APM2103SG Dual P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-2.5A RDS(ON)= 88mΩ(typ.) @ VGS= -4.5V RDS(ON)= 120mΩ (typ.) @ VGS= -2.5V RDS(ON)= 160mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design Reliable and Rugged P Channel MOSFET (5.6)D2 (7.8)D1 Applications • Power Management in Notebook Computer, (4)G2 (2)G1 Portable Equipment and Battery Powered Systems. (1)S1 (3)S2 P Channel MOSFET Ordering and Marking Information Package Code SG : JSC70-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2103 Lead Free Code Handling Code Temp. Range Package Code APM2103 : XXXXX - Date Code M2103 Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw APM2103SG Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 ID * IDM IS Continuous Drain Current * TJ TSTG PD * RθJA b A Diode Continuous Forward Current -1.3 A Maximum Junction Temperature 150 -10 Storage Temperature Range °C -55 to 150 Maximum Power Dissipation * V -2.5 VGS=-4.5V 300µs Pulsed Drain Current * Unit TA =25°C 1.14 TA =100°C 0.45 Thermal Resistance-Junction to Ambient W °C/W 110 Notes: *Surface Mounted on 1in pad area, t ≤ 5sec. 2 Electrical Characteristics Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Condition APM2103SG Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS VGS=0V, IDS=250µA RDS(ON) VSD a V VDS=-16V, VGS=0V -1 T J=85°C Gate Threshold Voltage VDS= VGS, IDS=-250µA Gate Leakage Current VGS=±10V, VDS=0V VGS=-4.5V, IDS=-2.5A a -20 -30 -0.5 -0.7 -1 V ±10 µA 88 110 Drain-Source On-State Resistance VGS=-2.5V, IDS=-2A 120 160 VGS=-1.8V, IDS=-1A 160 260 ISD=-1.3A, VGS=0V -0.8 -1.3 5.8 8 Diode Forward Voltage Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge µA mΩ V b Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 VDS=-10V, VGS=-4.5V, IDS=-2.5A 2 1.3 1.1 nC www.anpec.com.tw APM2103SG Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics (TA = 25°C unless otherwise noted) Test Condition APM2103SG Min. Typ. Max. Unit b Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V, VDS=-10V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=1A, VGEN=-4.5V, RG=6Ω ISD=-2.5A dlSD/dt =100A/µs 360 pF 80 50 8 15 22 41 29 53 32 59 ns 14 ns 6 nc Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 3 www.anpec.com.tw APM2103SG Typical Characteristics Drain Current Power Dissipation 3.0 1.3 1.2 1.1 2.5 ID - Drain Current (A) 1.0 Ptot - Power (W) 0.9 0.8 0.7 0.6 0.5 0.4 2.0 1.5 1.0 0.3 0.5 0.2 0.1 0.0 o o TA=25 C 0 20 40 60 0.0 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 2 Normalized Effective Transient 50 Rd s(o n) Lim it 10 ID - Drain Current (A) TA=25 C,VG=-4.5V 300µs 1ms 1 10ms 100ms 0.1 1s DC 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 TA=25 C 0.01 0.01 2 Mounted on 1in pad o RθJA : 110 C/W Single Pulse o 0.1 1 10 0.01 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2103SG Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 240 10 VGS= -3,-4, -5, -6, -7, -8, -9, -10V 220 V = -1.8V GS 8 200 RDS(ON) - On - Resistance (mΩ) 9 ID - Drain Current (A) -2.5V 7 6 -2V 5 4 3 -1.5V 2 1 0.5 1.0 1.5 2.0 2.5 VGS= -2.5V 140 120 VGS= -4.5V 100 80 60 20 3.0 0 2 4 6 8 -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 10 1.8 180 ID= -2.5A IDS =-250µA 1.6 Normalized Threshold Voltage 160 RDS(ON) - On - Resistance (mΩ) 160 40 0 0.0 140 120 100 80 60 40 180 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1 2 3 4 5 6 7 8 9 0.0 -50 -25 10 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM2103SG Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 1.8 10 VGS = -4.5V IDS = -2.5A 1.4 -IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 0.6 o Tj=150 C o Tj=25 C 1 0.4 o RON@Tj=25 C: 88mΩ 0.2 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.9 1.2 1.5 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.8 5.0 Frequency=1MHz VDS= -10V 4.5 -VGS - Gate - Source Voltage (V) 450 400 C - Capacitance (nC) 0.6 Tj - Junction Temperature (°C) 500 Ciss 350 300 250 200 150 Coss 100 50 Crss 0 0.3 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 4 8 12 16 20 0 1 2 3 4 5 6 7 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 IDS= -2.5A 6 www.anpec.com.tw APM2103SG Packaging Information A1 b 0 L E E2 E1 e c A A2 D 01 Dim Millimeters Inches Min. Max. Min. Max. A - 1.10 - 0.043 A1 0.00 0.10 0.000 0.004 A2 0.70 1.00 0.028 0.039 b 0.15 0.30 0.006 0.012 c 0.10 0.20 0.004 0.008 D 1.80 2.20 0.071 0.087 E 1.80 2.40 0.071 0.094 E1 1.65 1.85 0.065 0.073 E2 2.00 2.40 0.079 0.094 e 0.50 BSC 0.020 BSC L 0.35 0.55 0.014 0.022 θ 0 8° 0 8° θ1 4° 10° 4° 10° Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 7 www.anpec.com.tw APM2103SG Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 8 www.anpec.com.tw