MICROSEMI APTC90DAM60T1G

APTC90DAM60T1G
Boost chopper
Super Junction MOSFET
VDSS = 900V
RDSon = 60mΩ max @ Tj = 25°C
ID = 59A @ Tc = 25°C
Power Module
5
6
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
11
CR1
3
4
Q2
Features
•
NTC
9
10
1
2
•
•
•
•
12
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
900
59
44
150
±20
60
462
8.8
2.9
1940
Unit
V
A
August, 2009
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–5
APTC90DAM60T1G – Rev 0
Symbol
VDSS
APTC90DAM60T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 900V
VGS = 0V,VDS = 900V
Min
Typ
2.5
1000
50
3
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 52A
VGS = VDS, ID = 6mA
VGS = ±20 V, VDS = 0V
Max
200
Unit
60
3.5
200
mΩ
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 100V
f = 1MHz
Min
Typ
13.6
0.66
nF
540
VGS = 10V
VBus = 400V
ID = 52A
nC
64
230
70
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 52A
RG = 3.8Ω
20
ns
400
25
3
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8Ω
mJ
1.5
4.2
mJ
1.7
Chopper diode ratings and characteristics
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VR=1000V
IF = 60A
IF = 120A
IF = 60A
IF = 60A
VR = 667V
di/dt =200A/µs
www.microsemi.com
Min
1000
Tj = 25°C
Tj = 125°C
Tc = 80°C
Typ
Max
100
500
Tj = 125°C
Tj = 25°C
60
2.2
2.8
1.8
235
Tj = 125°C
305
Tj = 25°C
460
Tj = 125°C
2600
Unit
V
µA
A
2.8
V
ns
August, 2009
IRM
Test Conditions
nC
2–5
APTC90DAM60T1G – Rev 0
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTC90DAM60T1G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
CoolMOS
diode
To heatsink
M4
4000
-40
-40
-40
2.5
Max
0.27
0.9
Unit
°C/W
V
150
125
100
4.7
80
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
R25
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
− ⎟⎟⎥
exp ⎢ B25 / 85 ⎜⎜
⎝ T25 T ⎠⎦
⎣
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–5
APTC90DAM60T1G – Rev 0
August, 2009
SP1 Package outline (dimensions in mm)
APTC90DAM60T1G
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.3
0.9
0.25
0.7
0.2
0.15
0.5
0.1
0.3
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
6V
160
5V
80
0
0
5
10
15
VDS, Drain to Source Voltage (V)
20
Maximum Safe Operating Area
10 ms
ID, DC Drain Current (A)
925
900
25
75
100
125
50
40
30
20
10
1
0
1
10
100
1000
25
VDS, Drain to Source Voltage (V)
Ciss
10000
Coss
1000
100
Crss
10
1
0
50
75
100
125
TC, Case Temperature (°C)
150
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
50
10
25 50 75 100 125 150 175 200
VDS, Drain to Source Voltage (V)
www.microsemi.com
VDS=400V
ID=52A
TJ=25°C
8
August, 2009
ID, Drain Current (A)
100 µs
Single pulse
TJ=150°C
TC=25°C
950
DC Drain Current vs Case Temperature
60
limited by RDSon
10
975
TJ, Junction Temperature (°C)
1000
100
1000
6
4
2
0
0
100
200 300 400
Gate Charge (nC)
500
600
4–5
APTC90DAM60T1G – Rev 0
ID, Drain Current (A)
VGS=20, 8V
BVDSS, Drain to Source Breakdown
Voltage
Breakdown Voltage vs Temperature
240
APTC90DAM60T1G
VDS=600V
D=50%
RG=3.8Ω
TJ=125°C
TC=75°C
300
200
Hard
switching
100
ZCS
0
20
25
30
35
40
45
50
3.0
2.5
2.0
1.5
1.0
0.5
25
6
100
125
150
7
Switching Energy (mJ)
Eon
4
Eoff
2
0
6
Eon
5
Eoff
4
3
VDS=600V
ID=52A
TJ=125°C
L=100µH
2
1
0
10
20
30
40
50
60
ID, Drain Current (A)
70
80
0
5
10
15
20
Gate Resistance (Ohms)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5–5
August, 2009
Eon and Eoff (mJ)
VDS=600V
RG=3.8Ω
TJ=125°C
L=100µH
75
Switching Energy vs Gate Resistance
Switching Energy vs Current
8
50
TJ, Junction Temperature (°C)
ID, Drain Current (A)
APTC90DAM60T1G – Rev 0
Frequency (kHz)
ZVS
ON resistance vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
Operating Frequency vs Drain Current
400