ADPOW APTM50HM75SCT

APTM50HM75SCT
Full bridge
Series & SiC parallel diodes
MOSFET Power Module
Application
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
VBUS
CR3A
CR3B
Q3
G3
G1
OUT1 OUT2
S1
Q2
S3
CR4A
CR2A
CR2B
CR4B
Q4
G2
G4
S2
S4
0/VBUS
NTC1
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
·
Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
·
·
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
NTC2
·
·
G3
G4
S3
S4
VBUS
0/VBUS
OUT2
OUT1
S1
S2
NTC2
G1
G2
NTC1
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
·
·
·
·
·
Absolute maximum ratings
Symbol
VDSS
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
46
34
184
±30
75
357
46
50
2500
Unit
V
A
May, 2004
CR1B
Q1
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed
APT website – http://www.advancedpower.com
1–7
APTM50HM75SCT – Rev 1
CR1A
VDSS = 500V
RDSon = 75mW max @ Tj = 25°C
ID = 46A @ Tc = 25°C
APTM50HM75SCT
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
VGS = 0V, ID = 250µA
Min
500
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 500V
VGS = 0V,VDS = 400V
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 10V, ID = 23A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Typ
Tj = 25°C
Tj = 125°C
3
Max
Unit
V
100
500
75
5
±100
mW
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 250V
ID = 46A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy u
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy u
pF
nC
33
65
18
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 46A
RG = 5W
Rise Time
Typ
5590
1180
85
123
35
ns
87
77
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
453
µJ
726
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
745
µJ
846
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
Tj = 125°C
Typ
30
1.1
1.4
0.9
Tj = 25°C
24
Tj = 125°C
48
Tj = 25°C
33
Tj = 125°C
150
Tc = 85°C
APT website – http://www.advancedpower.com
Max
Unit
A
1.15
V
May, 2004
VF
Test Conditions
50% duty cycle
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 133V
di/dt = 200A/µs
IF = 30A
VR = 133V
di/dt = 200A/µs
ns
nC
2–7
APTM50HM75SCT – Rev 1
Symbol Characteristic
Maximum Average Forward Current
IF(AV)
APTM50HM75SCT
Parallel diode ratings and characteristics
Symbol Characteristic
Maximum Average Forward Current
IF(AV)
Test Conditions
50% duty cycle
Min
Tc = 125°C
Tj = 25°C
Tj = 175°C
Typ
20
1.6
2.0
VF
Diode Forward Voltage
IF = 20A
QC
Total Capacitive Charge
IF = 20A, VR = 300V
di/dt =800A/µs
28
Q
Total Capacitance
f = 1MHz, VR = 200V
130
f = 1MHz, VR = 400V
100
Max
1.8
2.4
Unit
A
V
nC
pF
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
Transistor
Series diode
Junction to Case
Parallel diode
RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
2500
-40
-40
-40
Max
0.35
1.2
1.5
Unit
°C/W
V
150
125
100
4.7
160
M5
°C
N.m
g
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
Max
Unit
kW
K
R 25
é
æ 1
1 öù T: Thermistor temperature
- ÷÷ú RT: Thermistor value at T
exp ê B25 / 85 çç
è T25 T øû
ë
May, 2004
Package outline
Typ
68
4080
APT website – http://www.advancedpower.com
3–7
APTM50HM75SCT – Rev 1
RT =
Min
APTM50HM75SCT
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.9
0.3
0.7
0.25
0.5
0.2
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
160
Transfert Characteristics
8V
VGS=10&15V
140
ID, Drain Current (A)
7.5V
120
100
7V
80
6.5V
60
40
6V
20
5.5V
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
80
60
40
TJ=25°C
20
TJ=125°C
TJ=-55°C
0
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 23A
1.15
3
4
5
6
7
8
DC Drain Current vs Case Temperature
VGS=10V
1.10
1.05
2
50
ID, DC Drain Current (A)
1.20
1
VGS, Gate to Source Voltage (V)
VGS=20V
1.00
0.95
0.90
0.85
0.80
40
30
20
10
0
0
20
40
60
ID, Drain Current (A)
80
100
25
50
75
100
125
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
150
May, 2004
ID, Drain Current (A)
10
120
180
RDS(on) Drain to Source ON Resistance
1
4–7
APTM50HM75SCT – Rev 1
Thermal Impedance (°C/W)
0.4
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=23A
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
1.2
1.0
0.9
0.8
0.7
0.6
100µs
limited by RDSon
10
1ms
10ms
1
Single pulse
TJ=150°C
100ms
0.1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
VGS, Gate to Source Voltage (V)
100000
Ciss
10000
Coss
1000
Crss
100
10
0
10
20
30
40
VDS, Drain to Source Voltage (V)
50
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
VCE=100V
ID=46A
12 T =25°C
J
V =250V
CE
10
VCE=400V
8
6
4
2
0
0
20
40 60 80 100 120 140 160
Gate Charge (nC)
May, 2004
C, Capacitance (pF)
limited by RDSon
100
APT website – http://www.advancedpower.com
5–7
APTM50HM75SCT – Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50HM75SCT
APTM50HM75SCT
Delay Times vs Current
Rise and Fall times vs Current
120
td(off)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
100
80
tr and tf (ns)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
60
40
td(on)
20
80
60
40
tr
20
0
0
10
20
30
40
50
60
70
10
20
ID, Drain Current (A)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
1.6
1.2
50
60
70
Switching Energy vs Gate Resistance
Eoff
Eon
0.8
40
4
Switching Energy (mJ)
Switching Energy (mJ)
2
30
ID, Drain Current (A)
Switching Energy vs Current
0.4
VDS=333V
ID=46A
TJ=125°C
L=100µH
3.5
3
2.5
Eoff
2
1.5
1
Eon
0.5
0
0
10
20
30
40
50
60
0
70
10
ID, Drain Current (A)
Operating Frequency vs Drain Current
IDR, Reverse Drain Current (A)
VDS=333V
D=50%
RG=5Ω
TJ=125°C
350
300
250
200
150
100
50
0
15
20
25
30
ID, Drain Current (A)
30
40
50
35
40
1000
100
Source to Drain Diode Forward Voltage
TJ=150°C
10
TJ=25°C
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
May, 2004
10
20
Gate Resistance (Ohms)
400
Frequency (kHz)
tf
APT website – http://www.advancedpower.com
6–7
APTM50HM75SCT – Rev 1
td(on) and td(off) (ns)
100
APTM50HM75SCT
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.6
0.9
1.4
1.2
0.7
1
0.8
0.5
0.6
0.3
0.4
0.1
0.2
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
400
TJ=25°C
35
30
TJ=75°C
25
IR Reverse Current (µA)
IF Forward Current (A)
Reverse Characteristics
Forward Characteristics
40
TJ=175°C
20
TJ=125°C
15
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
350
TJ=175°C
300
TJ=125°C
250
200
TJ=75°C
150
100
TJ=25°C
50
0
200
300
VF Forward Voltage (V)
400 500 600 700
VR Reverse Voltage (V)
800
Capacitance vs.Reverse Voltage
800
C, Capacitance (pF)
700
600
500
400
300
200
100
0
1000
May, 2004
10
100
VR Reverse Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
7–7
APTM50HM75SCT – Rev 1
1