ADPOW APTM120A20D

APTM120A20D
Phase leg
with Series diodes
MOSFET Power Module
VDSS = 1200V
RDSon = 200mΩ max @ Tj = 25°C
ID = 50A @ Tc = 25°C
Application
•
Zero Current Switching resonant mode
Features
•
•
•
•
G1
VBUS
0/VBUS
OUT
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
S1
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1200
50
37
200
±30
200
1250
12
30
1300
Unit
V
A
V
mΩ
W
A
July, 2004
G2
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120U20D Rev 0
•
•
•
•
S2
APTM120A20D
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
BVDSS
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V, ID = 1.5mA
Min
1200
VGS = 0V,VDS = 1200V
T j = 25°C
VGS = 0V,VDS = 1000V
T j = 125°C
VGS = 10V, ID = 25A
VGS = VDS, ID = 6mA
VGS = ±30 V, VDS = 0V
3
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 600V
ID = 50A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Typ
15.2
2.2
0.42
600
Max
Unit
V
1.5
6
200
5
±450
mΩ
V
nA
Max
Unit
mA
nF
nC
84
390
10
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 50A
R G =0.8Ω
Rise Time
Typ
10
ns
68
36
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 50A, R G = 0.8Ω
2.79
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 50A, R G = 0.8Ω
5.6
mJ
0.6
mJ
0.81
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 120A
IF = 2400A
IF = 120A
IF = 120A
VR = 800V
di/dt = 400A/µs
IF = 120A
VR = 800V
di/dt = 400A/µs
Min
1200
Typ
Tj = 125°C
120
2
2.3
1.8
Tj = 25°C
400
Tj = 125°C
470
Tj = 25°C
2.4
Tj = 125°C
8
T c = 70°C
APT website – http://www.advancedpower.com
Max
Unit
V
A
2.5
V
July, 2004
Symbol Characteristic
VRRM Maximum Repetitive Reverse Voltage
IF(A V)
Maximum Average Forward Current
ns
µC
2–6
APTM120U20D Rev 0
Series diode ratings and characteristics
APTM120A20D
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Series diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.1
0.46
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM120U20D Rev 0
July, 2004
Package outline
APTM120A20D
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
180
150
7V
120
6.5V
90
6V
60
5.5V
30
ID, Drain Current (A)
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
150
120
90
60
TJ =25°C
30
0
0
0
5
10
15
20
25
30
0
ID, DC Drain Current (A)
1.2
VGS=10V
1.1
VGS=20V
1
3
4
5
6
7
8
60
Normalized to
VGS =10V @ 25A
1.3
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
0.9
0.8
50
40
30
20
10
0
0
30
60
90
ID, Drain Current (A)
120
25
50
75
100
125
150
TC, Case Temperature (°C)
July, 2004
RDS(on) Drain to Source ON Resistance
TJ =-55°C
TJ=125°C
5V
APT website – http://www.advancedpower.com
4–6
APTM120U20D Rev 0
I D, Drain Current (A)
VGS =15, 10 & 8V
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=25A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
limited by RDS on
100µs
100
1ms
10
Single pulse
TJ =150°C
10ms
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
I D=50A
TJ=25°C
12
10
8
V DS =240V
VDS=600V
VDS=960V
6
4
2
0
0
120 240 360 480 600 720 840
Gate Charge (nC)
July, 2004
0
1200
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5–6
APTM120U20D Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM120A20D
APTM120A20D
Delay Times vs Current
Rise and Fall times vs Current
50
t d(off)
60
tf
tr and tf (ns)
V DS =800V
RG =0.8Ω
T J=125°C
L=100µH
40
20
V DS =800V
RG =0.8Ω
T J=125°C
L=100µH
25
0
0
10
30
50
70
90
110
10
30
I D, Drain Current (A)
110
9
VDS=800V
RG=0.8Ω
TJ=125°C
L=100µH
9
E on
Switching Energy (mJ)
6
3
Eoff
0
Eon
6
VDS=800V
ID=50A
T J=125°C
L=100µH
3
Eoff
0
10
30
50
70
90
110
0
1
2
ID, Drain Current (A)
Operating Frequency vs Drain Current
200
125
50
25
5
6
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
150
75
4
1000
175
100
3
Gate Resistance (Ohms)
VDS=800V
D=50%
RG=0.8Ω
T J=125°C
T C=75°C
0
10
20
30
40
ID, Drain Current (A)
50
TJ=150°C
100
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
July, 2004
Switching Energy (mJ)
50
70
90
I D, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
12
Frequency (kHz)
tr
t d(on)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM120U20D Rev 0
td(on) and td(off) (ns)
80