2SD313 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE 1 2 3 1. BASE 2. COLLECTOR 3. EMITTER 3 EMITTER TO-220 Symbol Value Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Collector to Base Voltage VEBO 5.0 V IC 3.0 A PD 1.75 30 0.24 W/˚C Collector Current Total Device Disspation TA=25°C TC=25°C Derate above 25°C W Junction Temperature TJ +150 ˚C Storage Temperature Tstg -55 to +150 ˚C ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=100µA, I E =0 Collector-Emitter Breakdown Voltage IC=1mA, I B =0 Emitter-Base Breakdown Voltage IE=100µA, I C =0 Collector Cut-Off Current VCB=60V, I E=0 Emitter-Cut-Off Current VEB=60V,IE=0 Symbol Min Max Max Unit BVCBO 60 - - V BVCEO 60 - - V BVEBO 5.0 - - V ICBO - - 100 µA ICEO - - 1.0 mA IEBO - - 100 µA Emitter-Cut-Off Current VEB=4.0V, IC =0 WEITRON http://www.weitron.com.tw 1/4 06-Feb-07 2SD313 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit hFE1 hFE2 40 40 - 320 - - VCE(sat) - - 1.0 V VBE - - 1.5 V fT - 8 - MHz Cob - 65 - pF ON CHARACTERISTICS DC Current Gain VCE= 2V, IC= 1A VCE= 2V, IC= 0.1A Collector-Emitter Saturation Voltage IC= 2A, IB = 200mA Base-Emitter On Voltage VCE= 2V, I C = 1A Transition Frequency VCE= 5V, IC= 500mA Transition Frequency VCB= 10V, I E= 0 , f=1MHz CLASSIFICATION OF hFE(1) Rank C D E F Range 40-80 60-120 100-200 160-320 WEITRON http://www.weitron.com.tw 2/4 06-Feb-07 2SD313 Sa tu ration Vol ta ge, VCE (S AT) (mV) 1000 h FE 100 10 1 10 100 1000 10000 IC=10IB 1000 10000 100 10 10 100 1000 10000 Collector Current (mA) Collector Current (mA) Fig.2 Saturation Voltage vs Collector Current Fig.1 DC Current Gain 10000 10 Collecto r Current (A) VBE (S AT) (mA) I C=10IB 1000 100 0.1 10 100 1000 10000 1 Collector Current (mA) 10000 10 100 Collector to Emitter Voltage (V) Fig.3 VBE(sat) vs IC VB E(ON) (mV) 1 Fig.4 SOA VCE=2V 1000 100 10 100 1000 10000 Collector Current (mA) Fig.5 VBE(on) vs IC WEITRON http://www.weitron.com.tw 3/4 06-Feb-07 2SD313 TO-220 Outline Dimensions D C1 ∅ F unit:mm A Dim A A1 B B1 C C1 D E E1 G G1 F H L L1 H E1 E L B1 L1 A1 B G C G1 Φ WEITRON http://www.weitron.com.tw 4/4 TO-220 Min Max 4.67 4.47 2.82 2.52 0.91 0.71 1.37 1.17 0.53 0.31 1.37 1.17 10.31 10.01 8.90 8.50 12.06 12.446 2.54 TYP 4.98 5.18 2.89 2.59 0.30 0.00 13.4 13.8 3.96 3.56 3.93 3.73 06-Feb-07