APTC90DAM60T1G Boost chopper Super Junction MOSFET VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Power Module 5 6 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 11 CR1 3 4 Q2 Features • NTC 9 10 1 2 • • • • 12 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 900 59 44 150 ±20 60 462 8.8 2.9 1940 Unit V A August, 2009 ID Parameter Drain - Source Breakdown Voltage V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTC90DAM60T1G – Rev 0 Symbol VDSS APTC90DAM60T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Typ 2.5 1000 50 3 Tj = 25°C Tj = 125°C VGS = 10V, ID = 52A VGS = VDS, ID = 6mA VGS = ±20 V, VDS = 0V Max 200 Unit 60 3.5 200 mΩ V nA Max Unit µA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min Typ 13.6 0.66 nF 540 VGS = 10V VBus = 400V ID = 52A nC 64 230 70 Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 52A RG = 3.8Ω 20 ns 400 25 3 Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω mJ 1.5 4.2 mJ 1.7 Chopper diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=1000V IF = 60A IF = 120A IF = 60A IF = 60A VR = 667V di/dt =200A/µs www.microsemi.com Min 1000 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 100 500 Tj = 125°C Tj = 25°C 60 2.2 2.8 1.8 235 Tj = 125°C 305 Tj = 25°C 460 Tj = 125°C 2600 Unit V µA A 2.8 V ns August, 2009 IRM Test Conditions nC 2–5 APTC90DAM60T1G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTC90DAM60T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ CoolMOS diode To heatsink M4 4000 -40 -40 -40 2.5 Max 0.27 0.9 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = Typ 50 5 3952 4 Max Unit kΩ % K % R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦ ⎣ See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTC90DAM60T1G – Rev 0 August, 2009 SP1 Package outline (dimensions in mm) APTC90DAM60T1G Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.15 0.5 0.1 0.3 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 160 5V 80 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 Maximum Safe Operating Area 10 ms ID, DC Drain Current (A) 925 900 25 75 100 125 50 40 30 20 10 1 0 1 10 100 1000 25 VDS, Drain to Source Voltage (V) Ciss 10000 Coss 1000 100 Crss 10 1 0 50 75 100 125 TC, Case Temperature (°C) 150 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 50 10 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com VDS=400V ID=52A TJ=25°C 8 August, 2009 ID, Drain Current (A) 100 µs Single pulse TJ=150°C TC=25°C 950 DC Drain Current vs Case Temperature 60 limited by RDSon 10 975 TJ, Junction Temperature (°C) 1000 100 1000 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 4–5 APTC90DAM60T1G – Rev 0 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 240 APTC90DAM60T1G VDS=600V D=50% RG=3.8Ω TJ=125°C TC=75°C 300 200 Hard switching 100 ZCS 0 20 25 30 35 40 45 50 3.0 2.5 2.0 1.5 1.0 0.5 25 6 100 125 150 7 Switching Energy (mJ) Eon 4 Eoff 2 0 6 Eon 5 Eoff 4 3 VDS=600V ID=52A TJ=125°C L=100µH 2 1 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 5 10 15 20 Gate Resistance (Ohms) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 August, 2009 Eon and Eoff (mJ) VDS=600V RG=3.8Ω TJ=125°C L=100µH 75 Switching Energy vs Gate Resistance Switching Energy vs Current 8 50 TJ, Junction Temperature (°C) ID, Drain Current (A) APTC90DAM60T1G – Rev 0 Frequency (kHz) ZVS ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) Operating Frequency vs Drain Current 400