2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 2 3 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Symbol Value Unit Collector to Base Voltage VCBO -30 V Collector to Emitter Voltage VCEO -20 V Collector to Base Voltage VEBO -6 V Collector Current IC -5 A Total Device Disspation TA = 25°C PD 1.0 W Junction Temperature Tj +150 ˚C Storage Temperature Tstg -55 to +150 ˚C Rating Device Marking 2SB1412 = B1412 WEITRON http://www.weitron.com.tw 1/4 28-Oct-05 2SB1412 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC=-50µA, IE=0 BVCBO -30 - - V Collector-Emitter Breakdown Voltage IC=-1.0mA, IB=0 BVCEO -20 - - V Emitter-Base Breakdown Voltage IE=-50µA, IC=0 BVEBO -6 - - V Collector Cut-Off Current VCB=-20V, IE=0 ICBO - - -500 nA Emitter-Cut-Off Current VEB=-5V, IC=0 IEBO - - -500 nA hFE 82 - 390 - - - -1.0 V ON CHARACTERISTICS DC Current Gain VCE=-2V, IC=-0.5A Collector-Emitter Saturation Voltage IC=-4A, IB=-0.1A VCE(sat) DYNAMIC CHARACTERISTICS Transition Frequency VCE=-6V, IE=-50mA, f=30MHz Output Capacitance VCB=-20V, IE=0, f=1.0MHz fT - 120 - MHz Cob - 60 - pF CLASSIFICATION OF hFE Rank P Q R Range 82 - 180 120 - 270 180 - 390 WEITRON http://www.weitron.com.tw 2/4 28-Oct-05 2SB1412 5k 5k TA=25°C 1k 500 200 100 −2V −1V 50 20 10 1k 500 200 100 20 5 −5 −10 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC(A) Fig.2 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −5 TA=25°C −2 −1 −0.5 −0.2 IC/IB=50/1 40/1 /1 30/1 10/1 −0.1 −0.05 −0.02 −0.01 −2m −5m −0.01 -0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC(A) −25°C −1 25°C −0.5 −0.2 −0.1 −0.05 Ta=100°C −0.02 −0.01 −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (A) 20 −5 −10 −20 ∗ 20 10 5 2 1 500m DC 200m 100m 50m 20m 10m −50 s 0m =1 Pw ms 00 =1 Pw 50 −2 −5 −10 Ta=25°C Single nonrepetitive pulse 50 100 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : -VCE(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.5 Collector output capacitance vs. collector-base voltage WEITRON −2 100 200 http://www.weitron.com.tw lC/lB=40 Fig.4 Collector-emitter saturation voltage vs. collector current TA=25°C f=1MHz IE=0A 500 10 −0.1 −0.2 −0.5 −1 −5 COLLECTOR CURRENT : IC(A) Fig.3 Collector-emitter saturation voltage vs. collector current 1000 −5 −10 COLLECTOR CURRENT : IC(A) Fig.1 DC current gain vs collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=100°C 25°C −25°C 50 10 5 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) VCE= −2V 2k DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 2k Fig.6 Safe operation area F 3/4 28-Oct-05 2SB1412 TO-252 Outline Dimensions unit:mm TO-252 E A G 4 H Dim A B C D E G H J K L M J 1 2 3 B M K D C WEITRON http://www.weitron.com.tw L 4/4 Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 Max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 28-Oct-05