WINSEMI SFP634

SFP634
Silicon N-Channel MOSFET
Features
■ 9A, 250V, RDS(on)(Max 0.45Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 41nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
Thi s Po w e r MOS F ET is pr o du ce d usi n g Wi n se m i ’ s adv an ce d
planar stripe, DM OS technology. This latest technology has been
especi al ly designed to minim ize on- state resistance, have a high
ru gg e d ava l an ch e ch a ra cte r ist ic s. Thi s devi ce s is sp e cia l l y we ll
s u i t e d fo r l o w v o l t a g e a p p l i c a t i o n s s u c h a s a u t o m o t i v e , h i g h
efficiency switching for DC/DC converters, and DC motor control.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
250
V
Continuous Drain Current(@Tc=25℃)
9
A
Continuous Drain Current(@Tc=100℃)
5
A
72
A
±20
V
300
mJ
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
(Note 1)
7.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.8
V/ns
88
W
0.64
W/℃
-55~150
℃
300
℃
(Note 2)
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
TL
Junction and Storage Temperature
Channel Temperature
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
1.42
℃/W
RQCS
Thermal Resistance, Case-to-Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/W
1/7
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SFP634
C)
Electrical Characteristics (Tc = 25
25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS = ±20 V, VDS = 0 V
-
-
±100
nA
V(BR)GSS
IG = ±10 μA, VDS = 0 V
±20
-
-
V
IDSS
VDS = 200 V, VGS = 0 V
-
-
1
μA
Drain−source breakdown voltage
V(BR)DSS
ID = 250 μA, VGS = 0 V
250
-
-
V
Break Voltage Temperature
ΔBVDSS/
ID=250μA, Referenced to 25℃
-
0.37
-
V/℃
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Coefficient
ΔTJ
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
2
-
4
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 5.1A
-
-
0.45
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 5.1A
1.6
-
-
S
Input capacitance
Ciss
VDS = 25 V,
-
1220
-
Crss
VGS = 0 V,
-
130
-
Coss
f = 1 MHz
-
32
-
VDD =125 V,
-
9.6
-
ton
ID =5.6A
-
21
-
tf
RG=12Ω
-
42
-
-
19
-
-
41
51.8
-
6.5
-
-
22
-
Reverse transfer capacitance
Output capacitance
Rise time
tr
Turn−on time
Switching time
pF
ns
Fall time
Turn−off time
(Note4,5)
toff
Total gate charge (gate−source
VDD = 200 V,
Qg
plus gate−drain)
VGS = 10 V,
nC
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
ID = 5.6A
(Note4,5)
−Drain Ratings and Characteristics (Ta = 25
C)
Source
Source−
25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
8.1
A
Pulse drain reverse current
IDRP
-
-
-
32
A
Forward voltage (diode)
VDSF
IDR = 8.1 A, VGS = 0 V
-
1.4
2
V
Reverse recovery time
trr
IDR = 5.6 A, VGS = 0 V,
-
198
-
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
1.2
2.4
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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SFP634
3/7
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SFP634
4/7
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SFP634
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
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SFP634
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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SFP634
TO-220 Package Dimension
Unit:mm
7/7
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