WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=16A ■ Low on-state voltage: VTM=1.55V(Max.)@ IT=22.5A ■ High Commutation dV/dt. General Description General purpose swiTJhing and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol Parameter VDRM /VPRM Peak Repetitive Forward Blocking Voltage(gate open) IT(RMS) Forward Current RMS (All Conduction Angles, TJ=58℃) ITSM Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz) I2t Circuit Fusing Considerations (tp= 10 ms) PGM PG(AV) Units 600 V 16 A 160/168 A 144 A2s Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us) 5 W Average Gate Power — Forward, (Over any 20ms period) 1 W 50 A/μs IFGM Critical rate of rise of on-state current TJ=125℃ ITM = 20A; IG = 200mA; dIG/dt = 200mA/µs Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS) VRGM Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS) TJ, Tstg dI/dt Value (Note 1) 4 A 10 V Junction Temperature -40~125 ℃ Storage Temperature -40~150 ℃ Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may swiTJh to the on-state. The rate of rise of current should not exceed 15A/us. Thermal Characteristics Symbol Parameter Min Value Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 1.6 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 60 ℃/W Rev. B Nov.2008 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. T01-3 WTPB16A60SW 8 Electrical Characteristics (TJ = 25°C unless otherwise specified) Characteristics Symbol IDRM//IRRM VTM VGT Typ. Max Unit Peak Forward or Reverse Blocking Current TJ=25℃ - - 5 μA (VDRM=VRRM,) TJ=125℃ - - 1 mA - - 1.55 V T2+G+ - - 10 T2+G- - - 10 T2-G- - - 10 T2+G+ - - 1.2 T2+G- - - 1.2 T2-G- - - 1.2 Forward “On” Voltage (Note2) (ITM = 22.5A tp=380μs) Gate Trigger Current (Continuous dc) IGT Min (VD = 12 Vdc, RL = 33 Ω) Gate Trigger Voltage (Continuous dc) (VD =12 Vdc, RL = 33 Ω) mA V VGD Gate threshold voltage( VD= VDRM,RL = 3.3 KΩ,TJ=125℃,) 0.2 - - V dV/dt Critical rate of rise of commutation Voltage (VD=0.67VDRM) 40 - - V/μs - - 15 mA T2+G+ - - 25 T2+G- - - 30 T2-G- - - 25 - - 25 IH Holding Current (IT= 100 mA) Latching current IL Rd (VD =12 Vdc,IGT=0.1A) Dynamic resistance Note 2. Forward current applied for 1 ms maximum duration, duty cycle 2/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. mA mΩ WTPB16A60SW 1 Fig. Fig.1 3 Fig. Fig.3 5 Fig. Fig.5 2 Fig. Fig.2 4 Fig. Fig.4 6 Fig. Fig.6 3/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WTPB16A60SW 8 7 Fig. Fig.7 8 Fig. Fig.8 9 Fig. Fig.9 10 Gate Trigger Characteristics Test Circuit Fig. Fig.1 4/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WTPB16A60SW 220 Package Dimension TOTO-220 Unit: mm 5/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.