MICROSEMI 2N6802

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
DEVICES
LEVELS
2N6802
2N6802U
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
500
Vdc
Gate – Source Voltage
VGS
± 20
Vdc
ID1
2.5
Adc
ID2
1.5
Adc
Continuous Drain Current
TC = +25°C
Continuous Drain Current
TC = +100°C
Max. Power Dissipation
(1)
W
Rds(on)
1.5 (2)
Ω
Top, Tstg
-55 to +150
°C
Ptl
Drain to Source On State Resistance
Operating & Storage Temperature
25
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 1.5A
TO-205AF
(formerly TO-39)
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
500
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
IDSS1
IDSS2
25
0.25
µAdc
mAdc
rDS(on)1
rDS(on)2
1.50
1.60
Ω
Ω
rDS(on)3
3.50
Ω
VSD
1.4
Vdc
OFF CHARACTERTICS
Drain Current
VGS = 0V, VDS = 400V
VGS = 0V, VDS = 400V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = 10V, ID = 1.5A pulsed
VGS = 10V, ID = 2.5A pulsed
Tj = +125°C
VGS = 10V, ID = 1.5A pulsed
Diode Forward Voltage
VGS = 0V, ID = 2.5A pulsed
T4-LDS-0149 Rev. 1 (092063)
Vdc
4.0
Vdc
5.0
U – 18 LCC
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
VGS = 10V, ID = 2.5A
VDS = 250V
Min.
Qg(on)
Qgs
Qgd
Max.
33.00
4.46
28.11
Unit
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 2.5A, VGS = 10Vdc,
Gate drive impedance = 7.5Ω,
VDD = 225Vdc
Diode Reverse Recovery Time
di/dt ≤ 100A/µs, VDD ≤ 50V,
IF = 2.5A
T4-LDS-0149 Rev. 1 (092063)
Min.
Max.
td(on)
tr
td(off)
tf
30
30
55
30
trr
900
Unit
ns
ns
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
PACKAGE DIMENSIONS
Ltr
Dimensions
Inches
Millimeters
Min
Max
Min
Max
CD
.305
.355
7.75
9.02
CH
.160
.180
4.07
4.57
HD
.335
.370
8.51
9.39
h
J
k
LD
LL
LS
LU
L1
.009
.041
.028
.034
.029
.045
.016
.021
.500
.750
.200 TP
.016
.019
.050
0.23
1.04
0.72
0.86
0.74
1.14
0.41
0.53
12.7
19.05
5.08 TP
0.41
0.48
1.27
2
3
7, 8
7, 8
6
7, 8
7, 8
L2
.250
6.35
7, 8
P
.070
1.78
5
Q
.050
r
α
.010
45° TP
Notes
1.27
4
0.25
9
45° TP
6
NOTES:
1
2
3
4
5
Dimensions are in inches. Millimeters are given for general information only.
Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm).
Dimension k measured from maximum HD.
Outline in this zone is not controlled.
Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
6 LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
7 All three leads.
8 Radius (r) applies to both inside corners of tab.
9 Drain is electrically connected to the case.
10 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 1. Physical dimensions for TO-205AF.
T4-LDS-0149 Rev. 1 (092063)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 In accordance with ASME Y14.5M, diameters are equivalent to
φx symbology.
4 Ceramic package only.
Ltr
BL
BW
CH
LL1
LL2
LS
LS1
LS2
LW
Q1
Q2
Q3
TL
TW
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.345
.360
8.77
.280
.295
7.11
.095
.115
2.41
.040
.055
1.02
.055
.065
1.40
.050 BSC
1.27 BSC
.025 BSC
0.635 BSC
.008 BSC
0.203 BSC
.020
.030
0.51
0.76
.105 REF
2.67 REF
.120 REF
3.05 REF
.045
.055
1.14
1.40
.070
.080
1.78
2.03
.120
.130
3.05
3.30
* FIGURE 2. Physical dimensions for LCC.
T4-LDS-0149 Rev. 1 (092063)
Page 4 of 4