APTM50HM75FT Full - Bridge MOSFET Power Module Application · Welding converters · Switched Mode Power Supplies · Uninterruptible Power Supplies VBUS Q1 Q3 G1 G3 S1 S3 OUT1 OUT2 Q2 Q4 G2 G4 S2 S4 NTC1 NT C2 0/VBUS G3 G4 S3 S4 VBUS 0/VBUS VDSS = 500V RDSon = 75mW max @ Tj = 25°C ID = 46A @ Tc = 25°C OUT2 OUT1 S1 S2 NTC2 G1 G2 NTC1 Features · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 46 34 184 ±30 75 357 46 50 2500 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50HM75FT – Rev 1 May, 2004 Symbol VDSS APTM50HM75FT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 250µA Min 500 Typ Tj = 25°C Tj = 125°C Zero Gate Voltage Drain Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 3 Max Unit V 250 1000 75 5 ±100 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 46A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v pF nC 33 65 18 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 46A RG = 5W Rise Time Typ 5600 1200 90 123 35 ns 87 77 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω 755 µJ 726 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω 1241 µJ 846 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 46A IS = - 46A VR = 250V diS/dt = 100A/µs IS = - 46A VR = 250V diS/dt = 100A/µs Tj = 25°C 233 Tj = 125°C 499 Tj = 25°C 1.9 Tj = 125°C 5.7 Max 46 34 1.3 15 Unit A V V/ns ns µC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR £ VDSS Tj £ 150°C IS £ - 46A di/dt £ 700A/µs APT website – http://www.advancedpower.com 2–6 APTM50HM75FT – Rev 1 May, 2004 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w APTM50HM75FT Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink Typ Max 0.35 150 125 100 4.7 160 M5 Unit °C/W V °C N.m g Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = Min Typ 68 4080 Max Unit kW K R 25 é æ 1 1 öù T: Thermistor temperature - ÷÷ú RT: Thermistor value at T exp ê B25 / 85 çç è T25 T øû ë APT website – http://www.advancedpower.com 3–6 APTM50HM75FT – Rev 1 May, 2004 Package outline APTM50HM75FT Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 160 Transfert Characteristics 8V VGS=10&15V 140 ID, Drain Current (A) ID, Drain Current (A) 10 120 180 7.5V 120 100 7V 80 6.5V 60 40 6V 20 5.5V VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 TJ=25°C 20 TJ=125°C TJ=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to VGS=10V @ 23A 1.15 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 50 VGS=10V 1.10 1.05 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 VGS=20V 1.00 0.95 0.90 0.85 0.80 40 30 20 10 0 0 20 40 60 ID, Drain Current (A) 80 100 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4–6 APTM50HM75FT – Rev 1 May, 2004 Thermal Impedance (°C/W) 0.4 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=23A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100µs limited by RDSon 10 1ms 10ms 1 Single pulse TJ=150°C 100ms 0.1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) limited by RDSon 100 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=46A 12 T =25°C J V =250V CE 10 VCE=400V 8 6 4 2 0 0 20 APT website – http://www.advancedpower.com 40 60 80 100 120 140 160 Gate Charge (nC) 5–6 APTM50HM75FT – Rev 1 May, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50HM75FT APTM50HM75FT Delay Times vs Current Rise and Fall times vs Current 120 td(off) VDS=333V RG=5Ω TJ=125°C L=100µH 100 80 tr and tf (ns) VDS=333V RG=5Ω TJ=125°C L=100µH 60 40 td(on) 20 80 60 40 tr 20 0 0 10 20 30 40 50 60 70 10 20 ID, Drain Current (A) VDS=333V RG=5Ω TJ=125°C L=100µH 2 1.5 50 60 70 Switching Energy vs Gate Resistance Eon Eoff 1 40 4 Switching Energy (mJ) Switching Energy (mJ) 2.5 30 ID, Drain Current (A) Switching Energy vs Current 0.5 VDS=333V ID=46A TJ=125°C L=100µH 3.5 3 2.5 Eoff 2 Eon 1.5 1 0.5 0 0 10 20 30 40 50 60 0 70 10 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=333V D=50% RG=5Ω TJ=125°C 350 300 250 200 150 100 50 0 10 15 20 25 30 ID, Drain Current (A) 20 30 40 50 Gate Resistance (Ohms) 400 Frequency (kHz) tf 35 40 1000 100 Source to Drain Diode Forward Voltage TJ=150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50HM75FT – Rev 1 May, 2004 td(on) and td(off) (ns) 100