APTM50DUM25T VDSS = 500V RDSon = 25mΩ Ω max @ Tj = 25°C ID = 149A @ Tc = 25°C Dual common source MOSFET Power Module Application • • • AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features • • • • S D2 • • Benefits • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals for signal and M5 for power for easy PCB mounting Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C Max ratings 500 149 111 300 ±30 25 1250 149 30 1300 Unit V A V mΩ W A June, 2003 D1 DK1 NC G1 SK1 NC SK2 G2 NC DK2 NC NTC1 NTC2 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTM50DUM25T – Rev 0 1 Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Kelvin Drain for VDS monitoring Very low stray inductance - Symmetrical design - M5 power connectors Internal thermistor for temperature monitoring High level of integration APTM50DUM25T IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss All ratings @ Tj = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 500µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 149A Td(on) Turn-on Delay Time Td(off) Tf 2 Min Turn-off Delay Time Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge Mounting torque Wt Package Weight Max Unit nF nC 12 10 ns 50 8 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = -149A IS = -149A, VR = 250V diS/dt = 800A/µs IS = -149A, VR = 250V diS/dt = 800A/µs Thermal and package characteristics Torque mΩ V nA µA 560 Test Conditions Symbol Characteristic RthJC Junction to Case RMS Isolation Voltage, any terminal to case VISOL t =1 min, I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature Unit V 300 2000 25 4 ±250 200 Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage Typ 29.6 4 1.6 Max 1200 Resistive Switching VGS = 15V VBus = 250V ID = 149A RG = 0.22 Ω Rise Time Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 74.5A VGS = VDS, ID = 8mA VGS = ±30 V, VDS = 0V Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Tr Min 500 Min Max 149 111 1.3 To heatsink For terminals M5 M5 APT website – http://www.advancedpower.com A V 510 ns 80 µC Typ Max 0.1 2500 -40 -40 -40 2 2 Unit Unit °C/W V 150 125 100 3.5 3.5 550 °C June, 2003 Symbol Characteristic BVDSS Drain - Source Breakdown Voltage N.m g 2-3 APTM50DUM25T – Rev 0 Electrical Characteristics APTM50DUM25T Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = Min R 25 exp B 25 / 85 1 1 − T25 T Typ 68 4080 Max Unit kΩ K T: Thermistor temperature RT: Thermistor value at T APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTM50DUM25T – Rev 0 June, 2003 Ra 3,2 Package outline