APTM50TDUM65P Triple dual common source MOSFET Power Module D5 G3 G1 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D3 D2 S1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration D6 G1 S1/S2 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D5 G3 S3/S4 S3 G5 S5/S6 S5 S2 S4 S6 G2 G4 G6 D4 D6 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 51 38 204 ±30 65 390 51 50 3000 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50TDUM65P – Rev 0 September, 2004 D3 D1 VDSS = 500V RDSon = 65mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C APTM50TDUM65P All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V, ID = 250µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min 500 Tj = 25°C Tj = 125°C VGS = 10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Min VGS = 10V VBus = 250V ID = 51A VSD dv/dt trr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Z Reverse Recovery Time Qrr Reverse Recovery Charge Typ 7000 1400 90 140 Unit V 250 1000 65 5 ±100 mΩ V nA Max Unit µA pF nC 70 21 38 93 1035 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 51A, R G = 3Ω 1556 Test Conditions ns 75 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 51A, R G = 3Ω µJ 845 µJ 1013 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 51A IS = - 51A VR = 250V diS/dt = 100A/µs Max 40 Source - Drain diode ratings and characteristics Symbol IS 3 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 51A R G = 3Ω Rise Time Typ Max 51 38 1.3 8 Unit A Tj = 25°C 700 V V/ns ns Tj = 25°C 15.4 µC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 51A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2–6 APTM50TDUM65P – Rev 0 September, 2004 Symbol BVDSS APTM50TDUM65P Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Min IGBT RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 2500 -40 -40 -40 3 Typ Max 0.32 150 125 100 5 250 Unit °C/W V °C N.m g Package outline APT website – http://www.advancedpower.com 3–6 APTM50TDUM65P – Rev 0 September, 2004 5 places (3:1) APTM50TDUM65P Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) VGS =10&15V 160 7V 120 6.5V 80 6V 40 5.5V 0 0 5V 5 10 15 20 VDS, Drain to Source Voltage (V) 100 75 TJ =25°C 50 25 TJ =125°C 0 25 TJ=-55°C 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.1 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 125 0 60 Normalized to VGS =10V @ 25.5A 1.05 ID, DC Drain Current (A) VGS=10V 1 VGS =20V 0.95 0.9 50 40 30 20 10 0 0 10 20 30 40 50 ID, Drain Current (A) 60 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4–6 APTM50TDUM65P – Rev 0 September, 2004 ID, Drain Current (A) 8V RDS(on) Drain to Source ON Resistance Transfert Characteristics 150 200 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100 us limited by RDSon 100 1 ms 10 10 ms 1 Single pulse TJ =150°C 100 ms 0.1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID= 25.5A 14 VDS=100V ID=51A TJ=25°C 12 VDS=250V 10 VDS=400V 8 6 4 2 0 0 25 APT website – http://www.advancedpower.com 50 75 100 125 150 175 Gate Charge (nC) 5–6 APTM50TDUM65P – Rev 0 September, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50TDUM65P APTM50TDUM65P Rise and Fall times vs Current 160 70 140 td(off) V DS=333V RG =3Ω T J=125°C L=100µH 60 50 40 30 td(on) 100 80 tr 60 20 0 10 10 20 30 40 50 60 I D, Drain Current (A) 70 80 10 20 30 40 50 60 ID, Drain Current (A) 70 80 Switching Energy vs Gate Resistance Switching Energy vs Current 5 VDS=333V RG=3Ω TJ=125°C L=100µH 2.5 2 Switching Energy (mJ) 3 Eon 1.5 Eoff 1 0.5 VDS=333V ID=51A TJ=125°C L=100µH 4 3 Eoff Eon 2 1 0 0 10 20 30 40 50 60 I D, Drain Current (A) 70 0 80 Operating Frequency vs Drain Current ZVS 300 250 I DR, Reverse Drain Current (A) 350 VDS=333V D=50% RG=3Ω TJ=125°C TC=75°C 200 ZCS 150 100 hard switching 50 0 10 15 20 25 30 35 I D, Drain Current (A) 10 15 20 25 30 35 40 45 Gate Resistance (Ohms) 450 400 5 40 45 Source to Drain Diode Forward Voltage 1000 100 TJ =150°C TJ =25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50TDUM65P – Rev 0 September, 2004 Switching Energy (mJ) tf 40 20 Frequency (kHz) VDS=333V RG=3Ω T J=125°C L=100µH 120 t r and tf (ns) td(on) and t d(off) (ns) Delay Times vs Current 80