2SC4548 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(TA=25ºC Unless Otherwise Noted) Rating Symbol Value Unit Collector to Base Voltage VCBO 400 V Collector to Emitter Voltage VCEO 400 V Emitter to Base Voltage VEBO 5 V Collector Current (DC) IC 200 mA Total Device Disspation TA=25°C PD 500 mW Junction Temperature Tj +150 ˚C Storage Temperature Tstg -55 to +150 ˚C WEITRON http://www.weitron.com.tw 1/3 03-Jun-10 2SC4548 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC=10µA, IE=0 BVCBO 400 - - V Collector-Emitter Breakdown Voltage IC=1mA, IB=0 BVCEO 400 - - V Emitter-Base Breakdown Voltage IE=10µA, IC=0 BVEBO 5.0 - - V Collector Cut-Off Current VCB=300V, IE =0 ICBO - - 0.1 µA Emitter-Cut-Off Current VEB=4V, I C=0 IEBO - - 0.1 µA hFE 60 - 200 - Collector-Emitter Saturation Voltage IC=50mA, IB =5mA VCE(sat) - - 0.6 V Base-Emitter Saturation Voltage IC=50mA, IB =5mA VBE(sat) - - 1.0 V Transition Frequency VCE=30V, IC =10mA fT - 70 - MHz Output Capacitance VCB=30V, IE =0, f=1MHz Cob - 4.0 - pF Turn-ON Time VCC=150V, I C=50mA, IB1=-IB2=5mA t on - 0.25 - µS Turn-OFF Time VCC=150V, I C=50mA, IB1=-IB2=5mA t off - 5.0 - µS ON CHARACTERISTICS DC Current Gain VCE=10V, IC =50mA DYNAMIC CHARACTERISTICS CLASSIFICATION OF hFE Rank D E Range 60-120 100-200 Marking WEITRON http://www.weitron.com.tw CN 2/3 03-Jun-10 2SC4548 SOT-89 Outline Dimensions Dim E G H B K A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 3/3 SOT-89 Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 03-Jun-10