APTM50HM75SCT Full bridge Series & SiC parallel diodes MOSFET Power Module Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies VBUS CR3A CR3B Q3 G3 G1 OUT1 OUT2 S1 Q2 S3 CR4A CR2A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS NTC1 Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated · Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF · · Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration NTC2 · · G3 G4 S3 S4 VBUS 0/VBUS OUT2 OUT1 S1 S2 NTC2 G1 G2 NTC1 ID IDM VGS RDSon PD IAR EAR EAS · · · · · Absolute maximum ratings Symbol VDSS Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 46 34 184 ±30 75 357 46 50 2500 Unit V A May, 2004 CR1B Q1 V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed APT website – http://www.advancedpower.com 1–7 APTM50HM75SCT – Rev 1 CR1A VDSS = 500V RDSon = 75mW max @ Tj = 25°C ID = 46A @ Tc = 25°C APTM50HM75SCT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 250µA Min 500 Zero Gate Voltage Drain Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Typ Tj = 25°C Tj = 125°C 3 Max Unit V 100 500 75 5 ±100 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 46A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy u Eon Turn-on Switching Energy Eoff Turn-off Switching Energy u pF nC 33 65 18 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 46A RG = 5W Rise Time Typ 5590 1180 85 123 35 ns 87 77 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω 453 µJ 726 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω 745 µJ 846 u In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Tj = 125°C Typ 30 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 33 Tj = 125°C 150 Tc = 85°C APT website – http://www.advancedpower.com Max Unit A 1.15 V May, 2004 VF Test Conditions 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs IF = 30A VR = 133V di/dt = 200A/µs ns nC 2–7 APTM50HM75SCT – Rev 1 Symbol Characteristic Maximum Average Forward Current IF(AV) APTM50HM75SCT Parallel diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) Test Conditions 50% duty cycle Min Tc = 125°C Tj = 25°C Tj = 175°C Typ 20 1.6 2.0 VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 300V di/dt =800A/µs 28 Q Total Capacitance f = 1MHz, VR = 200V 130 f = 1MHz, VR = 400V 100 Max 1.8 2.4 Unit A V nC pF Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ Transistor Series diode Junction to Case Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink 2500 -40 -40 -40 Max 0.35 1.2 1.5 Unit °C/W V 150 125 100 4.7 160 M5 °C N.m g Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K Max Unit kW K R 25 é æ 1 1 öù T: Thermistor temperature - ÷÷ú RT: Thermistor value at T exp ê B25 / 85 çç è T25 T øû ë May, 2004 Package outline Typ 68 4080 APT website – http://www.advancedpower.com 3–7 APTM50HM75SCT – Rev 1 RT = Min APTM50HM75SCT Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 160 Transfert Characteristics 8V VGS=10&15V 140 ID, Drain Current (A) 7.5V 120 100 7V 80 6.5V 60 40 6V 20 5.5V VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 TJ=25°C 20 TJ=125°C TJ=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 23A 1.15 3 4 5 6 7 8 DC Drain Current vs Case Temperature VGS=10V 1.10 1.05 2 50 ID, DC Drain Current (A) 1.20 1 VGS, Gate to Source Voltage (V) VGS=20V 1.00 0.95 0.90 0.85 0.80 40 30 20 10 0 0 20 40 60 ID, Drain Current (A) 80 100 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 May, 2004 ID, Drain Current (A) 10 120 180 RDS(on) Drain to Source ON Resistance 1 4–7 APTM50HM75SCT – Rev 1 Thermal Impedance (°C/W) 0.4 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=23A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100µs limited by RDSon 10 1ms 10ms 1 Single pulse TJ=150°C 100ms 0.1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=46A 12 T =25°C J V =250V CE 10 VCE=400V 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) May, 2004 C, Capacitance (pF) limited by RDSon 100 APT website – http://www.advancedpower.com 5–7 APTM50HM75SCT – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50HM75SCT APTM50HM75SCT Delay Times vs Current Rise and Fall times vs Current 120 td(off) VDS=333V RG=5Ω TJ=125°C L=100µH 100 80 tr and tf (ns) VDS=333V RG=5Ω TJ=125°C L=100µH 60 40 td(on) 20 80 60 40 tr 20 0 0 10 20 30 40 50 60 70 10 20 ID, Drain Current (A) VDS=333V RG=5Ω TJ=125°C L=100µH 1.6 1.2 50 60 70 Switching Energy vs Gate Resistance Eoff Eon 0.8 40 4 Switching Energy (mJ) Switching Energy (mJ) 2 30 ID, Drain Current (A) Switching Energy vs Current 0.4 VDS=333V ID=46A TJ=125°C L=100µH 3.5 3 2.5 Eoff 2 1.5 1 Eon 0.5 0 0 10 20 30 40 50 60 0 70 10 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=333V D=50% RG=5Ω TJ=125°C 350 300 250 200 150 100 50 0 15 20 25 30 ID, Drain Current (A) 30 40 50 35 40 1000 100 Source to Drain Diode Forward Voltage TJ=150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) May, 2004 10 20 Gate Resistance (Ohms) 400 Frequency (kHz) tf APT website – http://www.advancedpower.com 6–7 APTM50HM75SCT – Rev 1 td(on) and td(off) (ns) 100 APTM50HM75SCT Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 0.9 1.4 1.2 0.7 1 0.8 0.5 0.6 0.3 0.4 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 400 TJ=25°C 35 30 TJ=75°C 25 IR Reverse Current (µA) IF Forward Current (A) Reverse Characteristics Forward Characteristics 40 TJ=175°C 20 TJ=125°C 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 350 TJ=175°C 300 TJ=125°C 250 200 TJ=75°C 150 100 TJ=25°C 50 0 200 300 VF Forward Voltage (V) 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage 800 C, Capacitance (pF) 700 600 500 400 300 200 100 0 1000 May, 2004 10 100 VR Reverse Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7 APTM50HM75SCT – Rev 1 1