WFW18N50
Silicon N-Channel MOSFET
Features
18A,500V,RDS(on)(Max0.265Ω)@VGS=10V
Ultra-low Gate charge(Typical 42nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Winsemi’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
Drain Source Voltage
500
V
Continuous Drain Current(@Tc=25℃)
18
A
Continuous Drain Current(@Tc=100℃)
12.7
A
80
A
±30
V
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
330
mJ
EAR
Repetitive Avalanche Energy
(Note1)
27.7
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
(Note1)
PD
Total Power Dissipation(@Tc=25℃)
280
W
TJ,Tstg
Junction and Storage Temperature
-55~150
℃
300
℃
TL
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.45
℃/W
RQCS
Thermal Resistance , Case-to-Sink
-
0.24
-
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
40
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
WFW18N50
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±25V,VDS=0V
-
-
±10
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
IDSS
VDS=500V,VGS=0V
-
-
100
µA
Drain -source breakdown voltage
V(BR)DSS
ID=10 mA,VGS=0V
500
-
-
V
Breakdown voltage Temperature
△BVDSS/
-
0.5
-
V/℃
Gate-source breakdown voltage
Drain cut -off current
coefficient
△TJ
ID=250µA,Referenced
to 25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250µA
3
-
5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=9A
-
0.27
0.40
Ω
Forward Transconductance
gfs
VDS=40V,ID=9A
-
16
-
S
Input capacitance
Ciss
VDS=25V,
-
2530
3290
Reverse transfer capacitance
Crss
VGS=0V,
-
11
14.3
Output capacitance
Coss
f=1MHz
-
300
390
VDD=250V,
-
40
90
ton
ID=18A
-
150
310
tf
RG=25Ω
-
95
200
-
110
230
-
42
55
-
12
-
-
14
-
Min
Type
Max
Unit
Rise time
Switching time
tr
Turn-on time
Fall time
Turn-off time
(Note4,5)
toff
Total gate charge(gate-source
Qg
plus gate-drain)
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
VDD=400V,
VGS=10V,
ID=18A
(Note4,5)
pF
ns
nC
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
18
A
Pulse drain reverse current
IDRP
-
-
-
80
A
Forward voltage(diode)
VDSF
IDR=18A,VGS=0V
-
-
-1.9
V
Reverse recovery time
trr
IDR=18A,VGS=0V,
-
1.6
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
20
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=1.83mH IAS=18A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤18A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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WFW18N50
Fig.1 On State Characteristics
Fig.2 Transfer Current Characteristics
Fig.4 Body Diode Forward Voltage
Variation with Source Current
and Temperature
Fig.3 On-Resistance Variation vs
Drain Current
Fig.5 Capacitance Characteristics
Fig.6 Gate Charge Characteristics
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WFW18N50
Fig.7 Breakdown Voltage Variation
Fig.9 Maximum Safe Operation Area
Fig.8 On-Resistance Variation
vs.Temperature
Fig.10 Maximum Drain Current vs
Case Temperature
Fig.11 Transient Thermal Response Curve
4/7
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WFW18N50
Fig.12 Gate Test Circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFW18N50
TO-3PN
Package Dimension
Unit:mm
7/7
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