APTM10DDAM19T3 Dual Boost chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR1 CR2 22 7 23 8 Q2 Q1 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 VDSS = 100V RDSon = 19mΩ typ @ Tj = 25°C ID = 70A @ Tc = 25°C 10 11 12 Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 70 50 300 ±30 20 208 75 30 1500 Unit V A V mΩ W A May, 2005 Symbol VDSS mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM10DDAM19T3– Rev 0 Absolute maximum ratings APTM10DDAM19T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min VGS = 10V, ID = 35A VGS = VDS, ID = 1mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz 19 2 Min VGS = 10V VBus = 100V ID = 70A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Typ 5100 1900 800 200 Max 250 1000 20 4 ±100 Unit Max Unit µA mΩ V nA pF nC 40 92 35 Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 70A R G = 5Ω Rise Time Typ Tj = 25°C Tj = 125°C 70 ns 95 125 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 70A, R G = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 70A, R G = 5Ω 276 µJ 302 304 µJ 320 X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. VRRM Test Conditions Min Typ 200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=200V Tj = 25°C Tj = 125°C IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 80°C Diode Forward Voltage IF = 60A IF = 180A IF = 60A Tj = 125°C 60 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C Tj = 25°C 60 60 Tj = 125°C 250 trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A VR = 133V di/dt =200A/µs APT website – http://www.advancedpower.com Unit V IRM VF Max 250 500 µA A V May, 2005 Symbol Characteristic ns nC 2-6 APTM10DDAM19T3– Rev 0 Chopper diode ratings and characteristics APTM10DDAM19T3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ Transistor diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Max 0.6 0.9 2500 -40 -40 -40 1.5 RT = Min R 25 °C/W V 150 125 100 4.7 110 Temperature sensor NTC (for more information see application note APT0406 on www.advancedpower.com). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Unit Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Package outline (dimensions in mm) 12 APT website – http://www.advancedpower.com 3-6 APTM10DDAM19T3– Rev 0 May, 2005 28 17 1 APTM10DDAM19T3 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 125 VGS=15V, 10V & 9V 250 200 ID, Drain Current (A) 8V 150 7V 100 6V 50 0 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 75 50 T J=25°C 25 T J=125°C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 8 80 Normalized to V GS=10V @ 35A 1.4 VGS=10V 1.2 VGS=20V 1 1 2 3 4 5 6 7 VGS , Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.6 ID, DC Drain Current (A) 0.8 70 60 50 40 30 20 10 0 0 50 100 150 200 ID, Drain Current (A) 250 25 50 75 100 125 150 May, 2005 RDS(on) Drain to Source ON Resistance T J=-55°C 0 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTM10DDAM19T3– Rev 0 ID, Drain Current (A) 300 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 35A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 0.6 1ms limited by RDSon 100 10ms 10 100ms Single pulse TJ=150°C 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 10000 Ciss Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=70A T J=25°C 14 VDS=20V 12 VDS=50V 10 V DS =80V 8 6 4 2 0 0 40 80 120 160 200 240 280 Gate Charge (nC) May, 2005 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 APT website – http://www.advancedpower.com 5-6 APTM10DDAM19T3– Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM10DDAM19T3 APTM10DDAM19T3 Delay Times vs Current Rise and Fall times vs Current 160 120 80 VDS=66V RG=5Ω TJ=125°C L=100µH 60 40 td(on) 120 100 80 tr 60 20 0 0 0 20 40 60 80 100 ID, Drain Current (A) 0 120 1.5 0.5 Switching Energy (mJ) VDS=66V RG=5Ω TJ =125°C L=100µH 20 40 60 80 100 ID, Drain Current (A) 120 Switching Energy vs Gate Resistance Switching Energy vs Current 0.75 Eoff E on 0.25 0 VDS=66V ID=70A TJ=125°C L=100µH 1 Eoff 0.5 Eon 0 0 20 40 60 80 100 120 0 10 I D, Drain Current (A) Operating Frequency vs Drain Current ZCS 200 150 100 VDS=66V D=50% R G=5Ω TJ =125°C TC =75°C ZVS Hard switching 50 0 13 25 38 50 40 50 60 63 75 1000 TJ=150°C 100 T J=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTM10DDAM19T3– Rev 0 May, 2005 I D, Drain Current (A) 30 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 250 20 Gate Resistance (Ohms) 300 Frequency (kHz) tf 40 20 Eon and Eoff (mJ) VDS=66V R G=5Ω TJ =125°C L=100µH 140 td(off) tr and tf (ns) td(on) and td(off) (ns) 100