ADPOW APTM50HM75FT

APTM50HM75FT
Full - Bridge
MOSFET Power Module
Application
· Welding converters
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
VBUS
Q1
Q3
G1
G3
S1
S3
OUT1
OUT2
Q2
Q4
G2
G4
S2
S4
NTC1
NT C2
0/VBUS
G3
G4
S3
S4
VBUS
0/VBUS
VDSS = 500V
RDSon = 75mW max @ Tj = 25°C
ID = 46A @ Tc = 25°C
OUT2
OUT1
S1
S2
NTC2
G1
G2
NTC1
Features
· Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
46
34
184
±30
75
357
46
50
2500
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM50HM75FT – Rev 1 May, 2004
Symbol
VDSS
APTM50HM75FT
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
VGS = 0V, ID = 250µA
Min
500
Typ
Tj = 25°C
Tj = 125°C
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 500V
VGS = 0V,VDS = 400V
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 10V, ID = 23A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
3
Max
Unit
V
250
1000
75
5
±100
mW
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 250V
ID = 46A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
pF
nC
33
65
18
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 46A
RG = 5W
Rise Time
Typ
5600
1200
90
123
35
ns
87
77
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
755
µJ
726
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
1241
µJ
846
Source - Drain diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 46A
IS = - 46A
VR = 250V
diS/dt = 100A/µs
IS = - 46A
VR = 250V
diS/dt = 100A/µs
Tj = 25°C
233
Tj = 125°C
499
Tj = 25°C
1.9
Tj = 125°C
5.7
Max
46
34
1.3
15
Unit
A
V
V/ns
ns
µC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
VR £ VDSS Tj £ 150°C
IS £ - 46A di/dt £ 700A/µs
APT website – http://www.advancedpower.com
2–6
APTM50HM75FT – Rev 1 May, 2004
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery w
APTM50HM75FT
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-40
-40
-40
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
Typ
Max
0.35
150
125
100
4.7
160
M5
Unit
°C/W
V
°C
N.m
g
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT =
Min
Typ
68
4080
Max
Unit
kW
K
R 25
é
æ 1
1 öù T: Thermistor temperature
- ÷÷ú RT: Thermistor value at T
exp ê B25 / 85 çç
è T25 T øû
ë
APT website – http://www.advancedpower.com
3–6
APTM50HM75FT – Rev 1 May, 2004
Package outline
APTM50HM75FT
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.9
0.3
0.7
0.25
0.5
0.2
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
160
Transfert Characteristics
8V
VGS=10&15V
140
ID, Drain Current (A)
ID, Drain Current (A)
10
120
180
7.5V
120
100
7V
80
6.5V
60
40
6V
20
5.5V
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
80
60
40
TJ=25°C
20
TJ=125°C
TJ=-55°C
0
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
RDS(on) vs Drain Current
1.20
Normalized to
VGS=10V @ 23A
1.15
2
3
4
5
6
7
8
DC Drain Current vs Case Temperature
50
VGS=10V
1.10
1.05
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
1
VGS=20V
1.00
0.95
0.90
0.85
0.80
40
30
20
10
0
0
20
40
60
ID, Drain Current (A)
80
100
25
50
75
100
125
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
150
4–6
APTM50HM75FT – Rev 1 May, 2004
Thermal Impedance (°C/W)
0.4
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=23A
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
1.2
1.0
0.9
0.8
0.7
0.6
100µs
limited by RDSon
10
1ms
10ms
1
Single pulse
TJ=150°C
100ms
0.1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
limited by RDSon
100
Ciss
10000
Coss
1000
Crss
100
10
0
10
20
30
40
VDS, Drain to Source Voltage (V)
50
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
VCE=100V
ID=46A
12 T =25°C
J
V =250V
CE
10
VCE=400V
8
6
4
2
0
0
20
APT website – http://www.advancedpower.com
40 60 80 100 120 140 160
Gate Charge (nC)
5–6
APTM50HM75FT – Rev 1 May, 2004
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50HM75FT
APTM50HM75FT
Delay Times vs Current
Rise and Fall times vs Current
120
td(off)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
100
80
tr and tf (ns)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
60
40
td(on)
20
80
60
40
tr
20
0
0
10
20
30
40
50
60
70
10
20
ID, Drain Current (A)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
2
1.5
50
60
70
Switching Energy vs Gate Resistance
Eon
Eoff
1
40
4
Switching Energy (mJ)
Switching Energy (mJ)
2.5
30
ID, Drain Current (A)
Switching Energy vs Current
0.5
VDS=333V
ID=46A
TJ=125°C
L=100µH
3.5
3
2.5
Eoff
2
Eon
1.5
1
0.5
0
0
10
20
30
40
50
60
0
70
10
ID, Drain Current (A)
Operating Frequency vs Drain Current
IDR, Reverse Drain Current (A)
VDS=333V
D=50%
RG=5Ω
TJ=125°C
350
300
250
200
150
100
50
0
10
15
20
25
30
ID, Drain Current (A)
20
30
40
50
Gate Resistance (Ohms)
400
Frequency (kHz)
tf
35
40
1000
100
Source to Drain Diode Forward Voltage
TJ=150°C
10
TJ=25°C
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM50HM75FT – Rev 1 May, 2004
td(on) and td(off) (ns)
100