ADPOW APTM120U100D-ALN

APTM120U100D-AlN
Single switch
with Series diodes
MOSFET Power Module
VDSS = 1200V
RDSon = 100mΩ max @ Tj = 25°C
ID = 116A @ Tc = 25°C
Application
• Zero Current Switching resonant mode
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
SK
G
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1200
116
86
464
±30
100
3290
24
50
3200
Unit
V
A
V
mΩ
W
A
July, 2004
D
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120U100D–AlN Rev 0
S
APTM120U100D-AlN
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
BVDSS
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V, ID = 1mA
Min
1200
VGS = 0V,VDS = 1200V
T j = 25°C
VGS = 0V,VDS = 1000V
T j = 125°C
VGS = 10V, ID = 58A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
3
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 600V
ID = 116A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Typ
28.9
4.4
0.8
1100
Max
Unit
V
1
4
100
5
±400
mΩ
V
nA
Max
Unit
mA
nF
nC
128
716
20
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 116A
R G =1.2Ω
Rise Time
Typ
17
ns
245
62
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 116A, R G = 1.2Ω
5
mJ
4.6
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 116A, R G = 1.2Ω
9.2
mJ
5.6
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 180A
IF = 360A
IF = 180A
IF = 180A
VR = 800V
di/dt = 800A/µs
IF = 180A
VR = 800V
di/dt = 800A/µs
Min
1200
Typ
Tj = 125°C
180
2
2.3
1.8
Tj = 25°C
370
Tj = 125°C
500
Tj = 25°C
3.9
Tj = 125°C
20.7
T c = 70°C
APT website – http://www.advancedpower.com
Max
Unit
V
A
2.5
V
July, 2004
Symbol Characteristic
VRRM Maximum Repetitive Reverse Voltage
IF(A V)
Maximum Average Forward Current
ns
µC
2–6
APTM120U100D–AlN Rev 0
Series diode ratings and characteristics
APTM120U100D-AlN
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Series diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.038
0.22
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM120U100D–AlN Rev 0
July, 2004
Package outline
APTM120U100D-AlN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.04
0.035
0.9
0.03
0.7
0.025
0.02
0.5
0.015
0.3
0.01
0.1
0.05
0.005
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
320
VGS =15, 10V
240
200
6V
160
5.5V
120
80
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
280
7V
ID, Drain Current (A)
5V
40
240
200
160
TJ =-55°C
120
TJ=25°C
80
40
4.5V
0
0
5
10
15
20
25
TJ =125°C
0
30
0
ID, DC Drain Current (A)
VGS=10V
1.1
VGS=20V
1
4
5
6
7
0.9
0.8
100
80
60
40
20
0
0
40
80
120
160
ID, Drain Current (A)
200
240
25
50
75
100
125
150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
July, 2004
RDS(on) Drain to Source ON Resistance
1.2
3
120
Normalized to
VGS =10V @ 58A
1.3
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
4–6
APTM120U100D–AlN Rev 0
I D, Drain Current (A)
280
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=58A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
limited by RDS on
100
1ms
10ms
10
Single pulse
TJ =150°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
Crss
1000
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
ID=116A
TJ=25°C
12
10
V DS=240V
VDS=600V
8
V DS=960V
6
4
2
0
0
300
600
900
1200
1500
Gate Charge (nC)
July, 2004
0
1200
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5–6
APTM120U100D–AlN Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM120U100D-AlN
APTM120U100D-AlN
Delay Times vs Current
Rise and Fall times vs Current
100
t d(off)
250
200
V DS=800V
RG=1.2Ω
T J=125°C
L=100µH
150
100
50
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
80
tr and tf (ns)
td(on) and td(off) (ns)
300
60
tr
40
20
td(on)
0
0
30
60
90
120
150
180
30
60
I D, Drain Current (A)
180
24
V DS =800V
RG =1.2Ω
T J=125°C
L=100µH
12
Switching Energy (mJ)
Switching Energy (mJ)
90
120
150
I D, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
16
Eon
Eoff
8
4
0
V DS=800V
ID=116A
T J=125°C
L=100µH
20
16
Eoff
12
Eon
8
4
30
60
90
120
150
ID, Drain Current (A)
180
0
2
4
6
8
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
150
ZCS
125
Hard
switching
100
IDR, Reverse Drain Current (A)
175
Frequency (kHz)
tf
VDS=800V
D=50%
RG=1.2Ω
T J=125°C
T C=75°C
75
50
25
0
50
70
90
ID, Drain Current (A)
110
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM120U100D–AlN Rev 0
July, 2004
30
100