KTA1663 PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -1.5 A Collector Power Dissipation PD 0.5 W Junction Temperature Tj -55 to +150 ˚C Tstg -55 to +150 ˚C Rating Storage Temperature Range ELECTRICAL CHARACTERISTICS(TA=25˚C unless otherwise noted) Parameter Unit -35 - - V BVCEO -30 - - V BVEBO -5 - - V ICBO - - -0.1 µA IEBO - - -0.1 µA BVCBO Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IE=-1mA, I C =0 Collector Cutoff Current VCB=-30V, IE=0 Collector Cutoff Current VEB =-5V, IC=0 http://www.weitron.com.tw Max Min Collector-Base Breakdown Voltage IC=-1mA, I E=0 WEITRON Typ Symbol 1/3 14-Jul-06 KTA1663 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Symbol Min Typ Max Unit hFE 100 - 320 - Collector-Emitter Saturation Voltage IC=-1.5A, I B=-30mA VCE(sat) - - -0.2 V Base-Emitter Saturation Voltage VCE=-2V, I C =-500mA VBE(sat) - - -1.0 V fT 80 - - MHz Cob - - 50 pF Characteristic ON CHARACTERISTICS DC Current Gain VCE=-2V, I C =-500mA DYNAMIC CHARACTERISTICS Transition Frequency VCE=-5V, IC =-50mA Output Capacitance VCB=-10V, IE=0, f=1MHz CLASSIFICATION OF hFE Rank O Y Range 100-200 160-320 HO HY Marking WEITRON http://www.weitron.com.tw 2/3 14-Jul-06 KTA1663 SOT-89 Outline Dimensions Dim E G H B K A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 3/3 SOT-89 Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500 TYP 2.900 3.100 14-Jul-06