ADPOW APTM120DU15

APTM120DU15
Dual common source
MOSFET Power Module
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Q1
Q2
G1
G2
S1
S2
S
G1
D1
S
D2
S1
S2
G2
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1200
60
45
240
±30
150
1250
22
50
3000
Unit
V
A
V
mΩ
W
A
mJ
July, 2004
D2
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120DU15– Rev 0
D1
VDSS = 1200V
RDSon = 150mΩ max @ Tj = 25°C
ID = 60A @ Tc = 25°C
APTM120DU15
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V, ID = 1mA
Min
1200
VGS = 0V,VDS = 1200V
T j = 25°C
VGS = 0V,VDS = 1000V
T j = 125°C
VGS = 10V, ID = 30A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Min
VGS = 10V
VBus = 600V
ID = 60A
Qrr
Reverse Recovery Charge
Typ
20.6
3.08
0.52
748
Max
Unit
V
400
2000
150
5
±250
mΩ
V
nA
Max
Unit
µA
nF
nC
96
480
20
15
45
3.96
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 60A, R G = 1.2Ω
6.26
Test Conditions
mJ
2.74
mJ
3.43
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 60A
IS = - 60A, VR = 600V
diS/dt = 400A/µs
ns
160
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 60A, R G = 1.2Ω
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery Z
trr
Reverse Recovery Time
3
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 60A
R G = 1.2Ω
Rise Time
Typ
Max
60
45
1.3
10
Unit
A
1291
V
V/ns
ns
116
µC
APT website – http://www.advancedpower.com
July, 2004
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 60A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
2–6
APTM120DU15– Rev 0
Symbol
BVDSS
APTM120DU15
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Torque
Mounting torque
2500
-40
-40
-40
3
2
Wt
Package Weight
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
For terminals
M6
M5
Typ
Max
0.1
150
125
100
5
3.5
280
Unit
°C/W
V
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM120DU15– Rev 0
July, 2004
Package outline
APTM120DU15
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
320
200
160
7V
6.5V
120
80
6V
40
5.5V
5
10
15
20
25
240
200
160
120
TJ=25°C
80
40
5V
0
0
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
280
ID, Drain Current (A)
TJ=125°C
30
0
ID, DC Drain Current (A)
4
5
6
7
8
9
VGS=20V
0.9
0.8
60
50
40
30
20
10
0
0
40
80
120
ID, Drain Current (A)
160
25
50
75
100
125
150
TC, Case Temperature (°C)
July, 2004
RDS(on) Drain to Source ON Resistance
VGS=10V
1.1
1
3
70
Normalized to
VGS =10V @ 30A
1.2
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
1.4
TJ=-55°C
0
APT website – http://www.advancedpower.com
4–6
APTM120DU15– Rev 0
I D, Drain Current (A)
VGS =15, 10 & 8V
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=30A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
limited by RDS on
100
1ms
10ms
10
Single pulse
TJ =150°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
I D=60A
TJ=25°C
12
10
V DS=240V
VDS=600V
8
V DS =960V
6
4
2
0
0
160
320
480
640
800
960
Gate Charge (nC)
July, 2004
0
1200
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5–6
APTM120DU15– Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM120DU15
APTM120DU15
Delay Times vs Current
t d(off)
VDS=800V
RG=1.2Ω
T J=125°C
L=100µH
150
60
120
tr and tf (ns)
td(on) and td(off) (ns)
Rise and Fall times vs Current
80
180
V DS=800V
RG=1.2Ω
T J=125°C
L=100µH
90
60
40
tr
20
t d(on)
30
0
0
20
40
60
80
100
120
140
20
40
I D, Drain Current (A)
140
14
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
10
8
Eon
Switching Energy (mJ)
Switching Energy (mJ)
60
80
100
120
I D, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
12
Eoff
6
4
2
0
20
40
60
80
100
120
12
10
V DS=800V
ID=60A
T J=125°C
L=100µH
Eoff
8
Eon
6
4
2
0.00 1.25 2.50 3.75 5.00 6.25 7.50 8.75
140
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
250
200
Frequency (kHz)
tf
150
ZCS
V DS=800V
D=50%
R G=1.2Ω
T J=125°C
T C=75°C
100
50
ZVS
Hard
switching
0
15
25
35
45
ID, Drain Current (A)
55
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM120DU15– Rev 0
July, 2004
5
100