PZT772 PNP Silicon Epitaxial Transistor COLLECTOR 2, 4 P b Lead(Pb)-Free 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR BASE 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating 1 Symbol Value Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Collector to Base Voltage VEBO -5.0 V Collector Current IC -3.0 A Total Device Disspation TA=25°C PD 1.5 W Junction Temperature Tj +150 ˚C Storage Temperature Tstg -55 to +150 ˚C Device Marking PZT772 = 772 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Max Unit Collector-Base Breakdown Voltage IC=-100µA, IE=0 BVCBO -40 - - V Collector-Emitter Breakdown Voltage IC=-10mA, IB =0 BVCEO -30 - - V Emitter-Base Breakdown Voltage IE=-10µA, IC=0 BVEBO -5.0 - - V Collector Cut-Off Current VCB=-30V, IE=0 ICBO - - -1.0 µA Emitter-Cut-Off Current VEB=-3V, IC=0 IEBO - - -1.0 µA WEITRON http://www.weitron.com.tw 1/4 07-Feb-07 PZT772 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Symbol Min Typ Max Unit hFE1 hFE2 30 100 160 500 - Collector-Emitter Saturation Voltage IC=-2A, I B=-0.2A VCE(sat) - -0.3 -0.5 V Base-Emitter On Voltage IC=-2A, I B=-0.2A VBE(sat) - -1.0 -2.0 V fT - 80 - MHz Cob - 55 - pF Characteristic ON CHARACTERISTICS(1) DC Current Gain VCE=-2V, IC=-20mA VCE=-2V, IC=-1A Transition Frequency VCE=-20V, IC=-20mA, f=100MHz Output Capacitance VCB=-10V, IE=0, f=1MHz Note 1.Pulse Test : Pulse width < 380µs, Duty cycle ≤ 2%. CLASSIFICATION of hFE2 Rank Q P E Range 100-200 160-320 250-500 WEITRON http://www.weitron.com.tw 2/4 07-Feb-07 PZT772 Typical Characteristics WEITRON http://www.weitron.com.tw 3/4 07-Feb-07 PZT772 SOT-223 Outline Dimensions unit:mm A F DIM 4 S B 1 2 3 D L G J C H WEITRON http://www.weitron.com.tw M K 4/4 A B C D F G H J K L M S MILLIMETERS MIN MAX 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 07-Feb-07