WEITRON LB123T

LB123T
NPN Epitaxial Planar Transistors
1. EMITTER
2. COLLECTOR
3. BASE
P b Lead(Pb)-Free
1
2
3
TO-126
*High voltage, high speed power switch
*Switch regulators
*PWM inverter and Motor controls
*Solenoid and relay drivers
*Deflection circuits
a
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
600
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
8
V
Collector Current-Continuous
IC
1
A
Collector Power Disspation
PC
1.25
W
Junction Temperature
TJ
150
˚C
Storage Temperature
Tstg
-55 - 150
˚C
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10-Jul-07
LB123T
ELECTRICAL CHARACTERISTICS (Tamb =25°C unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC=1mA,IE=0
BVCBO
600
-
-
V
Collector-Emitter Breakdown Voltage
IC=10mA,IB=0
BVCEO
400
-
-
V
Emitter-Base Breakdown Voltage
IC=0,IE=1mA
BVEBO
8
-
-
V
Collector Cut-Off Current
IE=0,VCB=600V
ICBO
-
-
10
µA
Emitter-Cut-Off Current
IC=0,VEB=8V
IEBO
-
-
10
µA
hFE(1)
10
-
50
-
hFE(2)
hFE(3)
10
6
-
-
-
VCE(sat)
-
-
0.8
V
-
-
0.9
V
VBE(sat)
-
-
1.2
V
-
-
1.8
V
ON CHARACTERISTICS*
DC Current Gain*
IC=0.3A,VCE=5V
IC=0.5A,VCE=5V
IC=1A,VCE=5V
Collector-Emitter Saturation Voltage*
IC=100mA, IB=10mA
IC=300mA, IB=30mA
Base-emitter saturation voltage
IC=100mA, IB=10mA
IC=300mA, IB=30mA
*Pulse Test: Pluse Width ≤ 380µs, Duty Cycle ≤ 2%.
CLASSIFICATION OF hFE(1)
Rank
B1
B2
B3
B4
B5
B6
B7
B8
Range
10-17
13-22
18-27
23-32
28-37
33-42
38-47
43-50
WEITRON
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LB123T
Typical Characteristics
Fig.1 Current Gain - Collector Current
Fig.2 Saturation Voltage - Collector Current
Fig.3 On Voltage - Collector Current
Fig.4 Capacitance - Reverse-Biased Voltage
Fig.5 Switching Time - Collector Current
Fig.6 Safe Operating Area
WEITRON
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LB123T
TO-126 Outline Dimensions
G
TO-126
A
B
Dim
A
B
C
D
E
G
H
J
K
L
M
S
M
H
S
φ
unit:mm
L
D
C
J
E
K
φ
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MAX
Min
2.500
2.900
1.100
1.500
0.660
0.860
1.170
1.370
0.450
0.600
7.400
7.800
10.600
11.000
2.290TYP
4.480
4.680
15.300
15.700
2.100
2.300
3.900
4.100
3.200
3.000
10-Jul-07