APTM50UM09F-AlN Single Switch MOSFET Power Module SK S D DK G S D Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 497 371 1988 ±30 9 5000 71 50 3000 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50UM09F-AlN Rev 0 July, 2004 DK VDSS = 500V RDSon = 9 mΩ max @ Tj = 25°C ID = 497A @ Tc = 25°C APTM50UM09F-AlN All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V, ID = 1.5mA Tj = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 248.5A VGS = VDS, ID = 30mA VGS = ±30 V, VDS = 0V Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge 3 Min VGS = 10V VBus = 250V ID =497A Typ 63.3 12.4 0.63 1200 Unit V 600 2500 9 5 ±450 mΩ V nA Max Unit µA nF nC 630 21 42 100 6 mJ 6.2 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 497A, R G =0.5Ω Test Conditions ns 96 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 497A, R G = 0.5Ω 9.48 mJ 6.96 Min Typ Tj = 25°C Max 497 371 1.3 18 300 Tj = 125°C 600 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 497A IS = - 497A VR = 250V diS/dt = 600A/µs IS = - 497A VR = 250V diS/dt = 600A/µs Max 300 Source - Drain diode ratings and characteristics Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Z Typ VGS = 0V,VDS = 500V Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 497A R G = 0.5Ω Tf Symbol IS Min 500 Tj = 25°C 15.6 Tj = 125°C 60 Unit A V V/ns ns µC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 497A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2–6 APTM50UM09F-AlN Rev 0 July, 2004 Symbol BVDSS APTM50UM09F-AlN Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Torque Mounting torque Wt Package Weight Min Transistor RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature To Heatsink For teminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.025 150 125 100 5 3.5 280 Unit °C/W V °C N.m g APT website – http://www.advancedpower.com 3–6 APTM50UM09F-AlN Rev 0 July, 2004 Package outline APTM50UM09F-AlN Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.03 0.025 0.9 0.02 0.7 0.015 0.5 0.01 0.3 0.005 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 900 6.5V 600 6V 300 5.5V 720 600 480 360 TJ =25°C 240 TJ =125°C TJ=-55°C 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 520 Normalized to VGS=10V @ 248.5A 1.3 1.2 VGS=10V 1.1 1 VGS =20V 0.9 0.8 416 312 208 104 0 0 180 360 540 720 900 I D, Drain Current (A) 1080 25 APT website – http://www.advancedpower.com 50 75 100 125 TC, Case Temperature (°C) 150 4–6 APTM50UM09F-AlN Rev 0 July, 2004 RDS(on) Drain to Source ON Resistance 0 840 120 5V 0 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 960 7V ID, Drain Current (A) 7.5V ID, DC Drain Current (A) ID, Drain Current (A) VGS =10&15V 1.4 Transfert Characteristics 1080 1200 1.05 0.95 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=248.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 10000 1.2 1.0 0.9 0.8 0.7 1000 100 us limited by RDSon 1 ms 100 10 ms 10 Single pulse TJ=150°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Coss 10000 Crss 1000 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 14 VDS=100V I D=497A TJ =25°C 12 V DS =250V 10 VDS=400V 8 6 4 2 0 0 250 APT website – http://www.advancedpower.com 500 750 1000 1250 1500 Gate Charge (nC) 5–6 APTM50UM09F-AlN Rev 0 July, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM50UM09F-AlN APTM50UM09F-AlN Delay Times vs Current Rise and Fall times vs Current 70 VDS=333V RG=0.5Ω TJ=125°C L=100µH 120 td(off) 50 10 100 200 300 400 500 600 700 800 I D, Drain Current (A) 80 tr 0 100 200 300 400 500 600 700 800 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 12 38 V DS=333V RG=0.5Ω T J=125°C L=100µH Switching Energy (mJ) Switching Energy (mJ) 18 15 Eon Eoff 9 6 3 250 ZCS 200 100 50 VDS=333V D=50% RG=0.5Ω TJ=125°C TC=75°C ZVS Hard switching 0 50 100 150 200 250 300 350 400 450 I D, Drain Current (A) 26 Eoff 22 18 Eon 14 10 1 2 3 4 5 6 7 8 9 Gate Resistance (Ohms) IDR, Reverse Drain Current (A) Frequency (kHz) 300 30 0 Operating Frequency vs Drain Current 350 V DS=333V ID=497A T J=125°C L=100µH 34 6 0 100 200 300 400 500 600 700 800 I D, Drain Current (A) 150 tf 40 td(on) 30 VDS=333V RG=0.5Ω TJ=125°C L=100µH Source to Drain Diode Forward Voltage 10000 1000 TJ=150°C TJ=25°C 100 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50UM09F-AlN Rev 0 July, 2004 90 160 t r and tf (ns) td(on) and t d(off) (ns) 110