ADPOW APTM50DUM25T

APTM50DUM25T
VDSS = 500V
RDSon = 25mΩ
Ω max @ Tj = 25°C
ID = 149A @ Tc = 25°C
Dual common source
MOSFET Power Module
Application
•
•
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AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
•
•
•
•
S
D2
•
•
Benefits
•
•
•
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Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals for signal and M5 for power for
easy PCB mounting
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
500
149
111
300
±30
25
1250
149
30
1300
Unit
V
A
V
mΩ
W
A
June, 2003
D1
DK1
NC
G1
SK1
NC
SK2
G2
NC
DK2
NC
NTC1
NTC2
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTM50DUM25T – Rev 0
1
Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Kelvin Drain for VDS monitoring
Very low stray inductance
- Symmetrical design
- M5 power connectors
Internal thermistor for temperature monitoring
High level of integration
APTM50DUM25T
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
All ratings @ Tj = 25°C unless otherwise specified
Test Conditions
VGS = 0V, ID = 500µA
VGS = 0V,VDS = 500V
VGS = 0V,VDS = 400V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 149A
Td(on)
Turn-on Delay Time
Td(off)
Tf
2
Min
Turn-off Delay Time
Fall Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Mounting torque
Wt
Package Weight
Max
Unit
nF
nC
12
10
ns
50
8
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = -149A
IS = -149A, VR = 250V
diS/dt = 800A/µs
IS = -149A, VR = 250V
diS/dt = 800A/µs
Thermal and package characteristics
Torque
mΩ
V
nA
µA
560
Test Conditions
Symbol Characteristic
RthJC
Junction to Case
RMS Isolation Voltage, any terminal to case
VISOL
t =1 min, I isol<1mA, 50/60Hz
TJ
Operating junction temperature range
TSTG
Storage Temperature Range
TC
Operating Case Temperature
Unit
V
300
2000
25
4
±250
200
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
Typ
29.6
4
1.6
Max
1200
Resistive Switching
VGS = 15V
VBus = 250V
ID = 149A
RG = 0.22 Ω
Rise Time
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 74.5A
VGS = VDS, ID = 8mA
VGS = ±30 V, VDS = 0V
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Tr
Min
500
Min
Max
149
111
1.3
To heatsink
For terminals
M5
M5
APT website – http://www.advancedpower.com
A
V
510
ns
80
µC
Typ
Max
0.1
2500
-40
-40
-40
2
2
Unit
Unit
°C/W
V
150
125
100
3.5
3.5
550
°C
June, 2003
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
N.m
g
2-3
APTM50DUM25T – Rev 0
Electrical Characteristics
APTM50DUM25T
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT =
Min
R 25
exp B 25 / 85
1
1
−
T25 T
Typ
68
4080
Max
Unit
kΩ
K
T: Thermistor temperature
RT: Thermistor value at T
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTM50DUM25T – Rev 0
June, 2003
Ra 3,2
Package outline