APTM50HM75STG Full bridge Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VB US CR3A CR3B Q3 G3 G1 O UT1 O UT2 S1 CR4A CR2A Q2 S3 CR2B CR4B Q4 G2 G4 S2 S4 0/V BUS NTC1 NTC2 G3 G4 S3 S4 VBUS 0/VB US OUT2 OUT1 S1 S2 NTC2 G1 G2 NTC1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 46 34 184 ±30 90 357 46 50 2500 Unit V A November, 2005 CR1B Q1 V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTM50HM75STG – Rev 3 CR1A VDSS = 500V RDSon = 75mΩ typ @ Tj = 25°C ID = 46A @ Tc = 25°C APTM50HM75STG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz IF VF DC Forward Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs Unit Max Unit µA mΩ V nA pF nC 65 Test Conditions VR=200V Typ 5600 1200 90 123 Max 100 500 90 5 ±100 33 18 35 77 755 1241 µJ 846 Typ Max 250 500 Tj = 125°C 30 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 33 Tj = 125°C 150 APT website – http://www.advancedpower.com µJ 726 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns 87 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 46A, R G = 5Ω Maximum Reverse Leakage Current Diode Forward Voltage Min Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 46A, R G = 5Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM 75 VGS = 10V VBus = 250V ID = 46A Series diode ratings and characteristics Typ 3 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 46A R G = 5Ω Rise Time Tf Min T j = 25°C T j = 125°C Unit V µA A 1.15 V November, 2005 IDSS Characteristic ns nC 2–7 APTM50HM75STG – Rev 3 Symbol APTM50HM75STG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IF VF Maximum Reverse Leakage Current VR=600V DC Forward Current IF = 30A IF = 60A IF = 30A Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A VR = 400V di/dt = 200A/µs Min 600 Tj = 25°C Tj = 125°C Tc = 70°C Tj = 125°C Tj = 25°C 85 Tj = 125°C 160 Tj = 25°C 130 Tj = 125°C 700 Symbol Characteristic VISOL TJ TSTG TC Torque Wt Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Diode Junction to Case Thermal Resistance To heatsink M5 Max 250 500 30 1.6 1.9 1.4 Thermal and package characteristics RthJC Typ A V ns nC Max 0.35 1.2 2500 -40 -40 -40 1.5 R 25 Unit °C/W V 150 125 100 4.7 160 Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T November, 2005 RT = Min µA 1.8 Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Unit V APT website – http://www.advancedpower.com 3–7 APTM50HM75STG – Rev 3 IRM Test Conditions APTM50HM75STG SP4 Package outline (dimensions in mm) APT website – http://www.advancedpower.com 4–7 APTM50HM75STG – Rev 3 November, 2005 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APTM50HM75STG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 160 Transfert Characteristics 8V VGS=10&15V 140 I D, Drain Current (A) 7.5V 120 100 7V 80 6.5V 60 40 6V 20 5.5V VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 TJ =25°C 20 TJ =125°C TJ=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 23A 1.15 3 4 5 6 7 8 DC Drain Current vs Case Temperature VGS=10V 1.10 1.05 2 50 I D, DC Drain Current (A) 1.20 1 VGS, Gate to Source Voltage (V) VGS=20V 1.00 0.95 0.90 0.85 0.80 40 30 20 10 0 0 20 40 60 ID, Drain Current (A) 80 100 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com November, 2005 I D, Drain Current (A) 10 120 180 RDS(on) Drain to Source ON Resistance 1 150 5–7 APTM50HM75STG – Rev 3 Thermal Impedance (°C/W) 0.4 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=23A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) 1.0 0.9 0.8 0.7 0.6 limited by RDSon 100µs 10 1ms 10ms 1 Single pulse TJ =150°C 100ms 0.1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 C, Capacitance (pF) limited by R DSon 100 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=46A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 0 20 APT website – http://www.advancedpower.com 40 60 80 100 120 140 160 Gate Charge (nC) November, 2005 VGS (TH), Threshold Voltage (Normalized) 1.2 6–7 APTM50HM75STG – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50HM75STG APTM50HM75STG Delay Times vs Current Rise and Fall times vs Current 120 td(off) 80 VDS=333V RG=5Ω TJ=125°C L=100µH 60 40 td(on) 20 80 60 40 tr 0 10 20 30 40 50 60 I D, Drain Current (A) 10 70 VDS=333V RG=5Ω TJ=125°C L=100µH 2 1.5 40 50 60 70 Switching Energy vs Gate Resistance Eon Eoff 1 30 4 Switching Energy (mJ) 2.5 20 I D, Drain Current (A) Switching Energy vs Current 0.5 VDS=333V ID=46A T J=125°C L=100µH 3.5 3 2.5 Eoff 2 Eon 1.5 1 Eoff 0.5 0 0 30 40 50 60 0 70 10 ID, Drain Current (A) Operating Frequency vs Drain Current 300 ZCS 250 IDR, Reverse Drain Current (A) V DS=333V D=50% R G=5Ω T J=125°C T C=75°C ZVS 200 150 100 hard switching 50 0 10 15 20 25 30 ID, Drain Current (A) 30 40 50 Gate Resistance (Ohms) 400 350 20 35 40 1000 100 Source to Drain Diode Forward Voltage TJ =150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) November, 2005 20 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7 APTM50HM75STG – Rev 3 10 Frequency (kHz) tf 20 0 Switching Energy (mJ) VDS=333V RG=5Ω T J=125°C L=100µH 100 t r and tf (ns) t d(on) and td(off) (ns) 100