ADPOW APTM50UM09F-ALN

APTM50UM09F-AlN
Single Switch
MOSFET Power Module
SK
S
D
DK
G
S
D
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
SK
G
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
497
371
1988
±30
9
5000
71
50
3000
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM50UM09F-AlN Rev 0 July, 2004
DK
VDSS = 500V
RDSon = 9 mΩ max @ Tj = 25°C
ID = 497A @ Tc = 25°C
APTM50UM09F-AlN
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V, ID = 1.5mA
Tj = 25°C
VGS = 0V,VDS = 400V
Tj = 125°C
VGS = 10V, ID = 248.5A
VGS = VDS, ID = 30mA
VGS = ±30 V, VDS = 0V
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VSD
dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
3
Min
VGS = 10V
VBus = 250V
ID =497A
Typ
63.3
12.4
0.63
1200
Unit
V
600
2500
9
5
±450
mΩ
V
nA
Max
Unit
µA
nF
nC
630
21
42
100
6
mJ
6.2
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 497A, R G =0.5Ω
Test Conditions
ns
96
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 497A, R G = 0.5Ω
9.48
mJ
6.96
Min
Typ
Tj = 25°C
Max
497
371
1.3
18
300
Tj = 125°C
600
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 497A
IS = - 497A
VR = 250V
diS/dt = 600A/µs
IS = - 497A
VR = 250V
diS/dt = 600A/µs
Max
300
Source - Drain diode ratings and characteristics
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery Z
Typ
VGS = 0V,VDS = 500V
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 497A
R G = 0.5Ω
Tf
Symbol
IS
Min
500
Tj = 25°C
15.6
Tj = 125°C
60
Unit
A
V
V/ns
ns
µC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 497A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
APT website – http://www.advancedpower.com
2–6
APTM50UM09F-AlN Rev 0 July, 2004
Symbol
BVDSS
APTM50UM09F-AlN
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case
Torque
Mounting torque
Wt
Package Weight
Min
Transistor
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To Heatsink
For teminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.025
150
125
100
5
3.5
280
Unit
°C/W
V
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM50UM09F-AlN Rev 0 July, 2004
Package outline
APTM50UM09F-AlN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.03
0.025
0.9
0.02
0.7
0.015
0.5
0.01
0.3
0.005
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
900
6.5V
600
6V
300
5.5V
720
600
480
360
TJ =25°C
240
TJ =125°C
TJ=-55°C
0
0
5
10
15
20
25
VDS , Drain to Source Voltage (V)
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
520
Normalized to
VGS=10V @ 248.5A
1.3
1.2
VGS=10V
1.1
1
VGS =20V
0.9
0.8
416
312
208
104
0
0
180
360 540 720 900
I D, Drain Current (A)
1080
25
APT website – http://www.advancedpower.com
50
75
100
125
TC, Case Temperature (°C)
150
4–6
APTM50UM09F-AlN Rev 0 July, 2004
RDS(on) Drain to Source ON Resistance
0
840
120
5V
0
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
960
7V
ID, Drain Current (A)
7.5V
ID, DC Drain Current (A)
ID, Drain Current (A)
VGS =10&15V
1.4
Transfert Characteristics
1080
1200
1.05
0.95
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=248.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50 75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
10000
1.2
1.0
0.9
0.8
0.7
1000
100 us
limited by RDSon
1 ms
100
10 ms
10
Single pulse
TJ=150°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Coss
10000
Crss
1000
100
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
1
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
14
VDS=100V
I D=497A
TJ =25°C
12
V DS =250V
10
VDS=400V
8
6
4
2
0
0
250
APT website – http://www.advancedpower.com
500
750 1000 1250 1500
Gate Charge (nC)
5–6
APTM50UM09F-AlN Rev 0 July, 2004
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50UM09F-AlN
APTM50UM09F-AlN
Delay Times vs Current
Rise and Fall times vs Current
70
VDS=333V
RG=0.5Ω
TJ=125°C
L=100µH
120
td(off)
50
10
100 200 300 400 500 600 700 800
I D, Drain Current (A)
80
tr
0
100 200 300 400 500 600 700 800
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
12
38
V DS=333V
RG=0.5Ω
T J=125°C
L=100µH
Switching Energy (mJ)
Switching Energy (mJ)
18
15
Eon
Eoff
9
6
3
250
ZCS
200
100
50
VDS=333V
D=50%
RG=0.5Ω
TJ=125°C
TC=75°C
ZVS
Hard
switching
0
50 100 150 200 250 300 350 400 450
I D, Drain Current (A)
26
Eoff
22
18
Eon
14
10
1
2
3
4
5
6
7
8
9
Gate Resistance (Ohms)
IDR, Reverse Drain Current (A)
Frequency (kHz)
300
30
0
Operating Frequency vs Drain Current
350
V DS=333V
ID=497A
T J=125°C
L=100µH
34
6
0
100 200 300 400 500 600 700 800
I D, Drain Current (A)
150
tf
40
td(on)
30
VDS=333V
RG=0.5Ω
TJ=125°C
L=100µH
Source to Drain Diode Forward Voltage
10000
1000
TJ=150°C
TJ=25°C
100
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM50UM09F-AlN Rev 0 July, 2004
90
160
t r and tf (ns)
td(on) and t d(off) (ns)
110