APTM120U10SA Single switch Series & parallel diodes MOSFET Power Module SK CR1 D S Q1 G S D VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for MOSFET improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 116 86 464 ±30 120 3290 24 50 3200 Unit V A September, 2005 G V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM120U10SA Rev 0 SK APTM120U10SA All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 58A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V Test Conditions VR=200V IF(A V) Maximum Average Forward Current 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V trr Qrr Reverse Recovery Time Reverse Recovery Charge Max Unit mA mΩ V nA nF nC 20 17 62 5 9.2 mJ 5.6 Typ Tj = 25°C Tj = 125°C Max 350 600 Tj = 125°C Tj = 25°C 31 di/dt = 400A/µs Tj = 125°C 60 IF = 120A VR = 133V Tj = 25°C 120 Tj = 125°C 500 APT website – http://www.advancedpower.com mJ 4.6 Min 200 T c = 80°C ns 245 120 1.1 1.4 0.9 di/dt = 400A/µs Unit 716 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 116A, R G = 1.2Ω Maximum Reverse Leakage Current Typ 28.9 4.4 0.8 1100 Max 1 4 120 5 ±400 128 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 116A, R G = 1.2Ω IRM Diode Forward Voltage Min VGS = 10V VBus = 600V ID = 116A Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage VF 100 Test Conditions VGS = 0V VDS = 25V f = 1MHz Series diode ratings and characteristics Typ 3 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 116A R G =1.2Ω Rise Time Tf Min VGS = 0V,VDS = 1200V Unit V µA A 1.15 V September, 2005 IDSS Characteristic ns nC 2–6 APTM120U10SA Rev 0 Symbol APTM120U10SA Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Test Conditions Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle IF = 180A IF = 360A IF = 180A IF = 180A VR = 800V di/dt = 600A/µs IF = 180A VR = 800V di/dt = 600A/µs Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Tj = 125°C 180 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C 350 Tj = 25°C 1.7 Tj = 125°C 8.7 Symbol Characteristic Min Transistor Series diode Parallel diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Wt Package Weight To heatsink For terminals M6 M5 Max 200 750 T c = 80°C Thermal and package characteristics Torque Typ Tj = 25°C Tj = 125°C IRM VF Min 1200 2500 -40 -40 -40 3 2 Typ Unit V µA A 3 V ns µC Max 0.038 0.46 0.32 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–6 APTM120U10SA Rev 0 September, 2005 SP6 Package outline (dimensions in mm) APTM120U10SA Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.035 0.9 0.03 0.7 0.025 0.02 0.5 0.015 0.3 0.01 0.1 0.05 0.005 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 320 VGS =15, 10V 240 200 6V 160 5.5V 120 80 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 280 7V ID, Drain Current (A) 5V 40 240 200 160 TJ =-55°C 120 TJ=25°C 80 40 4.5V 0 0 5 10 15 20 25 TJ =125°C 0 30 0 ID, DC Drain Current (A) VGS=10V 1.1 VGS=20V 1 4 5 6 7 0.9 0.8 100 80 60 40 20 0 0 40 80 120 160 ID, Drain Current (A) 200 240 25 50 75 100 125 150 September, 2005 RDS(on) Drain to Source ON Resistance 1.2 3 120 Normalized to VGS =10V @ 58A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTM120U10SA Rev 0 I D, Drain Current (A) 280 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=58A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDS on 100 1ms 10ms 10 Single pulse TJ =150°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=116A TJ=25°C 12 10 V DS=240V VDS=600V 8 V DS=960V 6 4 2 0 0 300 600 900 1200 1500 Gate Charge (nC) September, 2005 0 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 5–6 APTM120U10SA Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120U10SA APTM120U10SA Delay Times vs Current Rise and Fall times vs Current 100 t d(off) 250 200 V DS=800V RG=1.2Ω T J=125°C L=100µH 150 100 50 VDS=800V RG=1.2Ω TJ=125°C L=100µH 80 tr and tf (ns) td(on) and td(off) (ns) 300 60 tr 40 20 td(on) 0 0 30 60 90 120 150 180 30 60 I D, Drain Current (A) 180 24 V DS =800V RG =1.2Ω T J=125°C L=100µH 12 Switching Energy (mJ) Switching Energy (mJ) 90 120 150 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 16 Eon Eoff 8 4 0 V DS=800V ID=116A T J=125°C L=100µH 20 16 Eoff 12 Eon 8 4 30 60 90 120 150 ID, Drain Current (A) 180 0 2 4 6 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 175 150 Frequency (kHz) tf ZVS 125 Hard switching 100 ZCS V DS=800V D=50% R G=1.2Ω T J=125°C T C=75°C 75 50 25 0 50 70 90 ID, Drain Current (A) 110 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM120U10SA Rev 0 September, 2005 30 100