ADPOW APTM50UM25S

APTM50UM25S
Single switch
Series & parallel diodes
MOSFET Power Module
SK
VDSS = 500V
RDSon = 25mΩ max @ Tj = 25°C
ID = 149A @ Tc = 25°C
Application
CR1
D
•
•
•
S
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Q1
Features
G
•
•
•
•
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Low stray inductance
- M6 power connectors
- M4 signal connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
149
110
550
±30
25
1250
41
50
1600
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM50UM25S – Rev 1 June, 2004
•
•
•
APTM50UM25S
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Test Conditions
VGS = 0V, ID = 500µA
Min
500
VGS = 0V,VDS= 500V
Tj = 25°C
VGS = 0V,VDS= 400V
Tj = 125°C
VGS = 10V, ID = 74.5A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 250V
ID = 149A
Turn-off Delay Time
Fall Time
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 120A
IF = 240A
IF = 120A
IF = 120A
VR = 133V
di/dt = 400A/µs
IF = 120A
VR = 133V
di/dt = 400A/µs
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 100A
IF = 200A
IF = 100A
IF = 100A
VR = 400V
di/dt = 200A/µs
IF = 100A
VR = 400V
di/dt = 200A/µs
Unit
V
400
1000
25
5
±200
mΩ
V
nA
Max
Unit
µA
nF
nC
196
15
21
52
Min
Tj = 125°C
Typ
120
1.1
1.4
0.9
Tj = 25°C
31
Tj = 125°C
60
Tj = 25°C
120
Tj = 125°C
500
Min
Tj = 125°C
Typ
100
1.6
1.9
1.4
Tj = 25°C
180
Tj = 125°C
220
Tj = 25°C
390
Tj = 125°C
1450
Tc = 80°C
APT website – http://www.advancedpower.com
ns
73
Tc = 85°C
Parallel diode ratings and characteristics
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
Typ
17.5
3.6
0.24
364
Max
96
Series diode ratings and characteristics
VF
3
Inductive Switching @ 125°C
VGS = 15V
VBus = 333V
ID = 149A
R G = 1.2Ω
Rise Time
Typ
Max
Unit
A
1.15
V
ns
nC
Max
Unit
A
1.8
V
ns
nC
2–6
APTM50UM25S – Rev 1 June, 2004
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
APTM50UM25S
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Series diode
Parallel diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
M4
M6
2500
-40
-40
-40
3
Typ
Max
0.1
0.46
0.6
Unit
°C/W
V
150
125
100
1.2
5
400
°C
N.m
g
Mounting holes: 4x∅6.5 mm
APT website – http://www.advancedpower.com
3–6
APTM50UM25S – Rev 1 June, 2004
Package outline
APTM50UM25S
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.1
0.02
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
7.5V
8V
VGS =10&15V
400
7V
320
240
6.5V
160
6V
80
5.5V
VDS > ID(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
400
320
240
160
TJ =25°C
80
TJ =125°C
TJ=-55°C
0
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
RDS(on) vs Drain Current
1.20
Normalized to
VGS=10V @ 74.5A
1.15
2
3
4
5
6
7
8
DC Drain Current vs Case Temperature
160
VGS=10V
1.10
VGS=20V
1.05
1
VGS, Gate to Source Voltage (V)
I D, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
10
480
I D, Drain Current (A)
I D, Drain Current (A)
480
1
1.00
0.95
0.90
120
80
40
0
0
80
160
240
ID, Drain Current (A)
320
25
50
75
100
125
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
150
4–6
APTM50UM25S – Rev 1 June, 2004
Thermal Impedance (°C/W)
0.12
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25 50
75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=74.5A
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.1
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
1.2
1.0
0.9
0.8
0.7
0.6
100
limited by RDSon
1ms
10
10ms
Single pulse
TJ =150°C
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
VGS , Gate to Source Voltage (V)
100000
Ciss
C, Capacitance (pF)
100µs
limited by RDSon
10000
Coss
1000
Crss
100
10
0
10
20
30
40
VDS, Drain to Source Voltage (V)
50
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
V DS =100V
I D=149A
12 T =25°C
J
V =250V
DS
10
VDS=400V
8
6
4
2
0
0
80
APT website – http://www.advancedpower.com
160 240 320 400 480 560
Gate Charge (nC)
5–6
APTM50UM25S – Rev 1 June, 2004
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50UM25S
APTM50UM25S
Delay Times vs Current
Rise and Fall times vs Current
100
td(off)
60
V DS =333V
RG =1.2Ω
T J=125°C
L=100µH
40
td(on)
20
tf
40
tr
0
40
80
120 160 200 240
ID, Drain Current (A)
280
40
VDS=333V
RG=1.2Ω
TJ=125°C
L=100µH
6
4.8
160
200
240
280
Switching Energy vs Gate Resistance
Eon
3.6
120
10
Switching Energy (mJ)
7.2
80
ID, Drain Current (A)
Switching Energy vs Current
Eoff
2.4
1.2
V DS =333V
ID=149A
T J=125°C
L=100µH
8
Eoff
6
Eon
4
2
0
40
80
120
160
200
0
240
I D, Drain Current (A)
Operating Frequency vs Drain Current
IDR, Reverse Drain Current (A)
VDS=333V
D=50%
RG=1.2Ω
TJ=125°C
350
300
250
200
150
100
50
0
20
40
60
80
100
ID, Drain Current (A)
5
7.5
10
12.5
Gate Resistance (Ohms)
450
400
2.5
120
140
1000
Source to Drain Diode Forward Voltage
TJ =150°C
100
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM50UM25S – Rev 1 June, 2004
Switching Energy (mJ)
60
20
0
Frequency (kHz)
VDS=333V
RG=1.2Ω
TJ=125°C
L=100µH
80
t r and tf (ns)
t d(on) and td(off) (ns)
80