APTM50UM19S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 500V RDSon = 19mΩ max @ Tj = 25°C ID = 163A @ Tc = 25°C Application CR1 D · · · S Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G · · · · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Low stray inductance - M6 power connectors - M4 signal connectors High level of integration Benefits · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 163 122 652 ±30 19 1136 46 50 2500 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTM50UM19S – Rev 1 May, 2004 Symbol VDSS APTM50UM19S All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 500µA Min 500 Zero Gate Voltage Drain Current VGS = 0V,VDS= 500V VGS = 0V,VDS= 400V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 81.5A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Typ Tj = 25°C Tj = 125°C 3 Max Unit V 200 1000 19 5 ±200 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 163A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v nF nC 132 260 18 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 163A RG = 1W Rise Time Typ 22.4 4.8 0.36 492 35 ns 87 77 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 163A, RG = 1Ω 3020 µJ 2904 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 163A, RG = 1Ω 4964 µJ 3384 u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs IF = 120A VR = 133V di/dt = 400A/µs Min Tj = 125°C Typ 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 Tc = 85°C APT website – http://www.advancedpower.com Max Unit A 1.15 V ns nC 2–7 APTM50UM19S – Rev 1 May, 2004 Symbol Characteristic Maximum Average Forward Current IF(AV) APTM50UM19S Parallel diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt = 200A/µs IF = 100A VR = 400V di/dt = 200A/µs Min Tj = 125°C Typ 100 1.6 1.9 1.4 Tj = 25°C 180 Tj = 125°C 220 Tj = 25°C 390 Tj = 125°C 1450 Tc = 80°C Max Unit A 1.8 V ns nC Thermal and package characteristics Min Transistor Series diode Parallel diode RthJC Junction to Case VISOL TJ TSTG TC Operating junction temperature range Storage Temperature Range Operating Case Temperature RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque Wt Package Weight M4 M6 APT website – http://www.advancedpower.com 2500 -40 -40 -40 3 Typ Max 0.11 0.46 0.6 Unit °C/W V 150 125 100 1.2 5 400 °C N.m g 3–7 APTM50UM19S – Rev 1 May, 2004 Symbol Characteristic APTM50UM19S Package outline APT website – http://www.advancedpower.com 4–7 APTM50UM19S – Rev 1 May, 2004 Mounting holes: 4xÆ6.5 mm APTM50UM19S Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.1 0.7 0.08 0.5 0.06 0.3 0.04 0.1 0.02 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 600 8V VGS=10&15V 500 ID, Drain Current (A) ID, Drain Current (A) 10 500 700 7.5V 400 7V 300 6.5V 200 6V 100 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 300 200 TJ=25°C 100 TJ=125°C 5.5V 0 TJ=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to VGS=10V @ 81.5A 1.15 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 180 VGS=10V 1.10 1.05 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 VGS=20V 1.00 0.95 0.90 0.85 160 140 120 100 80 60 40 20 0.80 0 0 100 200 300 ID, Drain Current (A) 400 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 5–7 APTM50UM19S – Rev 1 May, 2004 Thermal Impedance (°C/W) 0.12 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=81.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 0.6 limited by RDSon 100 100µs limited by RDSon 1ms 10 10ms Single pulse TJ=150°C 100ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=163A 12 T =25°C J V =250V CE 10 VCE=400V 8 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC) APT website – http://www.advancedpower.com 6–7 APTM50UM19S – Rev 1 May, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50UM19S APTM50UM19S Delay Times vs Current Rise and Fall times vs Current 120 td(off) VDS=333V RG=1Ω TJ=125°C L=100µH 100 80 tr and tf (ns) VDS=333V RG=1Ω TJ=125°C L=100µH 60 40 td(on) 20 80 60 40 tr 20 0 0 20 60 100 140 180 220 260 20 60 100 ID, Drain Current (A) VDS=333V RG=1Ω TJ=125°C L=100µH 8 6 Eon Eoff 4 180 220 260 Switching Energy vs Gate Resistance 16 Switching Energy (mJ) Switching Energy (mJ) 10 140 ID, Drain Current (A) Switching Energy vs Current 2 VDS=333V ID=163A TJ=125°C L=100µH 14 12 10 Eoff 8 Eon 6 4 2 0 0 20 60 100 140 180 220 0 260 2.5 ID, Drain Current (A) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 ID, Drain Current (A) IDR, Reverse Drain Current (A) VDS=333V D=50% RG=1Ω TJ=125°C 350 5 7.5 10 12.5 Gate Resistance (Ohms) Operating Frequency vs Drain Current 400 Frequency (kHz) tf 1000 Source to Drain Diode Forward Voltage TJ=150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7 APTM50UM19S – Rev 1 May, 2004 td(on) and td(off) (ns) 100