KTA1664 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 1.0 A Collector Power Dissipation PD 0.5 W Junction Temperature Tj -55 to +150 ˚C Tstg -55 to +150 ˚C Rating Storage Temperature Range ELECTRICAL CHARACTERISTICS(TA=25˚C unless otherwise noted) Parameter Unit 40 - - V BVCEO 32 - - V BVEBO 5 - - V ICBO - - 0.5 µA IEBO - - 0.5 µA BVCBO Collector-Emitter Breakdown Voltage IC=1mA, I B=0 Emitter-Base Breakdown Voltage IE=50µA, I C =0 Collector Cutoff Current VCB=20V, I E=0 Collector Cutoff Current VEB =4V, I C=0 http://www.weitron.com.tw Max Min Collector-Base Breakdown Voltage IC=50µA, I E=0 WEITRON Typ Symbol 1/3 11-Dec-08 KTA1664 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit hFE 82 - 390 - VCE(sat) - - 0.4 V fT - 150 - MHz Cob - 15 - pF ON CHARACTERISTICS DC Current Gain VCE=3V, I C =100mA Collector-Emitter Saturation Voltage IC=0.5A, I B=50mA DYNAMIC CHARACTERISTICS Transition Frequency VCE=5V, I C =50mA f=100MHz Output Capacitance VCB=10V, I E=0, f=1MHz CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 DAP DAQ DAR Marking WEITRON http://www.weitron.com.tw 2/3 11-Dec-08 KTA1664 SOT-89 Outline Dimensions unit:mm SOT-89 Dim E G A H C J B K A B C D E G H J K L D L WEITRON http://www.weitron.com.tw 3/3 Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500 TYP 2.900 3.100 11-Dec-08