WEITRON WTM1624

WTM1624
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Description
SOT-89
The WTM1624 applies to voltage regulators,
relay drivers,lamp drivers,and electrical equipment.
Features
Adoption of FBET, MBIT processes
Low collector-to-emitter saturation voltage
Fast switching speed
Large current capacity and wide ASO
Absolute Maximum Ratings at TA = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse) (Note1)
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
ICP
PD
Ratings
+150
-55~+150
60
50
6
3
6
0.5
Unit
V
V
V
A
A
W
Note 1: Single pulse, PW=10ms
Electrical Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
tstg
tf
Min.
60
50
6
100
-
(Ta = 25 , unless otherwise stated)
Typ.
Max.
Unit
Test Conditions
V
IC=10uA , IE=0
V
IC=1mA, IB=0
V
IE=10uA ,IC=0
1
uA
VCB=40V, IE=0
1
uA
VEB=4V, IC=0
0.19
0.5
V
IC=2A, IB=100mA
0.94
1.2
V
IC=2A, IB=100mA
560
VCE=2V, IC=100mA
150
MHz
VCE=10V, IC=50mA
25
pF
VCB=10V, IE=0, f=1MHz
650
ns
See test circuit
35
ns
*Measured under pulse condition. Pulse widthfi380fls, Duty Cyclefi2%
Classification of h FE
Rank
Range
WEITRON
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R
100 - 200
S
140 - 280
T
200 - 400
1/4
U
280 - 560
28-Dec-07
WTM1624
Test Circuit(Unit: resistance:
, capacitance: F)
Characteristics Curve
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28-Dec-07
WTM1624
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28-Dec-07
WTM1624
SOT-89 Outline Dimensions
unit:mm
SOT-89
Dim
E
G
A
H
C
J
B
K
A
B
C
D
E
G
H
J
K
L
D
L
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Min
Max
1.600
1.400
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
3.100
2.900
28-Dec-07