KTC4379 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous IC 2.0 A Collector Power Disspation PC 0.5 W Junction Temperature TJ 150 ˚C Storage Temperature Tstg -55 to 150 ˚C WEITRON http://www.weitron.com.tw 1/5 05-Feb-09 KTC4379 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC=1mA,IE=0 BVCBO 50 - - V Collector-Emitter Breakdown Voltage IC=10mA,IB=0 BVCEO 50 - - V Emitter-Base Breakdown Voltage IC=0,IE=1mA BVEBO 5 - - V IE=0,VCB=50V ICBO - - 0.1 µA IC=0,VEB=5V IEBO - - 0.1 µA DC Current Gain IC=0.5A,VCE=2V IC=1.5A,VCE=2V hFE(1) hFE(2) 70 40 - 240 - - Collector-Emitter Saturation Voltage IC=1A, IB =50mA VCE(sat) - - 0.5 V Base-Emitter Saturation Voltage IC=1A, IB =50mA VBE(sat) - - 1.2 V ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Transition Frequency IC=50mA,VCE=2V fT - 120 - MHz Cob - 30 - pF Turn on Time t on - 0.1 - Storage Time tstg - 1.0 - Fall Time tf - 0.1 - Collector Output Capacitance IE=0,VCB=10V,f=1MHz Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A CLASSIFICATION OF hFE(1) Rank O Y Range 70-140 120-240 Marking UO UY WEITRON http://www.weitron.com.tw 2/5 05-Feb-09 KTC4379 Typical Characteristics WEITRON http://www.weitron.com.tw 3/5 05-Feb-09 KTC4379 WEITRON http://www.weitron.com.tw 4/5 05-Feb-09 KTC4379 SOT-89 Outline Dimensions Dim E G H B K A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 5/5 SOT-89 Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 05-Feb-09