MICROSEMI APTGF15X120T3G

APTGF15X120T3G
3 Phase bridge
NPT IGBT Power Module
15
VCES = 1200V
IC = 15A @ Tc = 80°C
Application
• Motor control
31
16
19
20
23
29
25
30
18
11
10
14
22
8
4
7
3
28
R1
13
12
2
It is recommended to connect a decoupling capacitor
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
28 27 26 25
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• RoHS compliant
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
10 11 12
Absolute maximum ratings
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
25
15
60
±20
140
Tj = 125°C
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TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
July, 2007
Parameter
Collector - Emitter Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTGF15X120T3G – Rev 0
Symbol
VCES
APTGF15X120T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
Tj = 25°C
Tj = 125°C
T
j = 25°C
VGE =15V
IC = 15A
Tj = 125°C
VGE = VCE, IC = 1mA
VGE = 20V, VCE = 0V
Typ
VGE = 0V
VCE = 1200V
2.5
3.2
4.0
4
Max
250
500
3.7
Unit
µA
V
6
400
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE = 15V
VBus = 600V
IC =15A
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 15A
RG = 33Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 15A
RG = 33Ω
VGE = 15V
Tj = 125°C
VBus = 600V
IC = 15A
Tj = 125°C
RG = 33Ω
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
1000
150
70
99
10
70
60
50
315
pF
nC
ns
30
60
50
356
ns
40
2
mJ
1
Reverse diode ratings and characteristics
IRM
Test Conditions
Min
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ
Max
1200
Maximum Peak Repetitive Reverse Voltage
VR=1200V
IF = 15A
IF = 30A
IF = 15A
IF = 15A
VR = 800V
di/dt =200A/µs
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V
Tj = 25°C
Tj = 125°C
Tc = 80°C
Unit
100
500
Tj = 125°C
15
2.8
3.4
2.4
Tj = 25°C
240
Tj = 125°C
Tj = 25°C
290
260
Tj = 125°C
960
µA
A
3.3
V
July, 2007
VRRM
ns
nC
2-6
APTGF15X120T3G – Rev 0
Symbol Characteristic
APTGF15X120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Resistance @ 25°C
R25
B 25/85 T25 = 298.15 K
RT =
Min
Typ
50
3952
Max
Unit
kΩ
K
Min
Typ
Max
0.9
2
Unit
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
− 
exp  B25 / 85 
 T25 T 

Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
2.5
°C/W
V
150
125
100
4.7
110
°C
N.m
g
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-6
APTGF15X120T3G – Rev 0
28
17
1
July, 2007
SP3 Package outline (dimensions in mm)
APTGF15X120T3G
Typical Performance Curve
Output characteristics (VGE=15V)
250µs Pulse Test
< 0.5% Duty cycle
60
TJ=25°C
50
40
30
TJ=125°C
20
10
14
12
TJ=25°C
10
8
6
4
TJ=125°C
2
1
2
3
4
5
6
7
VCE, Collector to Emitter Voltage (V)
0
8
VGE, Gate to Emitter Voltage (V)
Transfer Characteristics
70
250µs Pulse Test
< 0.5% Duty cycle
60
50
40
30
20
TJ=125°C
10
TJ=25°C
0
2.5
5
7.5
10
12.5
VGE, Gate to Emitter Voltage (V)
TJ = 125°C
250µs Pulse Test
< 0.5% Duty cycle
8
7
Ic=30A
6
5
Ic=15A
4
3
2
Ic=7.5A
1
0
9
10
11
12
13
14
15
IC = 15A
TJ = 25°C
16
2
2.5
3
3.5
VCE=240V
VCE=600V
14
12
VCE=960V
10
8
6
4
2
0
0
16
6
20
40
60
80
100
120
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
5
3
Ic=7.5A
2
1
0
-50
40
Ic, DC Collector Current (A)
1.05
1.00
0.95
0.90
0.85
0.80
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
35
30
25
July, 2007
Breakdown Voltage vs Junction Temp.
1.10
Ic=30A
Ic=15A
4
VGE, Gate to Emitter Voltage (V)
Collector to Emitter Breakdown Voltage
(Normalized)
1.5
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
9
1
Gate Charge
18
15
VCE, Collector to Emitter Voltage (V)
0
0.5
VCE, Collector to Emitter Voltage (V)
20
15
10
5
0
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
www.microsemi.com
-50
-25
0
25
50
75 100 125 150
TC, Case Temperature (°C)
4-6
APTGF15X120T3G – Rev 0
0
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
0
0
VCE, Collector to Emitter Voltage (V)
Output Characteristics (VGE=10V)
16
Ic, Collector Current (A)
Ic, Collector Current (A)
70
APTGF15X120T3G
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
VCE = 600V
RG = 33Ω
70
65
VGE = 15V
60
55
50
0
5
10
15
20
25
30
400
VGE=15V,
TJ=125°C
350
300
250
200
35
0
5
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 600V
RG = 33Ω
120
45
tf, Fall Time (ns)
tr, Rise Time (ns)
20
25
30
35
Current Fall Time vs Collector Current
80
VGE=15V
40
TJ = 125°C
40
35
TJ = 25°C
30
25
0
5
10
15
20
25
30
VCE = 600V, VGE = 15V, RG = 33Ω
20
35
0
5
10
15
20
25
30
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
VCE = 600V
RG = 33Ω
7
6
TJ=125°C,
VGE=15V
5
4
TJ=25°C,
VGE=15V
3
2
1
0
0
5
10
15
20
25
30
ICE, Collector to Emitter Current (A)
TJ = 125°C
1.5
TJ = 25°C
1
0.5
0
35
0
5
10
15
20
25
30
ICE, Collector to Emitter Current (A)
35
Reverse Bias Safe Operating Area
35
Eon, 15A
5
4
Eoff, 15A
3
2
1
0
30
25
20
15
July, 2007
IC, Collector Current (A)
VCE = 600V
VGE = 15V
TJ= 125°C
6
VCE = 600V
VGE = 15V
RG = 33Ω
2
Switching Energy Losses vs Gate Resistance
7
35
Turn-Off Energy Loss vs Collector Current
2.5
Turn-On Energy Loss vs Collector Current
8
Eoff, Turn-off Energy Loss (mJ)
Eon, Turn-On Energy Loss (mJ)
15
50
0
Switching Energy Losses (mJ)
10
ICE, Collector to Emitter Current (A)
160
8
VGE=15V,
TJ=25°C
VCE = 600V
RG = 33Ω
10
5
0
0
20
40
60
80
100
120
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
Gate Resistance (Ohms)
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5-6
APTGF15X120T3G – Rev 0
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
75
APTGF15X120T3G
Operating Frequency vs Collector Current
120
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
10000
Cies
1000
Coes
100
Cres
10
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
VCE = 600V
D = 50%
RG = 33Ω
TJ = 125°C
TC= 75°C
80
60
40
Hard
switching
20
0
0
5
10
15
20
IC, Collector Current (A)
25
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
Thermal Impedance (°C/W)
50
100
0.9
0.8
0.7
0.6
0.4
0.2
0.5
0.3
Single Pulse
0.1
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTGF15X120T3G – Rev 0
July, 2007
Rectangular Pulse Duration (Seconds)