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SFP2N6
SFP2N60
Silicon N-Channel MOSFET
Features
�
2A,600V,RDS(on)(Max4.7Ω)@VGS=10V
�
Ultra-low Gate Charge(Typical 9.0nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology. This latest Technology has been
especially designed to minimize on-state resistance , have a high
rugged avalanche characteristics .This devices is specially well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current (@Tc=25℃)
2.0
A
Continuous Drain Current (@Tc=100℃)
1.3
A
8
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
140
mJ
EAR
Repetitive Avalanche Energy
(Note1)
6.4
mJ
dv/dt
Peak diode Recovery dv/dt
Note3)
5.5
V/ns
54
W
0.43
W/℃
-55~150
℃
300
℃
Total Power Dissipation (@Tc=25℃)
PD
Derating Factor above25℃
TJ,Tstg
Junction and Storage Temperature
TL
Maximum lead Temperature for soldering purposes
Thermal Characteristics
Symbol
Parameter
RQJC
Thermal Resistance,Junction-to-Case
RQCS
Thermal Resistance,Case-to-Sink
RQJA
Thermal Resistance,Junction-to-Ambient
Value
units
Min
Typ
Max
-
-
2.3
℃/W
0.5
-
-
℃/W
-
-
62.5
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
0
SFP2N6
SFP2N60
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
Gate-source breakdown voltage
VBRGSS
IG=±10µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
Drain cut-off current
IDSS
VDS=480V,Tc=125℃
-
-
100
µA
600
-
-
V
ID=250µA,Referenced to 25℃
-
0.5
-
V/℃
Drain -source breakdown voltage
V(BR)DSS
ID=250µA,VGS=0V
Break Voltage Temperature
△BVDSS/
Coefficient
△TJ
Gate threshold voltage
VGS(th)
VDS=10V,ID=250µA
2
-
4
V
Drain-source ON resistance
RDS(ON)
VGS=10V,ID=1A
-
4.5
4.7
Ω
Forward Trans conductance
gfs
VDS=50V,ID=1A
-
2.25
-
S
Input capacitance
Ciss
VDS=25V,
-
280
330
Reverse transfer capacitance
Crss
VGS=0V,
-
45
55
Output capacitance
Coss
f=1MHz
-
4.5
7
Rise time
tr
VDD=300V,
-
10
28
Turn-on time
ton
ID=2A
-
25
55
Fall time
tf
RG=25Ω
-
20
60
Turn-off time
toff
-
25
60
-
9.0
12
-
1.7
-
-
4.5
-
Switching time
pF
ns
(Note4,5)
Total gate charge (gate-source
VDD=320V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller")Charge
Qgd
ID=2A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
2
A
Pulse drain reverse current
IDRP
-
-
-
8
A
Forward voltage(diode)
VDSF
IDR=2A,VGS=0V
-
-
1.4
V
Reverse recovery time
Trr
IDR=2A,VGS=0V,
-
180
-
ns
Reverse recovery charge
Qrr
dIDR / dt=100A / µs
-
0.72
-
µC
Note1.Repeativity rating: pulse width limited by junction temperature
2.L=18.5mH,IAS=2.0A,VDD=50V,RG=0Ω,Starting TJ=25℃
3. ISD≤2.0A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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SFP2N6
SFP2N60
Fig.1 On-State Characteristics
Fig.2 Transfer Current Characteristics
Fig.3 On-Resistance Variation vs
Fig.4 Body Diode Forward voltage Variation
Drain Current
vs.Source Current and Temperature
Fig.5 On-Resistance Variation vs
Fig.6 Gate Charge Characteristics
Junction temperature
3/7
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SFP2N6
SFP2N60
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case temperature
Fig.9 Transient Thermal Response Curve
4/7
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SFP2N6
SFP2N60
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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SFP2N6
SFP2N60
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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0
SFP2N6
SFP2N60
TO-220 Package Dimension
Unit:mm
7/7
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