , it refers 18 times) Reverse Drain Current vs. Source-Drain Voltage(ΙΙ) 1000 REVERSE RECOVERY TIME : trr(ns) 1 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω) 1 VGS=2.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)(Ω) 10 di/dt=50A/µs VGS=0V Ta=25°C Pulsed 100 10 0.1 1 REVERSE DRAIN CURRENT : IDR(A) Fig.15 Reverse Recovery Time vs. Reverse Drain Current 10 2SK3065 Transistors NORMALIZED TRANSIENT THERMAL RESISTANCE : r(t) 10 D=1 1 0.5 0.2 0.1 0.1 0.05 0.02 When mounted on a 40 x 40 x 0.7 mm aluminum-ceramic board. 0.01 Ta=25°C θth (ch-c) (t) = r (t) • θth (ch-c) θth (ch-c) =62.5°C/W 0.01 Single pulse PW T 0.001 100µ 1m 10m 100m 1 D= PW T 10 100 PULSE WIDTH : PW(s) Fig.16 Normarized Transient Thermal Resistance vs. Pulse Width !Switching characteristics measurement circuit Pulse width VGS RG ID D.U.T. VDS VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% tr td(on) ton Fig.17 Switching Time Test Circuit td(off) tf toff Fig.18 Switching Time Waveforms