Key Parameters VRRM = 2600 IFAVM = 1020 IFSM = 11.5 VF0 = 0.87 rF = 0.39 Avalanche Rectifier Diode V A kA V mΩ Ω 5SDA 09D2604 Doc. No. 5SYA 1121 - 01 Apr-98 Features • • • • • Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing Blocking Part number 5SDA 09D2604 5SDA 09D2304 5SDA 09D2004 Condition VRRM 2600 2300 2000 f = 50 Hz tP = 10 ms VRSM 2860 2530 2200 tP = 10 ms Tj = 160°C IRRM ≤ 50 mA VRRM Tj = 160°C PRSM ≤ 70 kW tP = 20 µs Tj = ≤ 50 kW tP = 20 µs Tj = 160°C Mechanical data FM a Mounting force min. 10 kN max. 12 kN m Acceleration Device unclamped Device clamped Weight DS Surface creepage distance Da Air strike distance 2 50 m/s 2 200 m/s 0.25 kg 30 mm 20.5 mm ABB Semiconductors AG 45°C ABB Semiconductors AG 5SDA 09D2604 On-state IFAVM Max. average on-state current 1020 A IFRMS Max. RMS on-state current 1600 A IFSM Max. peak non-repetitive 11.5 kA tp = 10 ms Tj = surge current 12.5 kA tp = 8.3 ms After surge: 2 tp = 10 ms VD = VR = 0V 2 650⋅103 A s tp = 8.3 ms IF = 1000 - 3000 A Tj = 160°C IF = Tj = 25°C 2 It 3 Limiting load integral Half sine wave, TC = 85°C 660⋅10 A s VF0 Threshold voltage 0.87 V rF Slope resistance 0.39 mΩ VF min On-state voltage 1.35 V VF max On-state voltage 1.50 V 1800 A 160°C Thermal Tj Storage and operating -40...160°C junction temperature range RthJC RthCH Thermal resistance 80 K/kW Anode side cooled junction to case 80 K/kW Cathode side cooled 40 K/kW Double side cooled 16 K/kW Single side cooled 8 K/kW Double side cooled Thermal resistance case to heat sink 45 Analytical function for transient thermal impedance: 4 ∑ R (1- e ZthJC(t) = i -t/τ i ) 40 Fm =10...12 kN Zth 35 Double Side Cooling [K/kW] 30 25 i =1 20 15 i 1 2 3 4 10 R (K/kW) 20.95 10.57 7.15 1.33 5 τi (s) 0.396 0.072 0.009 0.0044 For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows: IFAVM = where P= -VF0 + 2 (VF0)2 + 4 * f * rf * P 2 * f 2 * rf TJ max - TC Rthjc or P= TJ max - TA Rthja 0 10-3 IFAVM (A) T max (°C) Rthja (K/kW) 2 f = 1 2.5 3.1 6 2 3 4 5 67 10-2 2 3 4 5 67 P (W) Tc (°C) RthJC (K/kW) 10-1 t [s] 2 3 4 5 56 VF0 (V) Ta (°C) 100 2 3 4 5 67 101 rF (Ω) for DC current for half-sine wave for 120°el., sine for 60° el., sine Doc. No. 5SYA 1121 - 01 Apr-98 ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306