WFF5N60 Silicon N-Channel MOSFET Features ■ 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced Planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS Value Units Drain Source Voltage Parameter 600 V Continuous Drain Current(@Tc=25℃) 4.5* A Continuous Drain Current(@Tc=100℃) 3.1* A 16* A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 240 mJ EAR Repetitive Avalanche Energy (Note 1) 10 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 33 W 0.26 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature Channel Temperature *Drain current limited by junction temperature Thermal Characteristics Symbol Parameter RQJC RQJA Value Units Min Typ Max Thermal Resistance, Junction-to-Case - - 3.79 ℃/W Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W 1/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved WFF5N60 C) Electrical Characteristics (Tc = 25 25°C) Characteristics Symbol Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V VDS = 600 V, VDS = 0 V - - 10 μA VDS = 480 V, Tc = 125℃ - - 100 μA Gate leakage current Gate−source breakdown voltage Test Condition Drain cut−off current IDSS Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 600 - - V Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 2.2A - 1.8 2.5 Ω Input capacitance Ciss VDS = 25 V, - 545 670 Reverse transfer capacitance Crss VGS = 0 V, - 70 90 Output capacitance Coss f = 1 MHz - 8 11 VDD =300 V, - 10 30 ton ID =4.4 A - 35 80 tf RG=25 Ω - 45 100 - 20 50 - 16 20 - 3.4 - - 7 - Rise time tr Turn−on time Switching time pF ns Fall time Turn−off time (Note4,5) toff Total gate charge (gate−source VDD = 480 V, Qg plus gate−drain) VGS = 10 V, Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 4.4 A (Note4,5) nC −Drain Ratings and Characteristics (Ta = 25 C) Source Source− 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 4.5 A Pulse drain reverse current IDRP - - - 17.6 A Forward voltage (diode) VDSF IDR = 4.4 A, VGS = 0 V - - 1.4 V Reverse recovery time Trr IDR = 4.4 A, VGS = 0 V, - 390 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 2.2 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH,IAS=4.4A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤4.5A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved WFF5N60 3/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved WFF5N60 4/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved WFF5N60 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved WFF5N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved WFF5N60 TO-220F Package Dimension Unit:mm 7/7 . Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved