APTM50H10FT3 Full - Bridge MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 13 14 Q1 Q3 18 11 22 7 19 10 23 Q2 8 Q4 26 4 27 3 30 29 32 31 15 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 8 VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 37A @ Tc = 25°C 10 11 12 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 37 28 140 ±30 100 312 41 50 1600 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM50H10FT3 – Rev 1 December, 2004 Absolute maximum ratings APTM50H10FT3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 500V Min Tj = 25°C Tj = 125°C VGS = 10V, ID = 18.5A VGS = VDS, ID = 1mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Min VGS = 10V VBus = 250V ID = 37A IS VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Z trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 4367 894 61 96 Unit Max Unit µA mΩ V nA pF nC 49 15 21 Test Conditions 52 566 µJ 545 931 µJ 635 Min Tc = 25°C Tc = 80°C ns 73 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 37A, R G = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 37A, R G = 5Ω Typ 37 28 VGS = 0V, IS = - 37A IS = - 37A VR = 250V diS/dt = 100A/µs Max 100 500 100 5 ±100 24 Source - Drain diode ratings and characteristics Symbol 3 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 37A R G = 5Ω Rise Time Typ Max A 1.3 15 280 600 Tj = 25°C Tj = 125°C Tj = 25°C 2.3 Tj = 125°C 6.4 Unit V V/ns ns µC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 37A di/dt ≤ 100A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2-6 APTM50H10FT3 – Rev 1 December, 2004 Symbol APTM50H10FT3 Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K Min R 25 1 1 exp B25 / 85 − T25 T Max 0.40 150 125 100 4.7 110 M4 Temperature sensor NTC RT = Typ Typ 68 4080 Max Unit °C/W V °C N.m g Unit kΩ K T: Thermistor temperature RT : Thermistor value at T 28 17 1 12 APT website – http://www.advancedpower.com 3-6 APTM50H10FT3 – Rev 1 December, 2004 Package outline APTM50H10FT3 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.9 0.35 0.7 0.3 0.25 0.5 0.2 0.3 0.15 0.1 0.1 0.05 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 8V VGS=10&15V 120 7.5V I D, Drain Current (A) I D, Drain Current (A) 10 120 140 100 7V 80 6.5V 60 40 6V 20 5.5V VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 T J=25°C 20 T J=125°C T J=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to V GS=10V @ 18.5A 1.15 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 VGS =10V I D, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 1.10 1.05 VGS =20V 1.00 0.95 0.90 30 20 10 0 0 20 40 60 ID, Drain Current (A) 80 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4-6 APTM50H10FT3 – Rev 1 December, 2004 Thermal Impedance (°C/W) 0.45 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=18.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100µs 100 1ms 10 Single pulse TJ =150°C 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 1000 Coss 100 VGS , Gate to Source Voltage (V) 10000 Crss 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 100000 C, Capacitance (pF) limited by R limited byDSon RDSon ID=37A T J=25°C 12 V DS =100V VDS=250V 10 VDS=400V 8 6 4 2 0 0 20 APT website – http://www.advancedpower.com 40 60 80 100 120 140 Gate Charge (nC) 5-6 APTM50H10FT3 – Rev 1 December, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50H10FT3 APTM50H10FT3 Delay Times vs Current Rise and Fall times vs Current 100 td(off) 60 VDS=333V RG=5Ω TJ=125°C L=100µH 40 td(on) 20 60 40 tr 0 10 20 30 40 50 60 ID, Drain Current (A) 70 10 VDS=333V RG=5Ω TJ=125°C L=100µH 1.6 1.2 40 50 60 70 Switching Energy vs Gate Resistance Eon Eoff 0.8 30 2.5 Switching Energy (mJ) 2 20 I D, Drain Current (A) Switching Energy vs Current 0.4 Eoff V DS=333V ID=35A T J=125°C L=100µH 2 1.5 Eon 1 0.5 0 0 20 30 40 50 0 60 10 I D, Drain Current (A) Operating Frequency vs Drain Current ZCS 300 IDR, Reverse Drain Current (A) V DS=333V D=50% R G=5Ω T J=125°C T C=75°C 350 250 200 ZVS 150 hard switching 100 50 0 5 10 15 20 25 ID, Drain Current (A) 30 40 50 Gate Resistance (Ohms) 450 400 20 30 35 1000 100 Source to Drain Diode Forward Voltage TJ =150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTM50H10FT3 – Rev 1 December, 2004 10 Frequency (kHz) tf 20 0 Switching Energy (mJ) VDS=333V RG=5Ω T J=125°C L=100µH 80 t r and tf (ns) t d(on) and td(off) (ns) 80