KTC4375 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V 1.5 A Collector Current-Continuous IC Collector Power Disspation PC 0.5 W Junction Temperature TJ 150 ˚C Storage Temperature Tstg -55 to 150 ˚C WEITRON http://www.weitron.com.tw 1/3 04-Feb-09 KTC4375 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC=1mA,IE=0 BVCBO 30 - - V Collector-Emitter Breakdown Voltage IC=10mA,IB=0 BVCEO 30 - - V Emitter-Base Breakdown Voltage IC=0,IE=1mA BVEBO 5 - - V IE=0,VCB=30V ICBO - - 0.1 µA IC=0,VEB=5V IEBO - - 0.1 µA DC Current Gain IC=0.5A,VCE=2V hFE(1) 100 - 320 - Collector-Emitter Saturation Voltage IC=1.5A, IB =30mA VCE(sat) - - 2 V Collector-Emitter Saturation Voltage IC=0.5A, VCE =2V VBE(sat) - - 1 V fT - 120 - MHz Cob - - 40 pF ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Transition Frequency IC=0.5A,VCE=2V Collector Output Capacitance IE=0,VCB=10V,f=1MHz CLASSIFICATION OF hFE(1) Rank O Y Range 100-200 160-320 Marking GO GY WEITRON http://www.weitron.com.tw 2/3 04-Feb-09 KTC4375 SOT-89 Outline Dimensions unit:mm SOT-89 Dim E G A H C J B K A B C D E G H J K L D L WEITRON http://www.weitron.com.tw 3/3 Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 04-Feb-09