APTC60TAM24TPG Triple phase leg Super Junction MOSFET Power Module VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • • • • • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTC60TAM24TPG – Rev 0 August, 2009 NTC1 NTC2 Benefits • Outstanding performance at high frequency operation VBUS 1 VBUS 2 VBUS 3 • Direct mounting to heatsink (isolated package) G1 G3 G5 • Low junction to case thermal resistance S1 S3 S5 0/VBUS 2 0/VBUS 3 0/VBUS 1 • Solderable terminals both for power and signal for S6 S4 S2 easy PCB mounting G6 G4 G2 • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase U V W leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge • RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 95 ID Continuous Drain Current A Tc = 80°C 70 IDM Pulsed Drain current 260 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 24 mΩ PD Maximum Power Dissipation Tc = 25°C 462 W IAR Avalanche current (repetitive and non repetitive) 15 A EAR Repetitive Avalanche Energy 3 mJ EAS Single Pulse Avalanche Energy 1900 APTC60TAM24TPG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ Tj = 25°C Tj = 125°C VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 14.4 17 Max 350 600 24 3.9 200 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz nF 300 VGS = 10V VBus = 300V ID = 95A nC 68 102 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 95A RG = 2.5Ω 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω 1350 µJ 1040 2200 µJ 1270 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25°C Tc = 80°C Typ 95 70 VGS = 0V, IS = - 95A IS = - 95A VR = 350V diS/dt = 200A/µs Max Unit A 1.2 4 V V/ns Tj = 25°C 600 ns Tj = 25°C 34 µC www.microsemi.com August, 2009 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 95A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C 2–6 APTC60TAM24TPG – Rev 0 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X APTC60TAM24TPG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 -40 -40 -40 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 Typ Max 0.27 Unit °C/W V 150 125 100 5 250 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ SP6-P Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com www.microsemi.com 3–6 APTC60TAM24TPG – Rev 0 August, 2009 9 places (3:1) APTC60TAM24TPG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 280 720 VGS=15&10V 6.5V 560 ID, Drain Current (A) 6V 480 400 5.5V 320 240 5V 160 4.5V 80 4V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 240 200 160 120 80 TJ=125°C 40 TJ=25°C 0 0 5 10 15 20 25 0 Normalized to VGS=10V @ 95A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 100 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) 0.9 80 60 40 20 0 0 40 80 120 160 200 240 280 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 August, 2009 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 4–6 APTC60TAM24TPG – Rev 0 ID, Drain Current (A) 640 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) 0.9 0.8 0.7 limited by RDSon 100 100 µs 0.6 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 10000 1000 Crss 10 0 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 1000000 100 100 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 100000 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=95A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) August, 2009 VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 C, Capacitance (pF) VGS=10V ID= 95A 2.5 5–6 APTC60TAM24TPG – Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60TAM24TPG APTC60TAM24TPG Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=2.5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=2.5Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) 20 50 40 30 tr 20 10 0 0 0 20 40 60 80 100 120 140 160 0 20 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy (mJ) Eoff 2 1 VDS=400V ID=95A TJ=125°C L=100µH 4 3 Eoff Eon 2 1 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 Operating Frequency vs Drain Current 250 ZVS 200 ZCS 150 IDR, Reverse Drain Current (A) 300 VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C 100 hard switching 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80 5 10 15 20 25 Gate Resistance (Ohms) 90 Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 August, 2009 Switching Energy (mJ) Eon 0 Frequency (kHz) 80 100 120 140 160 5 VDS=400V RG=2.5Ω TJ=125°C L=100µH 3 60 ID, Drain Current (A) Switching Energy vs Current 4 tf APTC60TAM24TPG – Rev 0 td(on) and td(off) (ns) 120