APTM10DDAM09T3 Dual Boost chopper MOSFET Power Module 13 14 CR1 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR2 22 7 23 8 Q2 Q1 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C 10 11 12 Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Max ratings Unit 100 V Tc = 25°C 139 ID Continuous Drain Current A Tc = 80°C 100 * IDM Pulsed Drain current 430 VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 9.5 mΩ PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 mJ EAS Single Pulse Avalanche Energy 3000 * Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. May, 2005 Parameter Drain - Source Breakdown Voltage These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM10DDAM09T3 – Rev 0 Symbol VDSS APTM10DDAM09T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz 9 2 Min VGS = 10V VBus = 50V ID =139A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Typ 9875 3940 1470 350 Max 100 500 9.5 4 ±100 Unit Max Unit µA mΩ V nA pF 60 nC 180 35 Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 139A R G = 5Ω Rise Time Typ 70 ns 95 125 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 139A, R G = 5Ω 552 Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 139A, R G = 5Ω 608 µJ 604 µJ 641 X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. VRRM Test Conditions Min IRM Maximum Reverse Leakage Current VR=200V IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 80°C Diode Forward Voltage IF = 100A IF = 200A IF = 100A trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 200 Maximum Peak Repetitive Reverse Voltage Tj = 25°C Tj = 125°C VF Typ IF = 100A VR = 133V di/dt =200A/µs V 250 500 Tj = 125°C 100 1 1.4 0.9 Tj = 25°C 60 Tj = 125°C Tj = 25°C 110 200 Tj = 125°C 840 APT website – http://www.advancedpower.com Unit µA A May, 2005 Symbol Characteristic V ns nC 2–6 APTM10DDAM09T3 – Rev 0 Chopper diode ratings and characteristics APTM10DDAM09T3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Max 0.32 0.55 2500 -40 -40 -40 1.5 RT = Min R 25 °C/W V 150 125 100 4.7 110 Temperature sensor NTC (for more information see application note APT0406 on www.advancedpower.com). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Unit Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T 12 APT website – http://www.advancedpower.com 3–6 APTM10DDAM09T3 – Rev 0 28 17 1 May, 2005 Package outline (dimensions in mm) APTM10DDAM09T3 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 120 VGS=15V, 10V & 9V 500 ID, Drain Current (A) 400 300 8V 200 7V 6V 100 0 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 T J=25°C 20 T J=125°C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 69.5A 1.1 V GS=10V 1 VGS=20V 0.9 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 160 RDS(on) vs Drain Current ID, DC Drain Current (A) 0.8 140 120 100 80 60 40 20 0 0 25 50 75 ID, Drain Current (A) 100 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com May, 2005 RDS(on) Drain to Source ON Resistance T J=-55°C 0 4–6 APTM10DDAM09T3 – Rev 0 ID, Drain Current (A) 600 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 69.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 0.6 limited by RDSon 100 100µs 1ms 10ms 10 Single pulse TJ=150°C 1 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=139A T J=25°C 14 VDS=20V 12 VDS=50V 10 V DS =80V 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) May, 2005 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 APT website – http://www.advancedpower.com 5–6 APTM10DDAM09T3 – Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM10DDAM09T3 APTM10DDAM09T3 Delay Times vs Current Rise and Fall times vs Current 160 120 80 VDS=66V RG=5Ω T J=125°C L=100µH 60 40 td(on) 120 100 80 tr 60 20 0 0 0 50 100 150 200 I D, Drain Current (A) 250 0 50 100 150 200 ID, Drain Current (A) 250 Switching Energy vs Gate Resistance Switching Energy vs Current 2.5 VDS=66V RG=5Ω TJ=125°C L=100µH 1 Switching Energy (mJ) 1.5 Eoff Eon 0.5 0 VDS=66V ID=139A T J=125°C L=100µH 2 1.5 Eoff 1 Eon 0.5 0 100 150 200 250 0 10 I D, Drain Current (A) Operating Frequency vs Drain Current 150 ZVS 100 ZCS Hard switching 50 0 25 50 75 100 125 I D, Drain Current (A) 40 50 60 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) VDS=66V D=50% RG=5Ω T J=125°C T C=75°C 200 30 Gate Resistance (Ohms) 300 250 20 150 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) May, 2005 50 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM10DDAM09T3 – Rev 0 0 Frequency (kHz) tf 40 20 Eon and Eoff (mJ) V DS=66V R G=5Ω T J=125°C L=100µH 140 t d(off) t r and tf (ns) t d(on) and td(off) (ns) 100