KBM2302CA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/3.6 A , RDS(ON)=45mΩ (typ.) @ VGS=10V RDS(ON)=65mΩ (typ.) @ VGS=4.5V RDS(ON)=80mΩ (typ.) @ VGS=2.5V RDS(ON)=95mΩ (typ.) @ VGS=1.8V • • • Top View of SOT-23 Super High Dense Cell Design Reliable and Rugged D Lead Free Available (RoHS Compliant) Applications • G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S N-Channel MOSFET Ordering and Marking Information Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device KBM2302C Lead Free Code Handling Code Temp. Range Package Code KBM2302C A : 026X X - Date Code Cover Tape Dimensions Application Devices Per Reel SOT23-3 3000 1 KBM2302CA Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 ID* Continuous Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Unit V 3.6 VGS=10V A 11 A 1 150 °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient W 150 °C/W Notes: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter Static Characteristics BV DSS Drain-Source Breakdown Voltage IDSS V GS(th) IGSS Zero Gate Voltage Drain Current Test Condition V GS=0V, IDS=250µA Gate Leakage Current V GS=±10V, V DS=0V Gate-Source Charge Q gd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2007 Typ. Max. 20 V 1 30 µA 1 V V GS=10V, IDS=6A ±10 60 µA 45 V GS=4.5V, IDS=3A 65 80 V GS=2.5V, IDS=2A 80 95 V GS=1.8V, IDS=1A 95 150 ISD=1A, V GS=0V 0.7 1.3 6 8 V DS=10V, V GS=4.5V, IDS=3.6A 0.5 Unit 0.75 Gate Charge Characteristics b Qg Total Gate Charge Q gs Min. T J=85°C V DS=V GS, IDS=250µA Diode Forward Voltage KBM2302CA V DS=16V, V GS=0V Gate Threshold Voltage R DS(ON) a Drain-Source On-state Resistance V SDa (TA = 25°C unless otherwise noted) 0.7 mΩ V nC 3 2 www.anpec.com.tw KBM2302CA Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition KBM2300CA Min. Typ. Max. Unit b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=10V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω ISD=6A, dlSD/dt=100A/µs Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. 3 Ω 6 586 pF 101 90 5 10 15 28 26 48 15 28 ns 21 ns 8 nC KBM2302CA Typical Characteristics Power Dissipation Drain Current 1.0 3.6 0.9 3.0 -ID - Drain Current (A) 0.8 Ptot - Power (W) 0.7 0.6 0.5 0.4 0.3 2.5 2.0 1.5 1.0 0.2 0.5 0.1 o o 0.0 TA=25 C 0 20 40 0.0 60 80 100 120 140 160 TA=25 C,VG=4.5V 0 Tj - Junction Temperature (°C) Normalized Transient Thermal Resistance Rd s(o n) Lim it ID - Drain Current (A) 1ms 1 10ms 100ms 0.1 1s DC o TA=25 C 0.1 1 60 80 100 120 140 160 Thermal Transient Impedance 100 0.01 40 Tj - Junction Temperature (°C) Safe Operation Area 10 20 10 2 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 100 VDS - Drain - Source Voltage (V) Mounted on 1in pad o RθJA : 150 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 KBM2302CA Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.0 20 VGS = 10V IDS = 6A 10 1.6 1.4 IS - Source Current (A) Normalized On Resistance 1.8 1.2 1.0 0.8 0.6 0.4 o Tj=150 C o Tj=25 C 1 0.2 o RON@Tj=25 C: 25mΩ 0.0 -50 -25 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 800 10 Frequency=1MHz VGS - Gate - source Voltage (V) 700 C - Capacitance (pF) 600 500 Ciss 400 300 200 Coss Crss 100 0 VDS =10V 9 0 4 8 12 16 7 6 5 4 3 2 1 0 20 IDS = 6A 8 0 2 4 6 8 10 12 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) 5 14 KBM2302CA Packaging Information SOT23-3 D e E E1 SEE VIEW A c b 0.25 A L GAUGE PLANE SEATING PLANE 0 A1 A2 e1 VIEW A S Y M B O L SOT23-3 INCHES MILLIMETERS MIN. MIN. MAX. MAX. A 1.45 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.30 0.50 0.012 0.020 c 0.08 0.22 0.003 0.009 D 0.057 2.90 BSC 0.114 BSC E 2.80 BSC 0.110 BSC E1 1.60 BSC 0.063 BSC e 0.95 BSC 0.037 BSC e1 1.90 BSC 0.075 BSC L 0.30 0.60 0 0° 8° 0.012 0° 6 0.024 8°